Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention

2008 ◽  
Vol 23 (7) ◽  
pp. 075019 ◽  
Author(s):  
N Xu ◽  
L F Liu ◽  
X Sun ◽  
C Chen ◽  
Y Wang ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Switching Behavior ◽  
Fast Switching ◽  
Bipolar Switching

scholarly journals The Resistive Switching Behavior of Al/Chitosan-Graphene Oxide/FTO Structure

2021 ◽  
Vol 2021 ◽  
pp. 1-7
Author(s):  
Hau Huu Do Ho ◽  
Trung Minh Le ◽  
Ngoc Kim Pham
Keyword(s):  
Graphene Oxide ◽  
Electric Fields ◽  
Nonvolatile Memory ◽  
Conduction Mechanism ◽  
Random Access ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Bipolar Switching ◽  
Metal Insulator Metal

Resistive random access memory (RRAM) is emerging as a new class of nonvolatile memory that offers promising electronic properties and simple metal-insulator-metal (MIM) structures for sandwich layers, such as organics, inorganics, and hybrid materials. Hybrid structures have attracted much interest recently because of their advantageous properties. The combination of chitosan (CS) and graphene oxide (GO) acts as switching layers in the Al/CS-GO/FTO RRAM structure it is studied with bipolar switching behavior at approximately 102 ON/OFF ratios during 100 cycles. This hybrid interaction is identified by shifts in the D, G, and 2D bands using Raman spectroscopy. The conduction mechanism is proposed to be a space-charge-limited conduction (SCLC) mechanism and trap-assisted tunneling conduction mechanism in the ON and OFF states, respectively. The trapped and detrapped electrons move through the trap sites with external electric fields, and this movement is responsible for the switching mechanism of the CS-GO nanocomposite memory device.

Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3devices for non-volatile memory applications

2016 ◽  
Vol 4 (46) ◽  
pp. 10967-10972 ◽  
Author(s):  
Sujaya Kumar Vishwanath ◽  
Jihoon Kim
Keyword(s):  
Resistive Switching ◽  
Retention Time ◽  
Elevated Temperatures ◽  
Switching Behavior ◽  
Memory Devices ◽  
Bipolar Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.

WOx resistive memory elements for scaled Flash memories

2011 ◽  
Vol 1337 ◽  
Author(s):  
S. Gorji Ghalamestani ◽  
L. Goux ◽  
D.E. Díaz-Droguett ◽  
D. Wouters ◽  
J. G. Lisoni
Keyword(s):  
Resistive Switching ◽  
Photoelectron Spectroscopy ◽  
Time Windows ◽  
Electrical Measurement ◽  
Thin Layers ◽  
Switching Behavior ◽  
Elastic Recoil ◽  
X Ray ◽  
Bipolar Switching ◽  
Switching Characteristics

ABSTRACTWe investigated the resistive switching behavior of WOx films. WOx was obtained from the thermal oxidation of W thin layers. The parameters under investigation were the influence of the temperature (450-500 °C) and time (30-220 s) used to obtain the WOx on the resistive switching characteristics of Si\W\WOx\Metal_electrode ReRAM cells. The metal top electrodes (TE) tested were Pt, Ni, Cu and Au. The elemental composition and microstructure of the samples were characterized by means of elastic recoil detection analysis (ERD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray reflectivity (XRR).Electrical measurement of the WOx-based memory elements revealed bipolar and unipolar switching and this depended upon the oxidation conditions and TE selected. Indeed, switching events were observed in WOx samples obtained either at 450 °C or 500 °C in time windows of 180-200 s and 30-60 s, respectively. Pt and Au TE promoted bipolar switching while unipolar behavior was observed with Ni TE only; no switching events were observed with Cu TE. Good switching characteristics seems not related to the overall thickness, crystallinity and composition of the oxide, but on the W6+/W5+ ratio present on the WOx surface, surface in contact with the TE material. Interestingly, W6+/W5+ ratio can be tuned through the oxidation conditions, showing a path for optimizing the properties of the WOx-based ReRAM cells.

scholarly journals Spin-orbit torque manipulated by fine-tuning of oxygen-induced orbital hybridization

2019 ◽  
Vol 5 (11) ◽  
pp. eaax4278 ◽  
Author(s):  
Yuito Kageyama ◽  
Yuya Tazaki ◽  
Hongyu An ◽  
Takashi Harumoto ◽  
Tenghua Gao ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Scale Effects ◽  
Perpendicular Magnetic Anisotropy ◽  
Atomic Scale ◽  
Fine Tuning ◽  
Spin Orbit ◽  
Spintronic Devices ◽  
Fast Switching ◽  
Orbital Hybridization

Current-induced spin-orbit torques provide an effective way to manipulate magnetization in spintronic devices, promising for fast switching applications in nonvolatile memory and logic units. Recent studies have revealed that the spin-orbit torque is strongly altered by the oxidation of heterostructures with broken inversion symmetry. Although this finding opens a new field of metal-oxide spin-orbitronics, the role of the oxidation in the spin-orbit physics is still unclear. Here, we demonstrate a marked enhancement of the spin-orbit torque induced by a fine-tuning of oxygen-induced modification of orbital hybridization. This is evidenced by a concomitant enhancement of the interface spin-orbit torque, interface spin loss, and interface perpendicular magnetic anisotropy within a narrow range of the oxidation level of metallic heterostructures. This result reveals the crucial role of the atomic-scale effects in the generation of the spin-orbit torques, opening the door to atomic-level engineering of the spin-orbit physics.

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