Modelling InSb Czochralski Growth

A model of Czrochralski crystal growth is presented that reduces the issue of finding the temperature distribution as a Stefan problem. From the temperature distribution the corresponding distribution of thermal stress inside the growing crystal can be computed. This work will allow the rapid simulation of a variety of crystal growing strategies which would be prohibitively expensive in an experimental setting.

Czochralski growth of mixed cubic sesquioxide crystals in the ternary system Lu2O3–Sc2O3–Y2O3

Cubic rare-earth sesquioxide crystals are strongly demanded host materials for high power lasers, but due to their high melting points investigations on their thermodynamics and the growth of large-size crystals of high optical quality remain a challenge. Detailed thermal investigations of the ternary system Lu2O3–Sc2O3–Y2O3 revealing a large range of compositions with melting temperatures below 2200°C and a minimum of 2053°C for the composition (Sc0.45Y0.55)2O3 are presented. These reduced temperatures enable for the first time the growth of high optical quality mixed sesquioxide crystals with disordered structure by the conventional Czochralski method from iridium crucibles. An (Er0.07Sc0.50Y0.43)2O3 crystal is successfully grown and characterized with respect to its crystallographic properties as well as its composition, thermal conductivity and optical absorption in the 1 µm range.

Effect of Internal Radiation on Process Parameters in the Global Simulation of Growing Large-Size Bulk β-Ga2O3 Single Crystals with the Czochralski Method

As a crystal grows, the temperature distribution of the crystal and melt will change. It is necessary to study the dynamic process of single-crystal growth. Due to the relatively low crystallization rates used in the industrial Czochralski growth system, a steady state is used to compute the temperature distribution and melt flow. A two-dimensional axisymmetric model of the whole Czochralski furnace was established. The dynamic growth process of large-size bulk β-Ga2O3 single crystal using the Czochralski method has been numerically analyzed with the parameter sweep method. In this paper, two cases of internal radiation and no internal radiation were compared to study the effect of radiation on the process parameters. The temperature distribution of the furnace, the temperature field, and the flow field of the melt was calculated. The temperature, the temperature gradient of the crystal, the temperature at the bottom of the crucible, and the heater power were studied for the crystals grown in the two cases of radiation. The results obtained in this study clearly show that the loss calculated by including the internal radiation is higher compared to that including the surface radiation.

Evaluation of the Performance of Published Point Defect Parameter Sets in Cone and Body Phase of a 300 mm Czochralski Silicon Crystal

Prediction and adjustment of point defect (vacancies and self-interstitials) distribution in silicon crystals is of utmost importance for microelectronic applications. The simulation of growth processes is widely applied for process development and quite a few different sets of point defect parameters have been proposed. In this paper the transient temperature, thermal stress and point defect distributions are simulated for 300 mm Czochralski growth of the whole crystal including cone and cylindrical growth phases. Simulations with 12 different published point defect parameter sets are compared to the experimentally measured interstitial–vacancy boundary. The results are evaluated for standard and adjusted parameter sets and generally the best agreement in the whole crystal is found for models considering the effect of thermal stress on the equilibrium point defect concentration.

Effect of the pulling, crystal and crucible rotation rate on the thermal stress and the melt–crystal interface in the Czochralski growth of germanium crystals

The effect of the pulling rate on the melt–crystal interface shape and melt streamline is investigated.

Optical, Structural and Spectroscopic Characterization of ZnS Nanocrystals Embedded in KBr Single Crystal Matrix Grown by Czochralski Method

ZnS nanocrystals were embedded in a KBr single crystal matrix using the Czochralski growth technique. The X-ray diffraction, FT-IR and optical spectroscopy revealed the incorporation of ZnS nanocrystals. A blue shift of the absorption edge of the obtained samples has been observed, indicating the quantum confinement effect. The optical band-gap is estimated to be about 4.67 eV. Two excitonic peaks appeared at 300.4 nm and 271 nm. The average nanocrystal size was derived from the optical spectra. Annealing led to a shift in the absorption edge towards longer wavelengths and an increasing of the emissions intensity. Raman lines of the nanoparticles are broader and frequency-shifted compared to those of the bulk crystals. These results show that KBr is a good matrix-host of ZnS nanocrystals, and that the elaborated samples can be used for important technological applications.