Liquid/solid interface profile of melt grown oxide crystals I. Czochralski growth

1974 ◽  
Vol 24 (10) ◽  
pp. 1091-1096 ◽  
Author(s):  
B. Perner ◽  
J. Kvapil ◽  
Jos Kvapil
Keyword(s):  
Czochralski Growth ◽  
Solid Interface ◽  
Oxide Crystals ◽  
Interface Profile

Liquid/solid interface profile of melt grown oxide crystals II. Crystal quality

1974 ◽  
Vol 24 (12) ◽  
pp. 1345-1350 ◽  
Author(s):  
J. Kvapil ◽  
B. Perner ◽  
Jos Kvapil
Keyword(s):  
Crystal Quality ◽  
Solid Interface ◽  
Oxide Crystals ◽  
Interface Profile

Czochralski Growth of Oxide Laser Crystals

1993 ◽  
Vol 329 ◽  
Author(s):  
Milan R. Koka
Keyword(s):  
Crystal Growth ◽  
Czochralski Growth ◽  
Solid State Lasers ◽  
Optically Pumped ◽  
Inorganic Oxides ◽  
Melting Temperatures ◽  
Individual Crystal ◽  
Large Size ◽  
Laser Crystals ◽  
Oxide Crystals

The most widely used active elements of optically pumped solid state lasers are crystals of inorganic oxides. Such oxide materials crystallasing in either garnet or corundum structures are prepared on industrial scale by the pulling technique known as Czochralski Crystal Growth. The description of the present state-of-the-art in Czochralski growth is described along with critical variables involved in growth of large size, high quality oxide crystals. The description of crystal growth of ruby, yttrium aluminum garnets, and titanium sapphire is presented. The effects of compositions, ambient atmospheres, crystal growth variables, and environmental conditions on individual crystal types are described. Suitability of the Czochralski technique for crystal growth of different oxides is discussed with emphasis on material properties such as phase diagram implication (congruency of melting), melting temperatures, crucible materials, effects of doping ions, and high temperature melt chemistry.

Application of Spectral Analysis for Crystal Shape Improvement during Czochralski Growth of Oxide Crystals

1998 ◽  
Vol 33 (1) ◽  
pp. 65-70 ◽  
Author(s):  
V. V. Kochurikhin ◽  
K. Shimamura ◽  
B. M. Epelbaum ◽  
H. Takeda ◽  
T. Fukuda
Keyword(s):  
Spectral Analysis ◽  
Crystal Shape ◽  
Czochralski Growth ◽  
Oxide Crystals

Numerical simulation of the Czochralski growth process of oxide crystals with a relatively thin optical thickness

2004 ◽  
Vol 47 (25) ◽  
pp. 5501-5509 ◽  
Author(s):  
Akira Hayashi ◽  
Masaki Kobayashi ◽  
Chengjun Jing ◽  
Takao Tsukada ◽  
Mitsunori Hozawa
Keyword(s):  
Numerical Simulation ◽  
Optical Thickness ◽  
Growth Process ◽  
Czochralski Growth ◽  
Oxide Crystals

TEM characterization of silicon epitaxial layer grown on Si-TaS2, eutectic composites

1991 ◽  
Vol 49 ◽  
pp. 802-803
Author(s):  
C.M. Sung ◽  
M. Levinson ◽  
M. Tabasky ◽  
K. Ostreicher ◽  
B.M. Ditchek
Keyword(s):  
Substrate Surface ◽  
Bulk Sample ◽  
Surface Cleaning ◽  
Native Oxide ◽  
Czochralski Growth ◽  
Ion Milling ◽  
Cross Sectional ◽  
Cleaning Methods ◽  
Field Emission Cathodes

Directionally solidified Si/TaSi2 eutectic composites for the development of electronic devices (e.g. photodiodes and field-emission cathodes) were made using a Czochralski growth technique. High quality epitaxial growth of silicon on the eutectic composite substrates requires a clean silicon substrate surface prior to the growth process. Hence a preepitaxial surface cleaning step is highly desirable. The purpose of this paper is to investigate the effect of surface cleaning methods on the epilayer/substrate interface and the characterization of silicon epilayers grown on Si/TaSi2 substrates by TEM.Wafers were cut normal to the <111> growth axis of the silicon matrix from an approximately 1 cm diameter Si/TaSi2 composite boule. Four pre-treatments were employed to remove native oxide and other contaminants: 1) No treatment, 2) HF only; 3) HC1 only; and 4) both HF and HCl. The cross-sectional specimens for TEM study were prepared by cutting the bulk sample into sheets perpendicular to the TaSi2 fiber axes. The material was then prepared in the usual manner to produce samples having a thickness of 10μm. The final step was ion milling in Ar+ until breakthrough occurred. The TEM samples were then analyzed at 120 keV using the Philips EM400T.

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