Low Temperature Epitaxial Crystallization of Amorphous Si by Ion-Beam Irradiation

1989 ◽  
pp. 100-103
Author(s):  
F. Priolo ◽  
A. La Ferla ◽  
E. Rimini
Keyword(s):  
Low Temperature ◽  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Epitaxial Crystallization ◽  
Amorphous Si

Low temperature ion beam irradiation of gallium films

1982 ◽  
Vol 47 (3) ◽  
pp. 227-232 ◽  
Author(s):  
U. G�rlach ◽  
M. Hitzfeld ◽  
P. Ziemann ◽  
W. Buckel
Keyword(s):  
Low Temperature ◽  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation

scholarly journals A positron beam study on vacancy formation in iron by ion beam irradiation at low temperature

2010 ◽  
Vol 225 ◽  
pp. 012023 ◽  
Author(s):  
T Iwai ◽  
K Murakami ◽  
Y Katano ◽  
T Iwata ◽  
T Onitsuka ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Beam ◽  
Positron Beam ◽  
Vacancy Formation ◽  
Beam Irradiation ◽  
Ion Beam Irradiation

Influence of Ion Beam Irradiation on Solid-Phase Regrowth of Amorphous Si on SiO2

2001 ◽  
Vol 78-79 ◽  
pp. 345-348
Author(s):  
I. Tsunoda ◽  
T. Nagata ◽  
Taizoh Sadoh ◽  
A. Kenjo ◽  
Masanobu Miyao
Keyword(s):  
Solid Phase ◽  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Amorphous Si ◽  
Solid Phase Regrowth

How nanocavities in amorphous Si shrink under ion beam irradiation: An in situ study

2002 ◽  
Vol 81 (14) ◽  
pp. 2617-2619 ◽  
Author(s):  
M.-O. Ruault ◽  
F. Fortuna ◽  
H. Bernas ◽  
M. C. Ridgway ◽  
J. S. Williams
Keyword(s):  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
In Situ Study ◽  
Amorphous Si

Segregation of Ag and Cu During Ion Beam and Thermally Induced Recrystallization of Amorphous Si

1988 ◽  
Vol 128 ◽  
Author(s):  
J. S. Custer ◽  
Michael O. Thompson ◽  
J. M. Poatet
Keyword(s):  
Simple Model ◽  
Low Temperature ◽  
Ion Beam ◽  
Critical Concentration ◽  
Thermally Induced ◽  
Epitaxial Crystallization ◽  
Amorphous Si ◽  
Crystal Region

ABSTRACTThe segregation of Ag and Cu impurities in amorphous Si during both thermal and ion beam induced epitaxial crystallization has been studied. During thermal regrowth at 550°C, both Ag and Cu are initially trapped at increasing concentration in the shrinking a-Si layer. At a critical concentration, though, regrowth becomes non-planar and the impurities are no longer entirely trapped in the a-Si. Above 0.08 at% and 0.15 at% respectively, the excess impurity is lost to the crystal region and diffuses rapidly away from the interface. Under low temperature (200 - 400°C) epitaxy induced by a 2.5 MeV Ar+ beam, segregation and trapping are initially observed. As regrowth proceeds, however, the segregation no longer follows the simple model

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