Determination of boron by the neutron depth profile (NDP) technique for VLSI processing application

1987 ◽  
Vol 113 (2) ◽  
pp. 379-382
Author(s):  
T. Z. Hossain ◽  
P. M. Zeitzoff
Keyword(s):  
Depth Profile ◽  
Processing Application ◽  
Neutron Depth Profile

Quantitative Determination of Lateral Concentration and Depth Profile of Histidine-Tagged Recombinant Proteins Probed by Grazing Incidence X-ray Fluorescence

2013 ◽  
Vol 117 (17) ◽  
pp. 5002-5008 ◽  
Author(s):  
Alexander Körner ◽  
Wasim Abuillan ◽  
Christina Deichmann ◽  
Fernanda F. Rossetti ◽  
Almut Köhler ◽  
...  
Keyword(s):  
Quantitative Determination ◽  
Recombinant Proteins ◽  
Depth Profile ◽  
Grazing Incidence ◽  
X Ray

Determination of the defect depth profile after saw cutting of GaAs wafers measured by positron annihilation

1998 ◽  
Vol 84 (4) ◽  
pp. 2255-2262 ◽  
Author(s):  
F. Börner ◽  
S. Eichler ◽  
A. Polity ◽  
R. Krause-Rehberg ◽  
R. Hammer ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Depth Profile ◽  
Defect Depth

Hydrogen depth profile determination of materials by elastic recoil detection analysis

2019 ◽  
Author(s):  
Róbert Riedlmajer ◽  
Dušan Vaňa ◽  
Marián Hazlinger
Keyword(s):  
Depth Profile ◽  
Elastic Recoil ◽  
Elastic Recoil Detection Analysis ◽  
Elastic Recoil Detection ◽  
Detection Analysis

Neutron Depth Profiles of Boron Implanted Semiconductors

1989 ◽  
Vol 166 ◽  
Author(s):  
Robert C. Bowman ◽  
John F. Knudsen ◽  
R. Gregory Downing
Keyword(s):  
Depth Profile ◽  
Depth Profiles ◽  
Computer Codes ◽  
Neutron Depth Profile

ABSTRACTThe nondestructive neutron depth profile (NDP) technique has been used to measure boron (10B) distributions in Si and Hg0.7Cd0.3 Te after multiple energy ion implants. The NDP results are compared with simulations generated by TRIM and SUPREM computer codes. The influence of SiO2 films on the boron profiles was examined and the effects of thermal anneals are also described.

Determination of particle-induced structural disorder depth profile in crystals using the grazing-angle incidence hard x-ray backscattering diffraction technique

2011 ◽  
Vol 44 (49) ◽  
pp. 495102
Author(s):  
Hakob (Jacob) P Bezirganyan ◽  
Siranush E Bezirganyan ◽  
Petros H Bezirganyan ◽  
Hayk H Bezirganyan
Keyword(s):  
Depth Profile ◽  
Grazing Angle ◽  
Structural Disorder ◽  
X Ray

On the determination of phosphorus depth profile in phosphorus-doped silicon

1989 ◽  
Vol 132 (1) ◽  
pp. 99-104 ◽  
Author(s):  
Z. B. Alfassi ◽  
M. H. Yang
Keyword(s):  
Depth Profile ◽  
Doped Silicon ◽  
Phosphorus Doped

Determination of the strain depth profile in solid-phase epitaxially grown SiGe layers using RBS/channeling

1998 ◽  
Vol 136-138 ◽  
pp. 395-399 ◽  
Author(s):  
A. Rodríguez ◽  
T. Rodríguez ◽  
A. Kling ◽  
J.C. Soares ◽  
M.F. da Silva ◽  
...  
Keyword(s):  
Depth Profile ◽  
Solid Phase

On the Application of the Photoacoustic Method for the Determination of the Thermal Properties of Heat-Treated and Annealed Al-Li Alloy

2011 ◽  
Vol 319-320 ◽  
pp. 43-50
Author(s):  
M. Sivabharathy ◽  
P. Palanichamy ◽  
M. Vasudevan ◽  
P. Kalyanasundaram ◽  
K. Ramachandran
Keyword(s):  
Thermal Properties ◽  
Thermal Property ◽  
Depth Profile ◽  
Theoretical Basis ◽  
Profile Analysis ◽  
Depth Profile Analysis ◽  
Photoacoustic Method ◽  
Quantitative Measurements ◽  
Heat Treated

In this paper, the application of photoacoustic methods to study thermal properties of Al-Li alloy is described. The photoacoustic measurements are carried out for thermal properties on Al-Li alloy and studied for various thicknesses. The theoretical basis for quantitative measurements is discussed together with the advantages and limitations of these methods as compared with conventional measurements. Applications to spectroscopic and depth-profile analysis and also to thermal property measurements in Al-Li samples heat-treated at 755K per hour and annealed at 505K are discussed. The results are compared with literature values, and discussed.

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