High Efficiency Multijunction Solar Cells with Finely-Tuned Quantum Wells

Author(s):  
Argyrios C. Varonides
2014 ◽  
Vol 1 (3-4) ◽  
Author(s):  
Nikhil Jain ◽  
Mantu K. Hudait

AbstractAchieving high-efficiency solar cells and at the same time driving down the cell cost has been among the key objectives for photovoltaic researchers to attain a lower levelized cost of energy (LCOE). While the performance of silicon (Si) based solar cells have almost saturated at an efficiency of ~25%, III–V compound semiconductor based solar cells have steadily shown performance improvement at ~1% (absolute) increase per year, with a recent record efficiency of 44.7%. Integration of such high-efficiency III–V multijunction solar cells on significantly cheaper and large area Si substrate has recently attracted immense interest to address the future LCOE roadmaps by unifying the high-efficiency merits of III–V materials with low-cost and abundance of Si. This review article will discuss the current progress in the development of III–V multijunction solar cell integration onto Si substrate. The current state-of-the-art for III–V-on-Si solar cells along with their theoretical performance projections is presented. Next, the key design criteria and the technical challenges associated with the integration of III–V multijunction solar cells on Si are reviewed. Different technological routes for integrating III–V solar cells on Si substrate through heteroepitaxial integration and via mechanical stacking approach are presented. The key merits and technical challenges for all of the till-date available technologies are summarized. Finally, the prospects, opportunities and future outlook toward further advancing the performance of III–V-on-Si multijunction solar cells are discussed. With the plummeting price of Si solar cells accompanied with the tremendous headroom available for improving the III–V solar cell efficiencies, the future prospects for successful integration of III–V solar cell technology onto Si substrate look very promising to unlock an era of next generation of high-efficiency and low-cost photovoltaics.


2013 ◽  
Vol 22 (7) ◽  
pp. 784-795 ◽  
Author(s):  
Hiromasa Fujii ◽  
Kasidit Toprasertpong ◽  
Yunpeng Wang ◽  
Kentaroh Watanabe ◽  
Masakazu Sugiyama ◽  
...  

Author(s):  
Victor Orejuela ◽  
Ivan Garcia ◽  
Clara Sanchez ◽  
Manuel Hinojosa ◽  
Shabnam Dadgostar ◽  
...  

Author(s):  
M. Rizwan

Solar cells convert sunlight into electricity directly. It is a reliable, non-toxic and pollution free source of electricity. Since 19th century researchers have been trying to investigate different materials for solar cell devices. Commercially, Si based solar are predominate in this field, however, with passage of time different materials have been reported. Solar cell techniques are based on three different generations. 1st generation is based on Si and 2nd generation includes thin-films of CuInGaSe, GaAs, CdTe and GaInP etc. whereas 3rd generation is based on organic, hybrid perovskites, quantum dot (QD)-sensitizers & dye-sensitizers solar cells. Among all these, the 3rd generation solar cells are the most efficient and more cost effective than 1nd and 2nd generation solar cells. The 2nd generation is less costly but also less efficient compared to 1st generation. 3rd generation faces degradation of the photovoltaic materials which is a major problem. In this chapter different reported materials since 19th century for solar cells are mentioned. The past and present scenarios of solar cells are discussed comprehensively. It is observed that Si-based and multijunction solar cells dominate the market. Although, theoretically it is reported that hybrid perovskites and quantum dot materials for solar cell are the most efficient materials for photovoltaic PV devices. In spite of the high efficiency the stability of organic, hybrid perovskites, QD-sensitizers &dye-sensitizer materials is a big challenge.


2014 ◽  
Vol 49 (8) ◽  
pp. NA-NA
Author(s):  
G. Timò ◽  
G. Abagnale ◽  
N. Armani ◽  
E. Malvisi ◽  
G. Carbi ◽  
...  

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