Investigation of Semiconductor Optical Amplifier for DWDM System with 50 GHz Channel Spacing

Author(s):  
Aruna Rani ◽  
Sanjeev Dewra
2017 ◽  
Vol 38 (3) ◽  
Author(s):  
Aruna Rani ◽  
Sanjeev Dewra

AbstractThis paper investigates the performance of an optical system based on optimized semiconductor optical amplifier (SOA) at 160 Gbps with 0.8 nm channel spacing. Transmission distances up to 280 km at –30 dBm input signal power and up to 247 km at –32 dBm input signal power with acceptable bit error rate (BER) and


Laser Physics ◽  
2013 ◽  
Vol 23 (9) ◽  
pp. 095104 ◽  
Author(s):  
H Y Hsu ◽  
Y L Yu ◽  
C C Tsai ◽  
S K Liaw ◽  
N K Chen ◽  
...  

2006 ◽  
Vol 18 (21) ◽  
pp. 2302-2304 ◽  
Author(s):  
Sookyoung Roh ◽  
Seunghwan Chung ◽  
Yong Wook Lee ◽  
Ilyong Yoon ◽  
Byoungho Lee

2020 ◽  
Vol 10 (4) ◽  
pp. 369-380
Author(s):  
K. Maji ◽  
K. Mukherjee ◽  
A. Raja

All optical tri-state frequency encoded logic gates NOT and NAND are proposed and numerically investigated using TOAD based interferometric switch for the first time to the best of our knowledge. The optical power spectrum, extinction ratio, contrast ration, and amplified spontaneous noise are calculated to analyze and confirm practical feasibility of the gates. The proposed device works for low switching energy and has high contrast and extinction ratio as indicated in this work.


2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Ashif Raja ◽  
Kousik Mukherjee ◽  
Jitendra Nath Roy

Abstract Semiconductor optical amplifier-based polarization rotation is utilized in designing all-optical AND gate at 100 Gbps. The AND gate shows high extinction ratio (ER ∼ 15 dB), contrast ratio (CR ∼ 18 dB) and quality factor (Q-factor ∼ 16 dB). The effect of the amplified spontaneous emission noise on the performances is also investigated. The AND gate has relative eye opening (REO) varying from 93.52 to 97.1% for 10–30 dB unsaturated gain. Using the AND gate a majority voting gate is designed and analyzed and has Q ∼ 11.7 dB with REO ∼ 91%.


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