Kinetics of Crystallization and Segregation: Nucleation in Glass-Forming Systems

2013 ◽  
pp. 219-288 ◽  
Author(s):  
Ivan S. Gutzow ◽  
Jürn W. P. Schmelzer
1996 ◽  
Vol 280-281 ◽  
pp. 127-151 ◽  
Author(s):  
A. Dobreva ◽  
A. Stoyanov ◽  
S. Tzuparska ◽  
I. Gutzow

2000 ◽  
Vol 650 ◽  
Author(s):  
Lance L. Snead ◽  
Martin Balden

ABSTRACTDensification and crystallization kinetics of bulk SiC amorphized by neutron irradiation is studied. The temperature of crystallization onset of this highly pure, fully amorphous bulk SiC was found to be between 875-885°C and crystallization is nearly complete by 950°C. In-situ TEM imaging confirms the onset of crystallization, though thin-film effects apparently alter the kinetics of crystallization above this temperature. It requires >1125°C for complete crystallization of the TEM foil. Annealing at temperatures between the irradiation and crystallization onset temperature is seen to cause significant densification attributed to a relaxation, or reordering, of the as-amorphized structure.


2021 ◽  
Vol 554 ◽  
pp. 120607
Author(s):  
Julia Lubauer ◽  
Renan Belli ◽  
Anselm Petschelt ◽  
Maria Rita Cicconi ◽  
Katrin Hurle ◽  
...  

1980 ◽  
Vol 17 (1) ◽  
pp. 25-38 ◽  
Author(s):  
L. Mladenov ◽  
T. Vladkova ◽  
S. Fakirov

2017 ◽  
Vol 137 ◽  
pp. 127-131 ◽  
Author(s):  
Baran Sarac ◽  
Supriya Bera ◽  
Florian Spieckermann ◽  
Sascha Balakin ◽  
Mihai Stoica ◽  
...  

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