Generation of dense and well-collimated positron beam via ultra-intense laser colliding with a flying plasma layer

With the forthcoming 10-100PW laser facilities, laser-driven electron-positron-pair production has gained particular interest. Here a scheme to enhance the generation of dense electron-positron-pairs is proposed and numerically demonstrated, employing double laser pulses at the intensity level of 10^23 W cm^(-2). The first laser accelerates a thin foil to a relativistic speed via the radiation-pressure-acceleration mechanism and a counter-propagating laser irradiates this flying plasma layer. The simulation results indicate that a high-yield and well-collimated positron beam (~5.5×10^10 positrons/pulse, 8.8nC/pulse) is generated with a large peak density(1.1×10^21 cm^(-3) ) by using tens-of-PW laser pulses.

The physics program of the PADME experiment

PADME (Positron Annihilation into Dark Matter Experiment) is a fixed target experiment located at the Beam Test Facility (BTF) at the Laboratori Nazionali di Frascati (LNF) designed to search for a massive dark photon A' in the process e+e- into γA', using a positron beam of energy up to 550 MeV.

On the Limitations of Positron Annihilation Spectroscopy in the Investigation of Ion-Implanted FeCr Samples

New materials for advanced fission/fusion nuclear facilities must inevitably demonstrate resistance to radiation embrittlement. Thermal and radiation ageing accompanied by stress corrosion cracking are dominant effects that limit the operational condition and safe lifetime of the newest nuclear facilities. To study these phenomena and improve the current understanding of various aspects of radiation embrittlement, ion bombardment experiments are widely used as a surrogate for neutron irradiation. While avoiding the induced activity, typical for neutron-irradiated samples, is a clear benefit of the ion implantation, the shallow near-surface region of the modified materials may be a complication to the post-irradiation examination (PIE). However, microstructural defects induced by ion implantation can be effectively investigated using various spectroscopic techniques, including slow-positron beam spectroscopy. This method, typically represented by techniques of positron annihilation lifetime spectroscopy and Doppler broadening spectroscopy, enables a unique depth-profile characterisation of the near-surface region affected by ion bombardment or corrosion degradation. One of the best slow-positron beam facilities is available at the pulsed low-energy positron system (PLEPS), operated at FRM-II reactor in Munich (Germany). Bulk studies (such as high energy ion implantation or neutron irradiation experiments) can be, on the other hand, effectively performed using radioisotope positron sources. In this paper, we outline some basics of the two approaches and provide some recommendations to improve the validity of the positron annihilation spectroscopy (PAS) data obtained on ion-irradiated samples using a conventional 22Na positron source.

Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam

A process for activating Mg and its relationship with vacancy-type defects in Mg-implanted GaN were studied by positron annihilation spectroscopy. Mg+ ions were implanted with an energy of 10 keV, and the Mg concentration in the subsurface region (≤ 50 nm) was on the order of 1019 cm−3. After the Mg-implantation, N+ ions were implanted to provide a 300-nm-deep box profile with a N concentration of 6 × 1018 cm−3. From capacitance–voltage measurements, the sequential implantation of N was found to enhance the activation of Mg. For N-implanted GaN before annealing, the major defect species were determined to Ga-vacancy related defects such as divacancy. After annealing below 1000 °C, the clustering of vacancies was observed. Above 1200 °C annealing, however, the size of the vacancies started to decrease, which was due to recombinations of vacancy clusters and excess N atoms in the damaged region. The suppression of vacancy clustering by sequential N-implantation in Mg-implanted GaN was attributed to the origin of the enhancement of the Mg activation.