electrical characterizations
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Research ◽  
2022 ◽  
Vol 2022 ◽  
pp. 1-10
Author(s):  
Nerio Andrés Montoya ◽  
Valeria Criscuolo ◽  
Andrea Lo Presti ◽  
Raffaele Vecchione ◽  
Christian Falconi

Four-wire measurements have been introduced by Lord Kelvin in 1861 and have since become the standard technique for characterizing small resistances and impedances. However, high-density 4-wire measurements are generally complex, time-consuming, and inefficient because of constraints on interconnects, pads, external wires, and mechanical contacts, thus reducing reproducibility, statistical significance, and throughput. Here, we introduce, systematically design, analyze, and experimentally validate zero interconnect networks interfaced to external instrumentation by couples of twin wire. 3D-printed holders with magnets, interconnects, nonadhesive layers, and spacers can effortlessly establish excellent electrical connections with tunable or minimum contact forces and enable accurate measurements even for delicate devices, such as thin metals on soft polymers. As an example, we measured all the resistances of a twin-wire 29-resistor network made of silver-nanoparticle ink printed on polyimide, paper, or photo paper, including during sintering or temperature calibration, resulting in an unprecedentedly easy and accurate characterization of both resistivity and its temperature coefficient. The theoretical framework and experimental strategies reported here represent a breakthrough toward zero interconnect, simple, and efficient high-density 4-wire characterizations, can be generalized to other 4-wire measurements (impedances, sensors) and can open the way to more statistically meaningful and reproducible analyses of materials, high-throughput measurements, and minimally invasive characterizations of biomaterials.


Author(s):  
Takato Nakanuma ◽  
Yu Iwakata ◽  
Arisa Watanabe ◽  
Takuji Hosoi ◽  
Takuma Kobayashi ◽  
...  

Abstract Nitridation of SiO2/4H-SiC(1120) interfaces with post-oxidation annealing in an NO ambient (NO-POA) and its impact on the electrical properties were investigated. Sub-nm-resolution nitrogen depth profiling at the interfaces was conducted by using a scanning x-ray photoelectron spectroscopy microprobe. The results showed that nitrogen atoms were incorporated just at the interface and that interface nitridation proceeded much faster than at SiO2/SiC(0001) interfaces, resulting in a 2.3 times higher nitrogen concentration. Electrical characterizations of metal-oxide-semiconductor capacitors were conducted through capacitance-voltage (C–V) measurements in the dark and under illumination with ultraviolet light to evaluate the electrical defects near the conduction and valence band edges and those causing hysteresis and shifting of the C–V curves. While all of these defects were passivated with the progress of the interface nitridation, excessive nitridation resulted in degradation of the MOS capacitors. The optimal conditions for NO-POA are discussed on the basis of these experimental findings.


Author(s):  
Hidetoshi Mizobata ◽  
Mikito Nozaki ◽  
Takuma Kobayashi ◽  
Takuji Hosoi ◽  
Takayoshi Shimura ◽  
...  

Abstract A recent study has shown that anomalous positive fixed charge is generated at SiO2/GaN interfaces by forming gas annealing (FGA). Here, we conducted systematic physical and electrical characterizations of GaN-based metal-oxide-semiconductor (MOS) structures to gain insight into the charge generation mechanism and to design optimal interface structures. A distinct correlation between the amount of FGA-induced fixed charge and interface oxide growth indicated the physical origins of the fixed charge to be defect formation driven by reduction of the Ga-oxide (GaOx) interlayer. This finding implies that, although post-deposition annealing in oxygen compensates for oxygen deficiencies and FGA passivates defect in GaN MOS structures, excessive interlayer GaOx growth leads to instability in the subsequent FGA treatment. On the basis of this knowledge, SiO2/GaOx/GaN MOS devices with improved electrical properties were fabricated by precisely controlling the interfacial oxide growth while taking advantage of defect passivation with FGA.


Micromachines ◽  
2021 ◽  
Vol 12 (11) ◽  
pp. 1355
Author(s):  
Vignesh Gunasekaran ◽  
Soffian Yjjou ◽  
Eve Hennequin ◽  
Thierry Camps ◽  
Nicolas Mauran ◽  
...  

The development of “portable, low cost and low consumption” gas microsensors is one of the strong needs for embedded portable devices in many fields such as public domain. In this paper, a new approach is presented on making, on the same chip, a network of head-to-tail facing PN junctions in order to miniaturize the sensor network and considerably reduce the required power for heating each cell independently. This paper is about recognizing a device that integrates both sensing and self-heating. This first study aims to evaluate the possibilities of this type of diode network for use as a gas sensor. The first part concerns the description of the technological process that is based on a doped polysilicon wafer in which a thin layer of metal oxide (a gallium-doped zinc oxide in our case) is deposited by RF sputtering. An electrical model will be proposed to explain the operation and advantage of this approach. We will show the two types of tests that have been carried out (static and dynamic) as well as the first encouraging results of these electrical characterizations under variable atmospheres.


2021 ◽  
Vol 119 (14) ◽  
pp. 142103
Author(s):  
Srinivas Gandrothula ◽  
Takeshi Kamikawa ◽  
Pavel Shapturenka ◽  
Ryan Anderson ◽  
Matthew Wong ◽  
...  

2021 ◽  
pp. 114217
Author(s):  
Joris Jourdon ◽  
Sandrine Lhostis ◽  
Stéphane Moreau ◽  
Patrick Lamontagne ◽  
Hélène Frémont

Photonics ◽  
2021 ◽  
Vol 8 (9) ◽  
pp. 385
Author(s):  
Cheng Ma ◽  
Meilin Wu ◽  
Wennan Wang ◽  
Yaqiong Jia ◽  
Wei Shi

In this paper, a three-layer GaAs photoconductive semiconductor switch (GaAs PCSS) is designed to withstand high voltage from 20 to 35 kV. The maximum avalanche gain and minimum on-state resistance of GaAs PCSS are 1385 and 0.58 Ω, respectively, which are the highest values reported to date. Finally, the influence of the bias voltage on the avalanche stability is analyzed. The stability of the GaAs PCSS is evaluated and calculated. The results show that the jitter values at the bias voltages of 30 kV and 35 kV are 164.3 ps and 106.9 ps, respectively. This work provides guidance for the design of semiconductor switches with high voltage and high gain.


2021 ◽  
Author(s):  
S. Gouadria ◽  
K. Omri

Abstract The sol-gel method was chosen to synthesize C-SiO2/Ni nanocomposites, silica nanofillers were incorporated into a carbon based on resorcinol-formaldehyde (RF), doped with 5% nickel. During preparation process, they were subjected to a heat treatment of different pyrolysis temperatures and under an inert atmosphere for 2 h. The X- ray diffractogram presented by XRD of the samples treated at low temperatures, indicates the presence of characteristic lines of metallic nickel. FTIR analysis shows the presence of a main band located at about 1050 cm-1, which corresponds to the vibrations of Si-O-Si. From electrical characterizations, the C-SiO2-Ni5%-650 sample has a negative differential resistance‎ behavior (NDR) at low measurement temperatures. According to the I-V characterization, the C-SiO2-Ni5%-625 °C nanocomposite reveals the NDR behavior at room temperature. The conduction mechanism was fitted by two models: the hopping conduction model for the nanocomposite, treated at 650 °C, and the small polaron model for the composite treated at 675 °C.


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