Ion Implantation without Mass Analysis and Laser Annealing for Fabrication of Silicon Solar Cells

1983 ◽  
pp. 36-43
Author(s):  
J. Com-Nougué ◽  
J. C. Muller
Keyword(s):  
Solar Cells ◽  
Ion Implantation ◽  
Laser Annealing ◽  
Silicon Solar Cells ◽  
Mass Analysis

Silicon Solar Cells Fabricated by Ion Implantation and Laser Annealing

1980 ◽  
Vol 19 (S2) ◽  
pp. 55 ◽  
Author(s):  
Haruo Itoh ◽  
Hiroshi Tamura ◽  
Masanobu Miyao ◽  
Terunori Warabisako ◽  
Kazuo Itoh ◽  
...  
Keyword(s):  
Solar Cells ◽  
Ion Implantation ◽  
Laser Annealing ◽  
Silicon Solar Cells

Low Cost Ion Implantation for Polycristalline Silicon Solar Cells

1978 ◽  
pp. 897-909 ◽  
Author(s):  
J. C. Muller ◽  
J. P. Ponpon ◽  
J. J. Grob ◽  
A. Grob ◽  
R. Stuck ◽  
...  
Keyword(s):  
Solar Cells ◽  
Ion Implantation ◽  
Low Cost ◽  
Silicon Solar Cells

Potassium Ion Implantation Doping of the n-Layer for p-i-n Amorphous Silicon Solar Cells

1991 ◽  
pp. 1072-1074 ◽  
Author(s):  
R. Rizzoli ◽  
C. Summonte ◽  
R. Galloni ◽  
F. Zignani ◽  
A. Nylandsted Larsen
Keyword(s):  
Solar Cells ◽  
Ion Implantation ◽  
Amorphous Silicon ◽  
Potassium Ion ◽  
Silicon Solar Cells

Ion implantation of boric molecules for silicon solar cells

2015 ◽  
Vol 142 ◽  
pp. 12-17 ◽  
Author(s):  
Jan Krügener ◽  
Robby Peibst ◽  
Eberhard Bugiel ◽  
Dominic Tetzlaff ◽  
Fabian Kiefer ◽  
...  
Keyword(s):  
Solar Cells ◽  
Ion Implantation ◽  
Silicon Solar Cells

Beam Annealing of Ion-Implanted Gaas and Inp

1980 ◽  
Vol 1 ◽  
Author(s):  
J. C. C. Fan ◽  
R. L. Chapman ◽  
J. P. Donnelly ◽  
G. W. Turner ◽  
C. O. Bozler
Keyword(s):  
Solar Cells ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Fermi Level ◽  
Laser Annealing ◽  
Electrical Activation ◽  
Fermi Level Pinning ◽  
P Type ◽  
Conversion Efficiencies ◽  
Ion Implanted

ABSTRACTA scanned cw Nd: YAG laser was used to anneal ion-implanted GaAs and InP wafers. Measurements show that electrical activation is greater for p-type than for n-type dopants in GaAs, while in InP, the opposite is observed. A simple Fermi-level pinning model is presented to explain not only the electrical properties we have measured, but also those observed by other workers. We have fabricated GaAs and InP solar cells with junctions formed by ion implantation followed by laser annealing. The GaAs cells have much better conversion efficiencies than the InP cells, and this difference can be explained in terms of the model.

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