scholarly journals Determination of the carrier concentration in InGaAsN∕GaAs single quantum wells using Raman scattering

2004 ◽  
Vol 85 (21) ◽  
pp. 4905-4907 ◽  
Author(s):  
Patrick A. Grandt ◽  
Aureus E. Griffith ◽  
M. O. Manasreh ◽  
D. J. Friedman ◽  
S. Doğan ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Carrier Concentration ◽  
Single Quantum

Effect of Al Composition on the Deep Level Donors of AlxGa1-xSb/lnAs Single Quantum Wells

1992 ◽  
Vol 262 ◽  
Author(s):  
Irai Lo ◽  
W. C. Mitchel ◽  
C. E. Stutz ◽  
K. R. Evans ◽  
M. O. Manasreh
Keyword(s):  
Quantum Wells ◽  
Carrier Concentration ◽  
Electron Capture ◽  
Low Temperatures ◽  
Deep Level ◽  
Time Dependent ◽  
Universal Property ◽  
Persistent Photoconductivity ◽  
Single Quantum ◽  
Deep Donor

ABSTRACTWe have performed Shubnikov-de Haas (SdH) measurements on the AlxGa1-xSb/InAs QW's with x from 0.1 to 1.0 under the negative persistent photoconductivity (NPPC) conditions and confirmed the prediction of Ionized Deep Donor model that the NPPC effect is a universal property for the materials containing ionized deep donors at low temperatures. The time-dependent recombination (electron capture) of the ionized deep donors is similar to that of DX centers. The saturated reduction of carrier concentration in the InAs well increases with increasing x, and rises steeply at about x=0.4. The concentration of deep donors which cause the NPPC in the AlxGa1-xSb/InAs QW's increases with the Al composition.

scholarly journals Intersubband electronic Raman scattering in narrow GaAs single quantum wells dominated by single-particle excitations

2004 ◽  
Vol 70 (15) ◽  
Author(s):  
Takeya Unuma ◽  
Kensuke Kobayashi ◽  
Aishi Yamamoto ◽  
Masahiro Yoshita ◽  
Yoshiaki Hashimoto ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Single Particle ◽  
Single Quantum ◽  
Electronic Raman Scattering

Determination of the g-factor of n-type HgTe/Hg1−xCdxTe single quantum wells

2003 ◽  
Vol 34 (3-6) ◽  
pp. 519-524
Author(s):  
G Landwehr ◽  
X.C Zhang ◽  
K Ortner ◽  
A Pfeuffer-Jeschke ◽  
C.R Becker
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
G Factor

Resonant Raman Scattering in GaN/Al0.15 Ga0.85N and InyGa1-yN/GaN/AlxGa1-xN Heterostructures

1997 ◽  
Vol 468 ◽  
Author(s):  
D. Behr ◽  
R. Niebuhr ◽  
H. Obloh ◽  
J. Wagner ◽  
K. H. Bachem ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Phonon Mode ◽  
Phonon Frequency ◽  
Material System ◽  
Single Quantum ◽  
System A ◽  
Resonant Raman ◽  
Resonant Raman Scattering ◽  
Excitation Conditions

ABSTRACTWe report on resonant Raman scattering in Al0.15Ga0.85N/GaN single quantum wells (QWs) and AlxGa1-xN/GaN/lnyGa1-yN heterostructures. By choosing appropriate excitation conditions we could probe selectively the GaN quantum well or the Al0.15Ga0.85N barrier of Al0.15Ga0.85N/GaN single quantum wells. For the InxGa1-xN material system a linear frequency shift of the E2- and A1(LO) phonon mode to lower frequencies was found with increasing In content. The shift was determined to -0.79cm-1 per % In content for the A,(LO) phonon frequency. Resonant excitation of AlxGa1-xN/GaN/InyGa1-YN heterostructures enabled us to detect phonon signals from the InxGa1-xN layer in the heterostructure and to determine its In content.

Spin-flip Raman scattering from donor-bound electrons inCd1−xMnxTe/Cd1−yMgyTe single quantum wells

1997 ◽  
Vol 55 (24) ◽  
pp. 16376-16384 ◽  
Author(s):  
R. Meyer ◽  
M. Dahl ◽  
G. Schaack ◽  
A. Waag
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Single Quantum ◽  
Spin Flip ◽  
Bound Electrons

Electron and holegfactors measured by spin-flip Raman scattering in CdTe/Cd1−xMgxTe single quantum wells

1997 ◽  
Vol 56 (4) ◽  
pp. 2114-2119 ◽  
Author(s):  
A. A. Sirenko ◽  
T. Ruf ◽  
M. Cardona ◽  
D. R. Yakovlev ◽  
W. Ossau ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Single Quantum ◽  
Spin Flip
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