Electrical transport mechanism in Al/V2O5/Al microdevices

An improved understanding of the origin of the electrical transport mechanism is of importance to the rational design of the highly performance electronic device. However, the complex interfacial environment and...

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Effect of iodine doping on the electrical transport mechanism in plasma polymerized 2,6-diethylaniline thin films

Journal of Physics and Chemistry of Solids ◽

10.1016/j.jpcs.2013.09.013 ◽

2014 ◽

Vol 75 (2) ◽

pp. 198-202 ◽

Cited By ~ 5

Author(s):

Rummana Matin ◽

A.H. Bhuiyan

Keyword(s):

Thin Films ◽

Electrical Transport ◽

Transport Mechanism ◽

Iodine Doping

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TEM Study and Hall Measurement of nc-Si Prepared by Controlled Deposition

MRS Proceedings ◽

10.1557/proc-283-591 ◽

1992 ◽

Vol 283 ◽

Cited By ~ 8

Author(s):

Masami Nakata ◽

Isamu Shimizu

Keyword(s):

Electrical Transport ◽

Transport Mechanism ◽

Crystalline Silicon ◽

Nanocrystalline Silicon ◽

Dominant Factor ◽

Microscopic Structure ◽

Hall Effect Measurements ◽

Sample Structure ◽

Controlled Deposition ◽

General Transport

ABSTRACTWe report the results of a study in which we combined growth experiments with measurements of the nc-structure and of electrical transport Samples were prepared by plasma enhanced-CVD using SiF4 and H2 gases. We also added PH3 and H2 as control parameters for structural change. The microscopic structure was directly observed by TEM. Electron transport in nc-Si was investigated by Hall effect measurements performed at temperatures from 100K to 400K. We produced samples in which the Hall mobility was applied from general transport mechanism of poly crystalline silicon. However, from TEM observation, we conclude that dominant factor on electrical transport strongly depends on the sample structure, and nanocrystalline-silicon structure is so varied as to make it difficult to determine the transport mechanism without the observation of the microscopic structure.

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Structure, microstructure, electrical transport mechanism and magnetoresistance in La0.8Ag0.2MnO3

Journal of Physics Conference Series ◽

10.1088/1742-6596/1402/6/066011 ◽

2019 ◽

Vol 1402 ◽

pp. 066011

Author(s):

B Kurniawan ◽

N A Sahara ◽

A Imadudin ◽

I N Rahman ◽

D S Razaq ◽

...

Keyword(s):

Electrical Transport ◽

Transport Mechanism

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Influence of process parameters on the electrical transport mechanism in sprayed CdS films

Solar Energy Materials ◽

10.1016/0165-1633(87)90065-7 ◽

1987 ◽

Vol 15 (3) ◽

pp. 189-208 ◽

Cited By ~ 2

Author(s):

Shailaja Kolhe ◽

S.K. Kulkarni ◽

M.G. Takwale ◽

B.R. Marathe ◽

V.G. Bhide

Keyword(s):

Process Parameters ◽

Electrical Transport ◽

Transport Mechanism ◽

Influence Of Process Parameters ◽

Cds Films

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Influence of interface inhomogeneity on the electrical transport mechanism of CdSe nanowire/Au Schottky junctions

Physical Chemistry Chemical Physics ◽

10.1039/c8cp02859a ◽

2018 ◽

Vol 20 (30) ◽

pp. 19932-19937 ◽

Cited By ~ 5

Author(s):

Weifeng Jin ◽

Xiaojing Mu ◽

Kun Zhang ◽

Zhengguo Shang ◽

Lun Dai

Keyword(s):

Schottky Barrier ◽

Electrical Transport ◽

Transport Mechanism ◽

Single Nanowire ◽

Schottky Junctions ◽

Barrier Inhomogeneity

Schottky barrier inhomogeneity and its influence on the electrical transport mechanism of single nanowire-based Schottky junctions have been investigated.

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