Pulsed Laser Annealing of R.F.Sputtered Amorphous Si : H.Films, Doped with Arsenic

Arsenic doped amorphous silicon layers have been deposited on silicon single crystals by R.F.cathodic sputtering of a silicon target in a reactive argon-hydrogen mixture, and annealed with a Q-switched Ruby laser. Topographic analysis of the irradiated layers has shown the formation of a crater, due to an evaporation effect of material which could be related to the presence of a high concentration of Ar in the amorphous layer. RBS and Raman Spectroscopy showed that the remaining layer is not recrystallised probably due to inhibition by the residual hydrogen. However, it was found that arsenic diffuses into the monocrystalline substrate by laser induced diffusion of dopant from the surface solid source, leading to the formation of good quality P-N junctions.

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Pulsed Laser Annealing of Aluminum

MRS Proceedings ◽

10.1557/proc-1-567 ◽

1980 ◽

Vol 1 ◽

Cited By ~ 1

Author(s):

W. R. Wampler ◽

D. M. Follstaedt ◽

P. S. Peercy

Keyword(s):

Single Crystal ◽

Laser Irradiation ◽

Reasonable Agreement ◽

Ruby Laser ◽

Laser Annealing ◽

Ion Beam ◽

Pulsed Laser ◽

Nucleation Time ◽

Pulsed Laser Annealing ◽

Beam Analysis

ABSTRACTPulsed ruby laser irradiation of unimplanted single crystal and implanted polycrystalline Al has been studied with ion beam analysis and TEM. The results show that Al is melted to a depth of ∼ 0.9 μm with a 4.2 J/cm2 , 15 nsec pulse, and that vacancies are quenched into Al during resolidification. Diffusion of Zn in liquid Al is observed, and a melt time of ∼ 65 nsec is estimated for a 3.8 J/cm2, 30 nsec pulse. The observations are in reasonable agreement with calculations of sample temperature and melt times. We observe no precipitation of AlSb in liquid Al for Sbimplanted Al, and conclude that the nucleation time satisfies 50 nsec ≲ tnuc ≲ 200 nsec. We find no evidence for amorphous Al after irradiation of single crystal Al with energies ≳ 1.5 J/cm2.

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Multiple Layer Sputter Deposition and Laser Annealing of Silicon Films

MRS Proceedings ◽

10.1557/proc-23-241 ◽

1983 ◽

Vol 23 ◽

Author(s):

W. W. Anderson ◽

H. F. Mac Millan ◽

J. S. Katzeff ◽

M. Lopez

Keyword(s):

Ion Implantation ◽

Laser Annealing ◽

Pulsed Laser ◽

Sputter Deposition ◽

Silicon Substrates ◽

Chemical Cleaning ◽

Pulsed Laser Annealing ◽

Magnetron Sputter Deposition ◽

Magnetron Sputter ◽

Amorphous Si

ABSTRACTThe formation of single crystal multiple layers on silicon substrates with thicknesses in excess of 1 μm has been demonstrated to be a viable process. Film build-up is via repetitions of the steps (1) pre-deposition chemical cleaning of wafer, (2) magnetron sputter deposition of 0.3 pm thick amorphous Si, (3) interfacial mixing via 190 keV implantation of Si, and (4) film epitaxial crystallization via pulsed laser annealing. Doping has been demonstrated by both (1) P ion implantation and (2) P incorporation from PH3; included in the sputter gas ambient.

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Crystallization of amorphous Si films by pulsed laser annealing and their structural characteristics

Semiconductor Science and Technology ◽

10.1088/0268-1242/19/6/018 ◽

2004 ◽

Vol 19 (6) ◽

pp. 759-763 ◽

Cited By ~ 15

Author(s):

Y C Peng ◽

G S Fu ◽

W Yu ◽

S Q Li ◽

Y L Wang

Keyword(s):

Laser Annealing ◽

Structural Characteristics ◽

Pulsed Laser ◽

Pulsed Laser Annealing ◽

Amorphous Si ◽

Si Films

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Faster Quenching by Silicon Pulsed Laser Annealing Under Water

MRS Proceedings ◽

10.1557/proc-74-129 ◽

1986 ◽

Vol 74 ◽

Cited By ~ 1

Author(s):

A. Polman ◽

S. Roorda ◽

S. B. Ogale ◽

F. W. Saris

Keyword(s):

Laser Pulse ◽

Laser Annealing ◽

Crystalline Silicon ◽

Diffusion Theory ◽

Pulsed Laser ◽

Silicon Layer ◽

Water Layer ◽

Amorphous Layer ◽

Pulsed Laser Annealing ◽

Novel Method

AbstractA novel method of pulsed laser processing of ion-implanted silicon is presented, in which samples are irradiated in water ambient. The water layer in contact with the silicon during irradiationh as a considerable influence on melting and solidificationd ynamics. Still, perfect epitaxy of a thin amorphous layer can be obtained using this method.For epitaxy to occur on a sample irradiated under water, 40 % more absorbed energy is necessary than for a sample irradiated in air. This indicates the occurrence of a considerable heat-flow from the silicon into the water layer during the laser pulse. From impurity redistribution after irradiation it is found that by processing a sample under water liquid-phase diffusion is reduced. Diffusion theory arguments indicate that this can be due to a reduction in total melt duration by about afactor 2–3. This can be due to faster cooling of the liquid silicon layer after the laser pulse whereas the melt-in time might be influenced as well. As a consequence, shallower impurity profiles can be obtained in crystalline silicon. No oxygen incorporation is detected and the surface morphology is not disturbed using this new process.

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