SnSe/Cu2SnSe3 Heterojunction Structure with High Initial Coulombic Efficiency for Lithium-Ion Battery Anodes

Due to high theoretical specific capacity and abundant reserves, tin selenide-based materials have received tremendous attentions in the fields of lithium-ion batteries. Nevertheless, the huge volume changes during insertion/de-intercalation processes deteriorate the Coulombic Efficiency greatly. In order to solve it, the researchers have made great efforts by means of controlling nanoparticles granularity, carbon coating, ion doping et al. In this study, SnSe/Cu2SnSe3 heterojunction nanocomposites were synthesized by solvo-thermal method. The resulting SnSe/Cu2SnSe3 is a three-dimensional flower-like hierarchical nanostructure composed of nanoscale thin lamellae of a thickness of 8-12 nm. The unique nanostructure could shorten the diffusion path of lithium ions and expedite charge transfer, and therefore enhance the reaction kinetics. Compared with SnSe, the initial Coulombic efficiency of SnSe/Cu2SnSe3 is raised from 59% to 90% as the anode material of lithium-ion batteries.

Photosensitive Schottky Barrier Diode Based on Cu/p-SnSe Thin Film Fabricated by Thermal Evaporation

Tin Selenide (SnSe), a group IV-VI compound semiconductor material is used to fabricate various solid state devices such as memory switching devices, P-N junction diodes, Schottky barrier diodes, etc. In...

Solution phase growth and analysis of super-thin zigzag tin selenide nanoribbons

Tin selenide (SnSe), a highly promising layered material, has been garnering particular interest in recent times due to its significant promise for future energy devices. Herein we report a simple solution phase approach for growing highly crystalline layered SnSe nanoribbons. Polyvinylpyrrolidone (PVP) was used as a templating agent to selectively passivates the (100) and (001) facets of the SnSe nanoribbons resulting in the unique growth of nanoribbons along their b-axis with a defined zigzag edge state along the sidewalls. The SnSe nanoribbons are few layers thick (~ 20 layers), with mean widths of ~40 nm, and achievable length of > 1 m. Nanoribbons could be produced in relatively high quantities (>150 mg) in a single batch experiment. The PVP coating also offer some resistance to oxidation, with removal of the PVP seen to lead to the formation a SnSe/SnOx core shell structure. The use of non-toxic PVP to replace toxic amines that are typically employed for other 1D forms of SnSe is a significant advantage for sustainable and environmentally friendly applications. Heat transport properties of the SnSe nanoribbons, derived from power dependent Raman spectroscopy, demonstrate the potential of SnSe nanoribbons as thermoelectric material.

An Overview of the Strategies for Tin Selenide Advancement in Thermoelectric Application

Chalcogenide, tin selenide-based thermoelectric (TE) materials are Earth-abundant, non-toxic, and are proven to be highly stable intrinsically with ultralow thermal conductivity. This work presented an updated review regarding the extraordinary performance of tin selenide in TE applications, focusing on the crystal structures and their commonly used fabrication methods. Besides, various optimization strategies were recorded to improve the performance of tin selenide as a mid-temperature TE material. The analyses and reviews over the methodologies showed a noticeable improvement in the electrical conductivity and Seebeck coefficient, with a noticeable decrement in the thermal conductivity, thereby enhancing the tin selenide figure of merit value. The applications of SnSe in the TE fields such as microgenerators, and flexible and wearable devices are also discussed. In the future, research in low-dimensional TE materials focusing on nanostructures and nanocomposites can be conducted with the advancements in material science technology as well as microtechnology and nanotechnology.

Tuning the Carrier Type and Density of Monolayer Tin Selenide via Organic Molecular Doping

Utilizing first-principles calculations, charge transfer doping process of single layer tin selenide (SL-SnSe) via the surface adsorption of various organic molecules was investigated. Effective p-type SnSe, with carrier concentration exceeding 3.59×1013 cm-2, was obtained upon adsorption of tetracyanoquinodimethane (TCNQ) or 2,3,5,6-tetrafluoro-7,7,8,8-tetracyano-quinodimethane (F4TCNQ) on SL-SnSe due to their lowest unoccupied molecular orbital (LUMO) acting as shallow acceptor states. While we could not obtain effective n-type SnSe through adsorption of tetrathiafulvalene (TTF) or 1,4,5,8-tetrathianaphthalene (TTN) on pristine SnSe due to their highest occupied molecular orbitals (HOMO) being far from the conduction band edge of SnSe, this disadvantageous situation can be amended by the introduction of an external electric field perpendicular to the monolayer surface. It is found that Snvac will facilitate charge transfer from TTF to SnSe through introducing an unoccupied gap state just above the HOMO of TTF, thereby partially compensating for the p-type doping effect of Snvac. Our results show that both effective p-type and n-type SnSe can be obtained and tuned by charge transfer doping, which is necessary to promote its applications in nanoelectronics, thermoelectrics and optoelectronics.