Fast Switching Behavior in Nonlinear Electronic Circuits: A Geometric Approach

2013 ◽  
pp. 99-116 ◽  
Author(s):  
Tina Thiessen ◽  
Sören Plönnigs ◽  
Wolfgang Mathis
Keyword(s):  
Geometric Approach ◽  
Switching Behavior ◽  
Electronic Circuits ◽  
Fast Switching

FE-simulation of fast switching behavior of granular nanoelements

2002 ◽  
Vol 38 (5) ◽  
pp. 2520-2522 ◽  
Author(s):  
J. Fidler ◽  
T. Schrefl ◽  
V.D. Tsiantos ◽  
H. Forster ◽  
R. Dittrich ◽  
...  
Keyword(s):  
Fe Simulation ◽  
Switching Behavior ◽  
Fast Switching

Evaluation of electrochromic fast-switching behavior of self-doped conducting polymer

1991 ◽  
Vol 40 (3) ◽  
pp. 333-340 ◽  
Author(s):  
Y. Ikenoue ◽  
H. Tomozawa ◽  
Y. Saida ◽  
M. Kira ◽  
H. Yashima
Keyword(s):  
Conducting Polymer ◽  
Switching Behavior ◽  
Fast Switching

3300V-Class 4H SiC Implantation-Epitaxial Mosfets with Low Specific On-Resistance of 11.6mΩcm2 and High Avalanche Withstanding Capability

2016 ◽  
Vol 858 ◽  
pp. 962-965 ◽  
Author(s):  
Takashi Tsuji ◽  
Hiromu Shiomi ◽  
Naoyuki Ohse ◽  
Yasuhiko Onishi ◽  
Kenji Fukuda
Keyword(s):  
High Temperatures ◽  
Threshold Voltage ◽  
Switching Behavior ◽  
Device Design ◽  
Drastic Reduction ◽  
Current Spreading ◽  
Fast Switching ◽  
Edge Termination ◽  
Blocking Voltage

In this paper, newly developed 3300V-class IEMOSFETs were presented. By means of the optimization of current spreading layers (CSLs), we could achieve low specific on-resistance (RONA) of 11.6mΩcm2, while maintaining high blocking voltage (BVDSS) of 3978V. The RONA analysis revealed drastic reduction of JFET resistance compared to a MOSFET without a CSL. High ruggedness with the avalanche withstanding energy of 4.6J/cm2 was achieved by the optimal device design of the edge termination. We could also confirm favorable characteristics of RONA, BVDSS and threshold voltage (VTH) at high temperatures up to 200○C, and the fast switching behavior.

Fe-simulation of fast switching behavior of granular nanoelements

2003 ◽  
Author(s):  
J. Fidler ◽  
T. Schrefl ◽  
V.D. Tsiantos ◽  
H. Forster ◽  
D. Suess ◽  
...  
Keyword(s):  
Fe Simulation ◽  
Switching Behavior ◽  
Fast Switching
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