Carrier Concentration Dependent Phonon Frequencies Deduced from Magnetophonon Resonance in GaInAs/InP Quantum Wells

1989 ◽  
pp. 545-548 ◽  
Author(s):  
D. R. Leadley ◽  
R. J. Nicholas ◽  
L. L. Taylor ◽  
S. J. Bass ◽  
M. S. Skolnick
Keyword(s):  
Quantum Wells ◽  
Carrier Concentration ◽  
Magnetophonon Resonance

Magnetophonon resonance in double quantum wells

2009 ◽  
Vol 79 (19) ◽  
Author(s):  
D. Ploch ◽  
E. M. Sheregii ◽  
M. Marchewka ◽  
M. Wozny ◽  
G. Tomaka
Keyword(s):  
Quantum Wells ◽  
Double Quantum ◽  
Magnetophonon Resonance

Effect of Al Composition on the Deep Level Donors of AlxGa1-xSb/lnAs Single Quantum Wells

1992 ◽  
Vol 262 ◽  
Author(s):  
Irai Lo ◽  
W. C. Mitchel ◽  
C. E. Stutz ◽  
K. R. Evans ◽  
M. O. Manasreh
Keyword(s):  
Quantum Wells ◽  
Carrier Concentration ◽  
Electron Capture ◽  
Low Temperatures ◽  
Deep Level ◽  
Time Dependent ◽  
Universal Property ◽  
Persistent Photoconductivity ◽  
Single Quantum ◽  
Deep Donor

ABSTRACTWe have performed Shubnikov-de Haas (SdH) measurements on the AlxGa1-xSb/InAs QW's with x from 0.1 to 1.0 under the negative persistent photoconductivity (NPPC) conditions and confirmed the prediction of Ionized Deep Donor model that the NPPC effect is a universal property for the materials containing ionized deep donors at low temperatures. The time-dependent recombination (electron capture) of the ionized deep donors is similar to that of DX centers. The saturated reduction of carrier concentration in the InAs well increases with increasing x, and rises steeply at about x=0.4. The concentration of deep donors which cause the NPPC in the AlxGa1-xSb/InAs QW's increases with the Al composition.

Magnetophonon resonance as method of controlling of the thermal stress in the multiple quantum wells

2000 ◽  
Vol 288 (2) ◽  
pp. 138-141 ◽  
Author(s):  
G. Tomaka ◽  
J. Cebulski ◽  
E.M. Sheregii ◽  
W. Sciuk ◽  
W. Strupiński ◽  
...  
Keyword(s):  
Thermal Stress ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Magnetophonon Resonance

scholarly journals Determination of the carrier concentration in InGaAsN∕GaAs single quantum wells using Raman scattering

2004 ◽  
Vol 85 (21) ◽  
pp. 4905-4907 ◽  
Author(s):  
Patrick A. Grandt ◽  
Aureus E. Griffith ◽  
M. O. Manasreh ◽  
D. J. Friedman ◽  
S. Doğan ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Carrier Concentration ◽  
Single Quantum

scholarly journals Luminescence and carrier concentration in Sb-containing narrow bandgap quantum wells under optical excitation

2017 ◽  
Vol 917 ◽  
pp. 062027
Author(s):  
A V Selivanov ◽  
M Ya Vinnichenko ◽  
I S Makhov ◽  
D A Firsov ◽  
L E Vorobjev ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Carrier Concentration ◽  
Optical Excitation ◽  
Narrow Bandgap

Dependence of the carrier concentration on the current in mid-infrared injection lasers with quantum wells

2013 ◽  
Vol 47 (11) ◽  
pp. 1513-1516 ◽  
Author(s):  
M. Ya. Vinnichenko ◽  
L. E. Vorobjev ◽  
D. A. Firsov ◽  
M. O. Mashko ◽  
R. M. Balagula ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Carrier Concentration ◽  
Mid Infrared ◽  
Injection Lasers

Hot-electron magnetophonon resonance of quantum wells in tilted magnetic fields

1995 ◽  
Vol 52 (15) ◽  
pp. 11089-11095 ◽  
Author(s):  
Jai Yon Ryu ◽  
Young Bong Kang ◽  
Sangshik Oh ◽  
Akira Suzuki ◽  
Sang Don Choi
Keyword(s):  
Magnetic Fields ◽  
Quantum Wells ◽  
Hot Electron ◽  
Magnetophonon Resonance

Method for determining the radiative efficiency of GaInN quantum wells based on the width of efficiency-versus-carrier-concentration curve

2012 ◽  
Vol 101 (24) ◽  
pp. 241104 ◽  
Author(s):  
Guan-Bo Lin ◽  
Qifeng Shan ◽  
Andrew J. Birkel ◽  
Jaehee Cho ◽  
E. Fred Schubert ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Carrier Concentration ◽  
Concentration Curve ◽  
Radiative Efficiency
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