PR_22_0642603_Chipscale_NLO

Multi-microresonator photonic circuits can improve the conversion efficiency of nonlinear optics, realize higher-order, implement programmable filters, and other advances in optical signal processing. However, such structures are challenging to realize in practice. Through a deeper understanding of disorder effects in photonics, we have greatly advanced the state-of-the-art in CROW structures and their applications in linear, nonlinear and quantum optics.

PR_26 Coupled Microring Resonators: Towards Overcoming Disorder Effects

Extended abstract of an invited presentation at the CMOS Emerging Technologies Conference. Long CROWs are experimentally realized which consist of hundreds of coupled silicon microring racetrack resonators fabricated using CMOS-compatible fabrication on silicon-on-insulator (SOI) wafers.

An Empirical Modeling of Gate Voltage-Dependent Behaviors of Amorphous Oxide Semiconductor Thin-Film Transistors including Consideration of Contact Resistance and Disorder Effects at Room Temperature

In this paper, we present an empirical modeling procedure to capture gate bias dependency of amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) while considering contact resistance and disorder effects at room temperature. From the measured transfer characteristics of a pair of TFTs where the channel layer is an amorphous In-Ga-Zn-O (IGZO) AOS, the gate voltage-dependent contact resistance is retrieved with a respective expression derived from the current–voltage relation, which follows a power law as a function of a gate voltage. This additionally allows the accurate extraction of intrinsic channel conductance, in which a disorder effect in the IGZO channel layer is embedded. From the intrinsic channel conductance, the characteristic energy of the band tail states, which represents the degree of channel disorder, can be deduced using the proposed modeling. Finally, the obtained results are also useful for development of an accurate compact TFT model, for which a gate bias-dependent contact resistance and disorder effects are essential.

The Effect of Ossicular Chain Disorders on Sound Transmission and Tinnitus Perception using Electrical Model

Human middle ear ensures sound transfer due its ossicular chain, any disorder or abnormalities in this structure leads to a conductive hearing loss (CHL). Tinnitus is a health problem, associated with hearing loss, it remains a devastating symptom. In this work, we present an electrical model of the human middle ear including middle ear cavities (ZMEC), tympanic membrane with ossicular chain (ZTOC), and stapes complex with cochlea load (ZSC). This model is modified to represent more closely the related pathologies affecting the middle ear. We will focus our analysis on ossicular chain disorder by studying the effect of increasing ossicular chain (OC) stiffness and mass in both normal middle ear structures and disconnected stapes superstructure. The change in middle ear structures and impedance allows us to simulate ossicular chain disorder effects and analyze their impact on sound transmission. This analysis allowed us to know if this disorder can eventually cause tinnitus. The results showed that the effect of ossicular chain anomalies can be studied based on frequency response of middle ear transfer function by applying only the principle of mass and stiffness, and demonstrate compared to clinical results the efficiency and simplicity of using the electrical model.