scholarly journals Luminescence and carrier concentration in Sb-containing narrow bandgap quantum wells under optical excitation

2017 ◽  
Vol 917 ◽  
pp. 062027
Author(s):  
A V Selivanov ◽  
M Ya Vinnichenko ◽  
I S Makhov ◽  
D A Firsov ◽  
L E Vorobjev ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Carrier Concentration ◽  
Optical Excitation ◽  
Narrow Bandgap

Dynamics of inter- and intra-growth island exciton transfer in GaAs single quantum wells under direct picosecond optical excitation

1991 ◽  
Vol 9 (2) ◽  
pp. 251-254 ◽  
Author(s):  
Kenzo Fujiwara ◽  
Hisashi Katahama ◽  
Kyozo Kanamoto ◽  
Roberto Cingolani ◽  
Klaus Ploog
Keyword(s):  
Quantum Wells ◽  
Optical Excitation ◽  
Single Quantum ◽  
Exciton Transfer

Spin–lattice relaxation in semimagnetic CdMnTe/CdMgZnTe quantum wells with a two-dimensional hole gas tuned by optical excitation

2001 ◽  
Vol 120 (1) ◽  
pp. 17-20 ◽  
Author(s):  
A.V Scherbakov ◽  
A.V Akimov ◽  
D.R Yakovlev ◽  
W Ossau ◽  
L.W Molenkamp ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Excitation ◽  
Lattice Relaxation ◽  
Spin Lattice Relaxation ◽  
Two Dimensional ◽  
Spin Lattice

Effect of Al Composition on the Deep Level Donors of AlxGa1-xSb/lnAs Single Quantum Wells

1992 ◽  
Vol 262 ◽  
Author(s):  
Irai Lo ◽  
W. C. Mitchel ◽  
C. E. Stutz ◽  
K. R. Evans ◽  
M. O. Manasreh
Keyword(s):  
Quantum Wells ◽  
Carrier Concentration ◽  
Electron Capture ◽  
Low Temperatures ◽  
Deep Level ◽  
Time Dependent ◽  
Universal Property ◽  
Persistent Photoconductivity ◽  
Single Quantum ◽  
Deep Donor

ABSTRACTWe have performed Shubnikov-de Haas (SdH) measurements on the AlxGa1-xSb/InAs QW's with x from 0.1 to 1.0 under the negative persistent photoconductivity (NPPC) conditions and confirmed the prediction of Ionized Deep Donor model that the NPPC effect is a universal property for the materials containing ionized deep donors at low temperatures. The time-dependent recombination (electron capture) of the ionized deep donors is similar to that of DX centers. The saturated reduction of carrier concentration in the InAs well increases with increasing x, and rises steeply at about x=0.4. The concentration of deep donors which cause the NPPC in the AlxGa1-xSb/InAs QW's increases with the Al composition.

Low Temperature Photoluminescence Studies of Narrow Bandgap Gaassbn Quantum Wells on GaAs

2002 ◽  
Vol 744 ◽  
Author(s):  
K.E. Waldrip ◽  
E.D. Jones ◽  
N.A. Modine ◽  
F. Jalali ◽  
J.F. Klem ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Band Gap ◽  
First Principles ◽  
Structure Calculation ◽  
Ex Situ ◽  
Band Structure Calculation ◽  
Narrow Bandgap ◽  
Order Of Magnitude ◽  
Photoluminescence Studies

We present low-temperature (T = 4K) photoluminescence studies of the effect of adding nitrogen to 6-nm-wide single-strained GaAsSb quantum wells on GaAs. The samples were grown by both MBE and MOCVD tech-niques. The nominal Sb concentration is about 30%. Adding about 1 to 2% N drastically reduced the bandgap energies from 1 to 0.75 eV, or 1.20 to 1.64 μm. Upon performing ex situ rapid thermal anneals, 825°C for 10s, the band gap energies as well as the photoluminescence intensities increased. The intensities increased by an order of magnitude for the annealed samples and the band gap energies increased by about 50 - 100 meV, depending on growth temperatures. The photoluminescence linewidths tended to decrease upon annealing. Preliminary results of a first-principles band structure calculation for the GaAsSbN system are also presented.

scholarly journals Determination of the carrier concentration in InGaAsN∕GaAs single quantum wells using Raman scattering

2004 ◽  
Vol 85 (21) ◽  
pp. 4905-4907 ◽  
Author(s):  
Patrick A. Grandt ◽  
Aureus E. Griffith ◽  
M. O. Manasreh ◽  
D. J. Friedman ◽  
S. Doğan ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Carrier Concentration ◽  
Single Quantum

LIGHT EMISSION, ABSORPTION AND AMPLIFICATION IN InAs/GaAs QUANTUM DOTS AND GaAs/AlGaAs QUANTUM WELLS RESULTING FROM OPTICAL PUMPING

2007 ◽  
Vol 06 (03n04) ◽  
pp. 241-244 ◽  
Author(s):  
D. A. FIRSOV ◽  
L. E. VOROBJEV ◽  
M. A. BARZILOVICH ◽  
V. YU. PANEVIN ◽  
I. V. MIKHAYLOV ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Wells ◽  
Light Absorption ◽  
Optical Pumping ◽  
Light Emission ◽  
Optical Excitation ◽  
Ground Level ◽  
Infrared Light ◽  
Mid Infrared ◽  
Gaas Quantum Dot

Optical phenomena in quantum dot and quantum well nanostructures aimed at the development of mid-infrared lasers based on intraband electron transitions are investigated in the conditions of interband optical pumping. Evolution of photoluminescence spectra and interband light absorption with intensity of interband optical excitation is investigated in InAs / GaAs quantum dot structures. Optically induced intersubband mid-infrared light absorption is studied in undoped tunnel-coupled GaAs / AlGaAs quantum wells. The stabilization of the electron concentration at the ground level of tunnel-coupled quantum wells under increasing pumping level is established.

Effect of Intense Intersubband Optical Excitation on the Electron Distribution in GaAs/AlAs Quantum Wells

1995 ◽  
Vol 34 (Part 1, No. 11) ◽  
pp. 5989-5992 ◽  
Author(s):  
Soichiro Tsujino ◽  
Hidefumi Akiyama ◽  
Hiroharu Sugawara ◽  
Mathilde Rüfenacht ◽  
Yutaka Kadoya ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electron Distribution ◽  
Optical Excitation

Dependence of the carrier concentration on the current in mid-infrared injection lasers with quantum wells

2013 ◽  
Vol 47 (11) ◽  
pp. 1513-1516 ◽  
Author(s):  
M. Ya. Vinnichenko ◽  
L. E. Vorobjev ◽  
D. A. Firsov ◽  
M. O. Mashko ◽  
R. M. Balagula ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Carrier Concentration ◽  
Mid Infrared ◽  
Injection Lasers
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