Silicon Oxidation Rate Dependence on Dopant Pile-up

ESSDERC ’89 ◽  
1989 ◽  
pp. 49-52
Author(s):  
E. Biermann
Keyword(s):  
Oxidation Rate ◽  
Rate Dependence ◽  
Silicon Oxidation ◽  
Pile Up

The Oxidation Rate Dependence of Oxidation‐Enhanced Diffusion of Boron and Phosphorus in Silicon

1981 ◽  
Vol 128 (5) ◽  
pp. 1131-1137 ◽  
Author(s):  
A. Miin‐Ron Lin ◽  
Dimitri A. Antoniadis ◽  
Robert W. Dutton
Keyword(s):  
Oxidation Rate ◽  
Rate Dependence ◽  
Enhanced Diffusion ◽  
Phosphorus In Silicon

On the Boron Diffusivity versus Silicon Oxidation Rate

1976 ◽  
Vol 15 (12) ◽  
pp. 2471-2472
Author(s):  
G. Masetti ◽  
S. Solmi ◽  
G. Soncini
Keyword(s):  
Oxidation Rate ◽  
Silicon Oxidation ◽  
Boron Diffusivity

scholarly journals Enhancement of silicon oxidation rate due to tensile mechanical stress

2000 ◽  
Vol 76 (14) ◽  
pp. 1834-1835 ◽  
Author(s):  
Jui-Yuan Yen ◽  
Jenn-Gwo Hwu
Keyword(s):  
Mechanical Stress ◽  
Oxidation Rate ◽  
Silicon Oxidation

Oxidation-rate dependence of phosphorus diffusivity in silicon

1976 ◽  
Vol 33 (4) ◽  
pp. 613-621 ◽  
Author(s):  
G. Masetti ◽  
S. Solmi ◽  
G. Soncini
Keyword(s):  
Oxidation Rate ◽  
Rate Dependence

Asteroids pile up

Nature ◽  
2002 ◽  
Author(s):  
Meera Louis
Keyword(s):  
Pile Up

Anisotropy of Nanoindentation – a tool for the determination of nanocrystal orientation ?

2003 ◽  
Vol 779 ◽  
Author(s):  
David Christopher ◽  
Steven Kenny ◽  
Roger Smith ◽  
Asta Richter ◽  
Bodo Wolf ◽  
...  
Keyword(s):  
Crystal Surface ◽  
Scanning Force Microscopy ◽  
Depth Range ◽  
Dislocation Loops ◽  
Force Microscopy ◽  
Pile Up ◽  
Out Of Plane ◽  
Scanning Force ◽  
Dynamics Simulations

AbstractThe pile up patterns arising in nanoindentation are shown to be indicative of the sample crystal symmetry. To explain and interpret these patterns, complementary molecular dynamics simulations and experiments have been performed to determine the atomistic mechanisms of the nanoindentation process in single crystal Fe{110}. The simulations show that dislocation loops start from the tip and end on the crystal surface propagating outwards along the four in-plane <111> directions. These loops carry material away from the indenter and form bumps on the surface along these directions separated from the piled-up material around the indenter hole. Atoms also move in the two out-of-plane <111> directions causing propagation of subsurface defects and pile-up around the hole. This finding is confirmed by scanning force microscopy mapping of the imprint, the piling-up pattern proving a suitable indicator of the surface crystallography. Experimental force-depth curves over the depth range of a few nanometers do not appear smooth and show distinct pop-ins. On the sub-nanometer scale these pop-ins are also visible in the simulation curves and occur as a result of the initiation of the dislocation loops from the tip.

A MULTISCALE MODEL OF RATE DEPENDENCE OF NANOCRYSTALLINE THIN FILMS

2012 ◽  
Vol 10 (5) ◽  
pp. 441-459 ◽  
Author(s):  
Fernando V. Stump ◽  
Nikhil Karanjgaokar ◽  
Philippe H. Geubelle ◽  
Ioannis Chasiotis
Keyword(s):  
Thin Films ◽  
Multiscale Model ◽  
Rate Dependence ◽  
Nanocrystalline Thin Films

Roles of strain and carrier in silicon oxidation

2020 ◽  
Vol 59 (SM) ◽  
pp. SM0801
Author(s):  
Shuichi Ogawa ◽  
Akitaka Yoshigoe ◽  
Jaiyi Tang ◽  
Yuki Sekihata ◽  
Yuji Takakuwa
Keyword(s):  
Silicon Oxidation
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