On the determination of phosphorus depth profile in phosphorus-doped silicon

1989 ◽  
Vol 132 (1) ◽  
pp. 99-104 ◽  
Author(s):  
Z. B. Alfassi ◽  
M. H. Yang
Keyword(s):  
Depth Profile ◽  
Doped Silicon ◽  
Phosphorus Doped

scholarly journals Determination of the Donor Pair Exchange Energy in Phosphorus-Doped Silicon

1970 ◽  
Vol 1 (2) ◽  
pp. 632-637 ◽  
Author(s):  
P. R. Cullis ◽  
J. R. Marko
Keyword(s):  
Exchange Energy ◽  
Doped Silicon ◽  
Pair Exchange ◽  
Phosphorus Doped

Determination of arsenic atom distribution arsenic doped silicon using HOLZ-line analysis

1996 ◽  
Vol 54 ◽  
pp. 976-977
Author(s):  
Y. Kikuchi ◽  
N. Hashikawa ◽  
F. Uesugi ◽  
E. Wakai ◽  
K. Watanabe ◽  
...  
Keyword(s):  
Inelastic Scattering ◽  
Zone Axis ◽  
Experimental Result ◽  
Background Intensity ◽  
Crystal Thickness ◽  
Arsenic Atom ◽  
Doped Silicon ◽  
P Type ◽  
Line Analysis

In order to measure the concentration of arsenic atoms in nanometer regions of arsenic doped silicon, the HOLZ analysis is carried out underthe exact [011] zone axis observation. In previous papers, it is revealed that the position of two bright lines in the outer SOLZ structures on the[011] zone axis is little influenced by the crystal thickness and the background intensity caused by inelastic scattering electrons, but is sensitive to the concentration of As atoms substitutbnal for Siatomic site.As the result, it becomes possible to determine the concentration of electrically activated As atoms in silicon within an observed area by means of the simple fitting between experimental result and dynamical simulatioan. In the present work, in order to investigate the distribution of electrically activated As in silicon, the outer HOLZ analysis is applied using a nanometer sized probe of TEM equipped with a FEG.Czodiralsld-gown<100>orientated p-type Si wafers with a resistivity of 10 Ώ cm are used for the experiments.TheAs+ implantation is performed at a dose of 5.0X1015cm-2at 25keV.

New Process Integration of Sequential Phosphorus-Doped Silicon for Trench Field Plate Power MOSFETs

2021 ◽  
pp. 1-1
Author(s):  
Kota Tomita ◽  
Tatsuya Shiraishi ◽  
Hiroaki Kato ◽  
Hiroyuki Kishimoto ◽  
Katsura Miyashita ◽  
...  
Keyword(s):  
Process Integration ◽  
Power Mosfets ◽  
Field Plate ◽  
New Process ◽  
Doped Silicon ◽  
Phosphorus Doped

Nano-scale Depth Profiles of Electrical Properties of Phosphorus Doped Silicon for Ultra-Shallow Junction Evaluation

2021 ◽  
pp. 1-1
Author(s):  
Hung-Yuan Chang ◽  
Yew-Chung Sermon Wu ◽  
Chia-He Chang ◽  
Kun-Lin Lin ◽  
Abhijeet Joshi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Shallow Junction ◽  
Depth Profiles ◽  
Nano Scale ◽  
Doped Silicon ◽  
Phosphorus Doped

scholarly journals Dynamical decoupling of electron spins in phosphorus-doped silicon

2011 ◽  
Vol 56 (7) ◽  
pp. 591-597 ◽  
Author(s):  
Xing Rong ◽  
Ya Wang ◽  
JiaHui Yang ◽  
JinXian Zhu ◽  
WanJie Xu ◽  
...  
Keyword(s):  
Electron Spins ◽  
Dynamical Decoupling ◽  
Doped Silicon ◽  
Phosphorus Doped

Process Optimization of Trench Field Plate Power MOSFETs with Sequential Phosphorus-Doped Silicon

2020 ◽  
Author(s):  
Kota Tomita ◽  
Tatsuya Shiraishi ◽  
Hiroaki Kato ◽  
Hiroyuki Kishimoto ◽  
Katsura Miyashita ◽  
...  
Keyword(s):  
Process Optimization ◽  
Power Mosfets ◽  
Field Plate ◽  
Doped Silicon ◽  
Phosphorus Doped

Fine structures of indirect exciton absorption in phosphorus-doped silicon

1975 ◽  
Vol 16 (9) ◽  
pp. 1105-1108 ◽  
Author(s):  
T. Nishino ◽  
Y. Hamakawa
Keyword(s):  
Exciton Absorption ◽  
Indirect Exciton ◽  
Doped Silicon ◽  
Fine Structures ◽  
Phosphorus Doped

Quantitative Determination of Lateral Concentration and Depth Profile of Histidine-Tagged Recombinant Proteins Probed by Grazing Incidence X-ray Fluorescence

2013 ◽  
Vol 117 (17) ◽  
pp. 5002-5008 ◽  
Author(s):  
Alexander Körner ◽  
Wasim Abuillan ◽  
Christina Deichmann ◽  
Fernanda F. Rossetti ◽  
Almut Köhler ◽  
...  
Keyword(s):  
Quantitative Determination ◽  
Recombinant Proteins ◽  
Depth Profile ◽  
Grazing Incidence ◽  
X Ray

The effects of uniaxial compressive stress on the terahertz emission from phosphorus-doped silicon devices

2005 ◽  
Vol 98 (10) ◽  
pp. 103511 ◽  
Author(s):  
P.-C. Lv ◽  
X. Zhang ◽  
J. Kolodzey ◽  
M. A. Odnoblyudov ◽  
I. N. Yassievich
Keyword(s):  
Compressive Stress ◽  
Terahertz Emission ◽  
Silicon Devices ◽  
Doped Silicon ◽  
Phosphorus Doped ◽  
Uniaxial Compressive Stress
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