Effect of Al Composition on the Deep Level Donors of AlxGa1-xSb/lnAs Single Quantum Wells

1992 ◽  
Vol 262 ◽  
Author(s):  
Irai Lo ◽  
W. C. Mitchel ◽  
C. E. Stutz ◽  
K. R. Evans ◽  
M. O. Manasreh
Keyword(s):  
Quantum Wells ◽  
Carrier Concentration ◽  
Electron Capture ◽  
Low Temperatures ◽  
Deep Level ◽  
Time Dependent ◽  
Universal Property ◽  
Persistent Photoconductivity ◽  
Single Quantum ◽  
Deep Donor

ABSTRACTWe have performed Shubnikov-de Haas (SdH) measurements on the AlxGa1-xSb/InAs QW's with x from 0.1 to 1.0 under the negative persistent photoconductivity (NPPC) conditions and confirmed the prediction of Ionized Deep Donor model that the NPPC effect is a universal property for the materials containing ionized deep donors at low temperatures. The time-dependent recombination (electron capture) of the ionized deep donors is similar to that of DX centers. The saturated reduction of carrier concentration in the InAs well increases with increasing x, and rises steeply at about x=0.4. The concentration of deep donors which cause the NPPC in the AlxGa1-xSb/InAs QW's increases with the Al composition.

The Negative Persistent Photoconductivity in the Deep Quantum Wells

1992 ◽  
Vol 281 ◽  
Author(s):  
Ikai Lo ◽  
W. C. Mttchel ◽  
C. E. Stutz ◽  
M. Y. Yen
Keyword(s):  
Quantum Wells ◽  
Quantum Hall Effect ◽  
Low Temperatures ◽  
General Property ◽  
Quantum Hall ◽  
Time Dependent ◽  
Persistent Photoconductivity ◽  
Deep Donor ◽  
Dx Center ◽  
Haas Effect

ABSTRACTWe have measured the Shubnikov-de Haas effect and Quantum Hall effect on the AlxGa1−xSb/InAs quantum wells for the A1 composition (x) from 0.1 to 1.0 under the negative persistent photoconductivity (NPPC) conditions. It confirmed the prediction of ionized deep donor model that the NPPC effect is a general property for the materials containing ionized deep donors at low temperatures. The time-dependent recombination (electron capture) of the ionized deep donors has the similar property to that of DX centers. The saturated reduction of carrier concentration in the InAs well increases with increasing x, and rises steeply at about x=0.4. By comparing with the concentration of the DX center-like deep donor in the bulk AlxGa1−xSb, we believe that the ionized deep donors which cause the NPPC in the AlxGa1−xSb,/InAs QW's are the DX center-like deep donors in the AlxGa1−xSb layers.

Transport and persistent photoconductivity in INP/INGAAS single quantum wells

1986 ◽  
Vol 2 (4) ◽  
pp. 369-372 ◽  
Author(s):  
M.J. Kane ◽  
D.A. Anderson ◽  
L.L. Taylor ◽  
S.J. Bass
Keyword(s):  
Quantum Wells ◽  
Persistent Photoconductivity ◽  
Single Quantum

Transport and persistent photoconductivity in InGaAs/InP single quantum wells

1986 ◽  
Vol 49 (20) ◽  
pp. 1360-1362 ◽  
Author(s):  
D. A. Anderson ◽  
S. J. Bass ◽  
M. J. Kane ◽  
L. L. Taylor
Keyword(s):  
Quantum Wells ◽  
Persistent Photoconductivity ◽  
Single Quantum

scholarly journals Determination of the carrier concentration in InGaAsN∕GaAs single quantum wells using Raman scattering

2004 ◽  
Vol 85 (21) ◽  
pp. 4905-4907 ◽  
Author(s):  
Patrick A. Grandt ◽  
Aureus E. Griffith ◽  
M. O. Manasreh ◽  
D. J. Friedman ◽  
S. Doğan ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Carrier Concentration ◽  
Single Quantum

scholarly journals Conduction band offsets in CdZnSSe/ZnSSe single quantum wells measured by deep level transient spectroscopy

1996 ◽  
Vol 68 (25) ◽  
pp. 3591-3593 ◽  
Author(s):  
P. F. Baude ◽  
M. A. Haase ◽  
G. M. Haugen ◽  
K. K. Law ◽  
T. J. Miller ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Single Quantum ◽  
Band Offsets ◽  
Transient Spectroscopy

A deep level transient spectroscopic study of boron-ion-implanted single quantum wells

1997 ◽  
Vol 9 (16) ◽  
pp. 3427-3433
Author(s):  
Fang Lu ◽  
Jianbao Wang ◽  
Jiayu Jiang ◽  
Dawei Gong ◽  
Henghui Sun ◽  
...  
Keyword(s):  
Spectroscopic Study ◽  
Quantum Wells ◽  
Deep Level ◽  
Single Quantum ◽  
Ion Implanted

Strain-Induced Reconstruction of Impurity States in PbTe(Ga) Films

1993 ◽  
Vol 308 ◽  
Author(s):  
Boris A. Akimov ◽  
Ludmila I. Ryabova ◽  
Evgeniy I. Slynko
Keyword(s):  
Electric Field ◽  
Cooling Rate ◽  
Carrier Concentration ◽  
Low Temperatures ◽  
Free Carrier ◽  
Rapid Decrease ◽  
Laser Deposition ◽  
Persistent Photoconductivity ◽  
Impurity States ◽  
Heating Up

ABSTRACTn-type PbTe(Ga) films were grown by the laser deposition and the hot wall techniques on BaF2 substrates in <111> orientation. Doping results in the appearance of a high-ohmic state with nearly intrinsic free carrier concentration at low temperatures and activation character of conductivity at T∼300 K. Persistent photoconductivity has been observed at T < 100 K. In the hot wall-grown layers a new effect of bistability during the cooling-heating-cooling cycles has been found. On the first stage of the cycle a rapid decrease of resistivity (∼3 orders of magnitude) is observed at To∼50 K. The value of To changes by ± 15 K depending on the cooling rate. After a brief heating up to 80 K the subsequent cooling results in the high-ohmic state of the layer at the low temperatures. This state seems to be unstable. Relaxation to the low ohmic state can be accelerated by the application of electric field. The effect may be understood in terms of bistability of the Ga impurity charge state under the action of strain between the film and the substrate during the cooling-down process.

EFFECTS OF A SINGLE QUANTUM SPIN ON JOSEPHSON OSCILLATIONS

2006 ◽  
Vol 20 (19) ◽  
pp. 2779-2784
Author(s):  
MARINA HRUŠKA ◽  
LEV BULAEVSKII ◽  
ALEXANDER SHNIRMAN ◽  
DARRYL SMITH
Keyword(s):  
Magnetic Field ◽  
Josephson Junction ◽  
Low Temperatures ◽  
Quantum Spin ◽  
Time Dependent ◽  
Single Quantum ◽  
Initial Value ◽  
Dc Magnetic Field ◽  
Superconducting Ring ◽  
Initial Spin State

We consider a single localized spin-1/2 placed between singlet superconducting leads of a Josephson junction inserted in a superconducting ring, subject to a dc magnetic field B || z. Turning on the tunneling or a time-dependent flux in a superconducting ring, induces oscillations of the Josephson current, with an amplitude sensitive to the initial value of the z-component of the spin, Sz = ±1/2, which allows for a measurement of the initial spin state. At low temperatures when effects of quasiparticles are negligible, this procedure realizes a quantum-non-demolition (QND) measurement of Sz.

Sign in / Sign up

Export Citation Format

Share Document