scholarly journals RF Small and large signal characterization of a 3D integrated GaN/RF-SOI SPST switch

2021 ◽  
pp. 1-6
Author(s):  
Frédéric Drillet ◽  
Jérôme Loraine ◽  
Hassan Saleh ◽  
Imene Lahbib ◽  
Brice Grandchamp ◽  
...  
Keyword(s):  
Power Level ◽  
Coplanar Waveguide ◽  
Average Power ◽  
Input Power ◽  
Capacitive Coupling ◽  
Rf Switch ◽  
Large Signal ◽  
Waveguide Transmission ◽  
Signal Characterization

Abstract This paper presents the radio frequency (RF) measurements of an SPST switch realized in gallium nitride (GaN)/RF-SOI technology compared to its GaN/silicon (Si) equivalent. The samples are built with an innovative 3D heterogeneous integration technique. The RF switch transistors are GaN-based and the substrate is RF-SOI. The insertion loss obtained is below 0.4 dB up to 30 GHz while being 1 dB lower than its GaN/Si equivalent. This difference comes from the vertical capacitive coupling reduction of the transistor to the substrate. This reduction is estimated to 59% based on a RC network model fitted to S-parameters measurements. In large signal, the linearity study of the substrate through coplanar waveguide transmission line characterization shows the reduction of the average power level of H2 and H3 of 30 dB up to 38 dBm of input power. The large signal characterization of the SPST shows no compression up to 38 dBm and the H2 and H3 rejection levels at 38 dBm are respectively, 68 and 75 dBc.

Large-Signal Characterization of PMN-PT-Ba (90/10/3)

1997 ◽  
Author(s):  
Robert S. Janus ◽  
Mark B. Moffett ◽  
James M. Powers
Keyword(s):  
Large Signal ◽  
Signal Characterization

Accurate large-signal characterization of LDMOSFET transistor in package

2011 ◽  
Vol 53 (3) ◽  
pp. 575-579 ◽  
Author(s):  
Mohammed Tamoum ◽  
Rachid Allam ◽  
Farid Djahli
Keyword(s):  
Large Signal ◽  
Signal Characterization

scholarly journals GaN-based single-chip frontend for next-generation X-band AESA systems

2018 ◽  
Vol 10 (5-6) ◽  
pp. 660-665 ◽  
Author(s):  
Patrick Schuh ◽  
Hardy Sledzik ◽  
Rolf Reber
Keyword(s):  
Generation X ◽  
Noise Figure ◽  
Power Level ◽  
Input Power ◽  
Low Noise ◽  
Next Generation ◽  
Frequency Range ◽  
Single Chip ◽  
Large Signal ◽  
Integration Density

AbstractA next generation of active electronically scanned array (AESA) antennas will be challenged with the need for lower size, weight, power, and cost. This leads to enhanced demands especially with regard to the integration density of the radio frequency-part inside aT/Rmodule. The semiconductor material GaN has proven its capacity for high-power amplifiers (HPA), robust receive components as well as switch components for separation of transmit and receive mode. This paper will describe the design and measurement results of a GaN-based single-chipT/Rmodule frontend (HPA, low noise anplifier, and single-pole double-throw (SPDT)) using UMS GH25 technology and covering the frequency range from 8 GHz to 12 GHz. The key performance parameters of the frontend are 13 W minimum transmit (TX) output power over the whole frequency range with peak power up to 17 W. The frontend in receive (RX) mode has a noise figure below 3.2 dB over the whole frequency range, and can survive more than 5 W input power. The large signal insertion loss of the used SPDT is below 0.9 dB at 43 dBm input power level.

scholarly journals Design of a 900 MHz Dual-Mode SWIPT for Low-Power IoT Devices

Sensors ◽  
2019 ◽  
Vol 19 (21) ◽  
pp. 4676 ◽  
Author(s):  
Hamed Abbasizadeh ◽  
Sang Yun Kim ◽  
Behnam Samadpoor Rikan ◽  
Arash Hejazi ◽  
Danial Khan ◽  
...  
Keyword(s):  
Power Efficiency ◽  
Power Level ◽  
Average Power ◽  
Input Power ◽  
Circuit Board ◽  
Power Splitting ◽  
Dual Mode ◽  
Shift Keying ◽  
Rf Energy ◽  
Iot Devices

This paper presents a duty cycle-based, dual-mode simultaneous wireless information and power transceiver (SWIPT) for Internet of Things (IoT) devices in which a sensor node monitors the received power and adaptively controls the single-tone or multitone communication mode. An adaptive power-splitting (PS) ratio control scheme distributes the received radio frequency (RF) energy between the energy harvesting (EH) path and the information decoding (ID) path. The proposed SWIPT enables the self-powering of an ID transceiver above 20 dBm input power, leading to a battery-free network. The optimized PS ratio of 0.44 enables it to provide sufficient harvested energy for self-powering and energy-neutral operation of the ID transceiver. The ID transceiver can demodulate the amplitude-shift keying (ASK) and the binary phase-shift keying (BPSK) signals. Moreover, for low-input power level, a peak-to-average power ratio (PAPR) scheme based on multitone is also proposed for demodulation of the information-carrying RF signals. Due to the limited power, information is transmitted in uplink by backscatter modulation instead of RF signaling. To validate our proposed SWIPT architecture, a SWIPT printed circuit board (PCB) was designed with a multitone SWIPT board at 900 MHz. The demodulation of multitone by PAPR was verified separately on the PCB. Results showed the measured sensitivity of the SWIPT to be −7 dBm, and the measured peak power efficiency of the RF energy harvester was 69% at 20 dBm input power level. The power consumption of the injection-locked oscillator (ILO)-based phase detection path was 13.6 mW, and it could be supplied from the EH path when the input power level was high. The ID path could demodulate 4-ASK- and BPSK-modulated signals at the same time, thus receiving 3 bits from the demodulation process. Maximum data rate of 4 Mbps was achieved in the measurement.

Large signal characterization of hard PZT materials

2005 ◽  
Vol 25 (12) ◽  
pp. 2411-2414 ◽  
Author(s):  
E. Hennig ◽  
E. Wehrsdorfer ◽  
S. Lürtzing ◽  
B. Kolle ◽  
W. Plötner
Keyword(s):  
Large Signal ◽  
Signal Characterization
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