AbstractWe have derived and analyzed the wavefunctions and energy states for an asymmetric double quantum well (ADQW), broadened due to interdiffusion or other static interface disorder effects, within a known discreet variable representative approach for solving the one-dimensional Schrodinger equation. The main advantage of this approach is that it yields the energy eigenvalues, and the eigenvectors, in semiconductor nanostructures of different shapes as well as the strengths of the optical transitions between them. The behaviour of ADQW states for the different mutual widths of coupled wells, for the different degree of broadening, and under increasing external electric field is investigated. We have found that interface broadening effects change and shift energy levels, not monotonously, but the resonant conditions near an energy of sub-band coupling regions do not strongly distort. Also, it is shown that an external electric field may help to achieve resonant conditions for inter-sub-band inverse population by intrawell emission of LO-phonons in diffuse ADQW.
Effects of interface disorder on valley splitting in SiGe/Si/SiGe quantum wells