Widely tunable electrooptic pulse-pattern generation and its application to on-wafer large-signal characterization of ultra high-speed electronic devices

1996 ◽  
Vol 28 (7) ◽  
pp. 991-1005 ◽  
Author(s):  
T. Otsuji ◽  
T. Nagatsuma ◽  
K. Kato ◽  
M. Yoneyama
Keyword(s):  
High Speed ◽  
Electronic Devices ◽  
Pattern Generation ◽  
Large Signal ◽  
Ultra High Speed ◽  
Signal Characterization

Large-Signal Characterization of PMN-PT-Ba (90/10/3)

1997 ◽  
Author(s):  
Robert S. Janus ◽  
Mark B. Moffett ◽  
James M. Powers
Keyword(s):  
Large Signal ◽  
Signal Characterization

scholarly journals RF Small and large signal characterization of a 3D integrated GaN/RF-SOI SPST switch

2021 ◽  
pp. 1-6
Author(s):  
Frédéric Drillet ◽  
Jérôme Loraine ◽  
Hassan Saleh ◽  
Imene Lahbib ◽  
Brice Grandchamp ◽  
...  
Keyword(s):  
Power Level ◽  
Coplanar Waveguide ◽  
Average Power ◽  
Input Power ◽  
Capacitive Coupling ◽  
Rf Switch ◽  
Large Signal ◽  
Waveguide Transmission ◽  
Signal Characterization

Abstract This paper presents the radio frequency (RF) measurements of an SPST switch realized in gallium nitride (GaN)/RF-SOI technology compared to its GaN/silicon (Si) equivalent. The samples are built with an innovative 3D heterogeneous integration technique. The RF switch transistors are GaN-based and the substrate is RF-SOI. The insertion loss obtained is below 0.4 dB up to 30 GHz while being 1 dB lower than its GaN/Si equivalent. This difference comes from the vertical capacitive coupling reduction of the transistor to the substrate. This reduction is estimated to 59% based on a RC network model fitted to S-parameters measurements. In large signal, the linearity study of the substrate through coplanar waveguide transmission line characterization shows the reduction of the average power level of H2 and H3 of 30 dB up to 38 dBm of input power. The large signal characterization of the SPST shows no compression up to 38 dBm and the H2 and H3 rejection levels at 38 dBm are respectively, 68 and 75 dBc.

Characterization of ultra-high-speed pseudomorphic AlGaAs/InGaAs (on GaAs) MODFETs

1989 ◽  
Vol 36 (10) ◽  
pp. 2243-2248 ◽  
Author(s):  
L.D. Nguyen ◽  
P.J. Tasker ◽  
D.C. Radulescu ◽  
L.F. Eastman
Keyword(s):  
High Speed ◽  
Ultra High Speed

Accurate large-signal characterization of LDMOSFET transistor in package

2011 ◽  
Vol 53 (3) ◽  
pp. 575-579 ◽  
Author(s):  
Mohammed Tamoum ◽  
Rachid Allam ◽  
Farid Djahli
Keyword(s):  
Large Signal ◽  
Signal Characterization

Vector Signal Characterization of High-Speed Optical Components by Use of Linear Optical Sampling With Milliradian Resolution

2008 ◽  
Vol 20 (23) ◽  
pp. 2007-2009 ◽  
Author(s):  
P. A. Williams ◽  
T. Dennis ◽  
I. Coddington ◽  
W. C. Swann ◽  
N. R. Newbury
Keyword(s):  
High Speed ◽  
Optical Components ◽  
Optical Sampling ◽  
Linear Optical ◽  
Signal Characterization ◽  
Vector Signal
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