The regular-oscillation state in a ruby laser

1970 ◽  
Vol 13 (5) ◽  
pp. 1529-1531
Author(s):  
T. I. Tiunova ◽  
A. M. Ratner
Keyword(s):  
Ruby Laser ◽  
Regular Oscillation

Q-switched ruby laser treatment of congenital nevi

1995 ◽  
Vol 131 (5) ◽  
pp. 621-623 ◽  
Author(s):  
D. J. Goldberg
Keyword(s):  
Laser Treatment ◽  
Ruby Laser

Lentigo Maligna Partially Treated with Ruby Laser

2007 ◽  
Vol 69 (5) ◽  
pp. 511-514 ◽  
Author(s):  
Takako KURIHARA ◽  
Yoshihide HONDA
Keyword(s):  
Ruby Laser ◽  
Lentigo Maligna

Pulsed ruby laser accelerated degradation of amorphous hydrogenated silicon

1993 ◽  
Vol 164-166 ◽  
pp. 235-238 ◽  
Author(s):  
O. Klíma ◽  
O. Štika ◽  
Ho Tha Ha ◽  
S. Fouad Abdel Hamied ◽  
J. Stuchlík ◽  
...  
Keyword(s):  
Ruby Laser ◽  
Hydrogenated Silicon ◽  
Accelerated Degradation ◽  
Amorphous Hydrogenated Silicon

Raman-Spektren von SnJ4, GeJ4, TiBr4 und TiJ4 in flüssiger und kristalliner Phase / Raman Spectra of SnJ4, GeJ4, TiBr4, and TiJ4 in the Liquid and Crystalline Phase

1970 ◽  
Vol 25 (12) ◽  
pp. 1374-1381 ◽  
Author(s):  
W. Kiefer ◽  
H. W. Schrötter
Keyword(s):  
Raman Spectra ◽  
Ruby Laser ◽  
Detection System ◽  
Point Group ◽  
Visible Region ◽  
Group Symmetry ◽  
Pure Liquid ◽  
Electronic Detection ◽  
Polarization Studies ◽  
First Time

The Raman spectra of four molecules absorbing in the visible region (SnJ4, GeJ4, TiBr4, and TiJ4) are presented. They were excited with a quasi-continuous ruby laser and recorded with a special electronic detection system. Except for TiJ4, complete Raman spectra of crystal powder pellets could be obtained for the first time. The assignment reported by previous authors was confirmed by accurate polarization studies of solutions or pure liquid. The assignment is also in the solid state possible on the basis of Td point group symmetry. The fundamental vibrations of TiJ4 in solutions are: ν1 (A1) =162, ν2 (E) =51, ν3 (F2) =319 and ν4 (F2) Y = 67 cm-1

SINGLE TRANSVERSE MODE PULSED RUBY LASER

1967 ◽  
Vol 11 (8) ◽  
pp. 261-263 ◽  
Author(s):  
G. Soncini ◽  
O. Svelto
Keyword(s):  
Ruby Laser ◽  
Transverse Mode

Pulsed Laser Annealing of R.F.Sputtered Amorphous Si : H.Films, Doped with Arsenic

1981 ◽  
Vol 4 ◽  
Author(s):  
E. Fogarassy ◽  
R. Stuck ◽  
M. Toulemonde ◽  
P. Siffert ◽  
J.F. Morhange ◽  
...  
Keyword(s):  
Ruby Laser ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Amorphous Layer ◽  
High Concentration ◽  
Topographic Analysis ◽  
Pulsed Laser Annealing ◽  
Residual Hydrogen ◽  
Silicon Target ◽  
Amorphous Si

Arsenic doped amorphous silicon layers have been deposited on silicon single crystals by R.F.cathodic sputtering of a silicon target in a reactive argon-hydrogen mixture, and annealed with a Q-switched Ruby laser. Topographic analysis of the irradiated layers has shown the formation of a crater, due to an evaporation effect of material which could be related to the presence of a high concentration of Ar in the amorphous layer. RBS and Raman Spectroscopy showed that the remaining layer is not recrystallised probably due to inhibition by the residual hydrogen. However, it was found that arsenic diffuses into the monocrystalline substrate by laser induced diffusion of dopant from the surface solid source, leading to the formation of good quality P-N junctions.

Sign in / Sign up

Export Citation Format

Share Document