Segregation of Ag and Cu During Ion Beam and Thermally Induced Recrystallization of Amorphous Si

1988 ◽  
Vol 128 ◽  
Author(s):  
J. S. Custer ◽  
Michael O. Thompson ◽  
J. M. Poatet
Keyword(s):  
Simple Model ◽  
Low Temperature ◽  
Ion Beam ◽  
Critical Concentration ◽  
Thermally Induced ◽  
Epitaxial Crystallization ◽  
Amorphous Si ◽  
Crystal Region

ABSTRACTThe segregation of Ag and Cu impurities in amorphous Si during both thermal and ion beam induced epitaxial crystallization has been studied. During thermal regrowth at 550°C, both Ag and Cu are initially trapped at increasing concentration in the shrinking a-Si layer. At a critical concentration, though, regrowth becomes non-planar and the impurities are no longer entirely trapped in the a-Si. Above 0.08 at% and 0.15 at% respectively, the excess impurity is lost to the crystal region and diffuses rapidly away from the interface. Under low temperature (200 - 400°C) epitaxy induced by a 2.5 MeV Ar+ beam, segregation and trapping are initially observed. As regrowth proceeds, however, the segregation no longer follows the simple model

Kinetics, Microstructure And Mechanisms of Ion Beam Induced Epitaxial Crystallization of Semiconductors.

1985 ◽  
Vol 51 ◽  
Author(s):  
R.G. Elliman ◽  
J.S. Williams ◽  
D.M. Maher ◽  
W.L. Brown
Keyword(s):  
Activation Energy ◽  
Simple Model ◽  
Epitaxial Growth ◽  
Ion Beam ◽  
The Other ◽  
Thermally Induced ◽  
Substrate Orientation ◽  
Epitaxial Crystallization ◽  
Temperature Range ◽  
Other Hand

ABSTRACTIon-beam induced epitaxy is shown to be essentially athermal over the temperature range 200-400°C, and to exhibit no dependence on substrate orientation and little dependence on doping in this regime. On the other hand, the formation and propagation of defects during growth and the interaction of the advancing crystal-amorphous interface with implanted impurities is essentially identical for both thermally induced and ion-beam induced epitaxy. These observations lead to a simple model for ion-beam induced epitaxial crystallization in which epitaxial growth is nucleated by defects generated at, or near, the crystal-amorphous interface by the ion beam. Comparisons of ion-beam induced epitaxy and thermally induced epitaxy suggest that the 2.7 eV activation energy associated with the latter process is dominated by a 2.0 eV nucleation step.

Growth of Si1-x.Snx Layers on Si by Ion-Beam-Induced Epitaxial Crystallization (Ibiec) and Solid Phase Epitaxial Growth (Speg)

1995 ◽  
Vol 396 ◽  
Author(s):  
N. Kobayashi ◽  
M. Hasegawa ◽  
N. Hayashi ◽  
H. Katsumata ◽  
Y. Makita ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Peak Concentration ◽  
Solid Phase ◽  
Ion Beam ◽  
Alloy Layer ◽  
Group Iv ◽  
Epitaxial Crystallization ◽  
Semiconductor Thin Films ◽  
Amorphous Si ◽  
Alloy Semiconductors

AbstractSynthesis of metastable group-IV binary alloy semiconductor thin films on Si was achieved by the crystalline growth of Si1-xSnx layers using Sn ion implantation into Si(100) followed either by ion-beam-induced epitaxial crystallization (IBIEC) or solid phase epitaxial growth (SPEG). Si(100) wafers were implanted at room temperature with 110keV 120Sn ions to a dose of 1×1016 cm-2 (x=0.029 at peak concentration) and 2x1016 cm-2 (x=0.058 at peak concentration). By this process about 90nm-thick amorphous Si1-xSnx and about 30nm-thick deeper amorphous Si layers were formed. IBIEC experiments performed with 400keV Ar ions at 300–400°C have induced an epitaxial crystallization of the amorphous alloy layers up to the surface and lattice site occupation of Sn atoms for samples with the lower Sn concentration (LC). XRD analyses have revealed a partial strain compensation for the crystallized layer. Samples with the higher Sn concentration (HC) have shown an epitaxial crystallization accompanied by defects around the peak Sn concentration. SPEG experiments up to 750°C for LC samples have shown an epitaxial crystallization of the fully strained alloy layer, whereas those for HC samples up to 750°C have revealed a collapse of the epitaxial growth around the interface of the alloy layer and the Si substrate. Photoluminescence (PL) emission from both IBIEC-grown and SPEG-grown samples with the lower Sn concentration has shown similar peaks to those by ion-implanted and annealed Si samples with intense I1 or I1-related (Ar) peaks. Present results suggest that IBIEC has a feature for the non-thermal equilibrium fabrication of Si-Sn alloy semiconductors.

High Concentrations of Erbium In Crystal Silicon by Thermal Or Ion-Beam-Induced Epitaxy of Erbium-Implanted Amorphous Silicon

1993 ◽  
Vol 301 ◽  
Author(s):  
J. S. Custer ◽  
A. Polman ◽  
E. Snoeks ◽  
G. N. van den Hoven
Keyword(s):  
Single Crystal ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Ion Beam ◽  
Solid Phase Epitaxy ◽  
Crystal Silicon ◽  
Epitaxial Crystallization ◽  
Amorphous Si ◽  
High Concentrations ◽  
Er Doped

ABSTRACTSolid phase epitaxy and ion-beam-induced epitaxial crystallization of Er-doped amorphous Si are used to incorporate high concentrations of Er in crystal Si. During solid phase epitaxy, substantial segregation and trapping of Er is observed, with maximum Er concentrations trapped in single crystal Si of up to 2 × 1020 /cm3. Ion-beam-induced regrowth results in very little segregation, with Er concentrations of more than 5 × 1020 /cm3 achievable. Photoluminescence from the incorporated Er is observed.

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