Semiconducting behaviour and pressure dependence of electrical resistivity in tin monoselenide single crystals grown by a modified direct vapour transport technique

1994 ◽  
Vol 5 (5) ◽  
pp. 287-290 ◽  
Author(s):  
Ajay Agarwal ◽  
S. H. Chaki ◽  
S. G. Patel ◽  
D. Lakshminarayana
Keyword(s):  
Electrical Resistivity ◽  
Single Crystals ◽  
Pressure Dependence ◽  
Vapour Transport ◽  
Tin Monoselenide ◽  
Transport Technique

Excitonic emission and absorption resonances in V0.25W0.75Se2 single crystals grown by direct vapour transport technique

2016 ◽  
Vol 441 ◽  
pp. 101-106 ◽  
Author(s):  
G.K. Solanki ◽  
Pratik Pataniya ◽  
C.K. Sumesh ◽  
K.D. Patel ◽  
V.M. Pathak
Keyword(s):  
Single Crystals ◽  
Vapour Transport ◽  
Excitonic Emission ◽  
Transport Technique

Thermal analysis of direct vapour transport technique grown tin selenide single crystals

2020 ◽  
Vol 689 ◽  
pp. 178614 ◽  
Author(s):  
Shivam Patel ◽  
S.H. Chaki ◽  
P.C. Vinodkumar
Keyword(s):  
Thermal Analysis ◽  
Single Crystals ◽  
Vapour Transport ◽  
Tin Selenide ◽  
Transport Technique

Growth and Electrical Characterizations of Sn0.3Se0.7 Crystals Grown by Direct Vapour Transport Technique

2016 ◽  
Vol 1141 ◽  
pp. 103-106 ◽  
Author(s):  
G.K. Solanki ◽  
Mohit Tannarana ◽  
Pratik Pataniya ◽  
K.D. Patel
Keyword(s):  
Electrical Transport ◽  
Arrhenius Equation ◽  
Layered Materials ◽  
Vapour Transport ◽  
Orthorhombic Structure ◽  
Electrical Measurements ◽  
Time Of Presentation ◽  
Electrical Characterizations ◽  
Tin Monoselenide ◽  
Transport Technique

Tin monoselenide (Sn0.3Se0.7) crystals have been grown by direct vapour transport technique. These crystals were found exhibit orthorhombic structure with space group D2h16 (Pcmn). The electrical measurements such as thermoelectric power and resistivity were carried out at high temperature on these as-grown crystals. The parameters like See back co-efficient, Fermi energy and scattering co-efficient were calculated from experimental data of TEP. The primary studies show the semiconducting behaviour of these crystals. Activation energy was also calculated by employing Arrhenius equation for grown samples. These layered materials, due to different kinds of interactions exhibits anisotropic crystalline structure and this lead to an anisotropy in electrical transport. Anisotropy seems to be decrease with temperature for all grown crystals. A detailed study about electrical transport and anisotropy in all such crystals will be presented at the time of presentation.

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