ABSTRACTHigh-dose ion implantation (1017 ions-cm−2) of C+, N+, and O+ at 50 KeV into silicon followed by pulsed laser annealing at 1.06 μm was studied. Formation of SiC, Si3N4, and SiO2 has been observed and investigated using Transmission Electron Microscopy (TEM) and Differential Fourier-Transform Infrared (FT-IR) Spectroscopy. Furthermore, in N+-implanted and laser-annealed silicon samples, we have observed a cell-like structure which has been identified to be spheroidal polycrystalline silicon formed by the rapid laser irradiation.
The effect of the pulsed – laser annealing on the parameters of CdS thin layers in the medium of oxygen was studied. The CdS thin layers were deposited by spray pyrolysis at different technological conditions. The changes of the layers’ characteristics were studied by SEM, XRD and XPS and electrical measurements were carried out. The results showed that a change in the morphology and the phase composition of the surface occurred; a by-surface layer consisted of CdО with high conductivity was formed in consequence of oxidation of CdS. The parameters of the CdS thin layers were retained in- depth after pulsed laser annealing. These results are discussed in the context of transparent layers in solar cells.
SEM CHARACTERIZATION OF EFG POLYCRYSTALLINE SILICON SOLAR CELLS
REALIZED BY ION IMPLANTATION AND LASER ANNEALING WITH OVERLAPPING
PULSES