p-Type Iodine-Doping of Cu3N and Its Conversion to γ-CuI for the Fabrication of γ-CuI/Cu3N p-n Heterojunctions

Cu3N with a cubic crystal structure is obtained in this paper by the sputtering of Cu under N2 followed by annealing under NH3: H2 at 400 °C, after which it was doped with iodine at room temperature resulting into p-type Cu3N with hole densities between 1016 and 1017 cm−3. The Cu3N exhibited distinct maxima in differential transmission at ~2.01 eV and 1.87 eV as shown by ultrafast pump-probe spectroscopy, corresponding to the M and R direct energy band gaps in excellent agreement with density functional theory calculations, suggesting that the band gap is clean and free of mid-gap states. The Cu3N was gradually converted into optically transparent γ-CuI that had a hole density of 4 × 1017 cm−3, mobility of 12 cm2/Vs and room temperature photoluminescence at 3.1 eV corresponding to its direct energy band gap. We describe the fabrication and properties of γ-CuI/TiO2/Cu3N and γ-CuI/Cu3N p-n heterojunctions that exhibited rectifying current-voltage characteristics, but no photogenerated current attributed to indirect recombination via shallow states in Cu3N and/or deep states in the γ-CuI consistent with the short (ps) lifetimes of the photoexcited electrons-holes determined from transient absorption–transmission spectroscopy.

Iodine doping of a photocuring, one-component embedding medium for µCT and histology

Objective: Evaluation of μCT scans of bone implant complexes often shows a specific problem: if an implant material has a very similar radiopacity as the embedding medium (e.g. methacrylate resin), the implant is not visible in the μCT image. Segmentation is not possible, and especially osseointegration as one of the most important parameter for biocompatibility is not evaluable. Methods: To ensure μCT visualisation and contrast enhancement of the evaluated materials, the embedding medium Technovit® VLC7200 was doped with an iodine monomer for higher radiopacity in different concentrations and tested regarding to handling, polymerisation, and histological preparation, and visualisation in µCT. Six different µCT devices were used and compared with regard to scan conditions, contrast, artefacts, image noise, and spatial resolution for the evaluation of the bone-implant blocks. Results: Visualisation and evaluation of all target structures showed very good results in all μCT scans as well as in histology and histological staining, without negative effects caused by iodine doping. Subsequent evaluation of explants of in vivo experiments without losing important information was possible with iodine doped embedding medium. Conclusion: Visualisation of implants with a similar radiopacity as the embedding medium could be considerably improved. µCT scan settings should be selected with the highest possible resolution, and different implant materials should be scanned individually for optimal segmentation. µCT devices with higher resolutions should be preferred. Advances in knowledge: Iodine doped embedding medium is a useful option to increase radiopacity for better visualisation and evaluation of special target structures in µCT.

Effects of Iodine Doping on Electrical Characteristics of Solution-Processed Copper Oxide Thin-Film Transistors

In order to implement oxide semiconductor-based complementary circuits, the improvement of the electrical properties of p-type oxide semiconductors and the performance of p-type oxide TFTs is certainly required. In this study, we report the effects of iodine doping on the structural and electrical characteristics of copper oxide (CuO) semiconductor films and the TFT performance. The CuO semiconductor films were fabricated using copper(II) acetate hydrate as a precursor to solution processing, and iodine doping was performed using vapor sublimated from solid iodine. Doped iodine penetrated the CuO film through grain boundaries, thereby inducing tensile stress in the film and increasing the film’s thickness. Iodine doping contributed to the improvement of the electrical properties of the solution-processed CuO semiconductor including increases in Hall mobility and hole-carrier concentration and a decrease in electrical resistivity. The CuO TFTs exhibited a conduction channel formation by holes, that is, p-type operation characteristics, and the TFT performance improved after iodine doping. Iodine doping was also found to be effective in reducing the counterclockwise hysteresis in the transfer characteristics of CuO TFTs. These results are explained by physicochemical reactions in which iodine replaces oxygen vacancies and oxygen atoms through the formation of iodide anions in CuO.

Scattering Mechanisms and Suppression of Bipolar Diffusion Effect in Bi2Te2.85Se0.15Ix Compounds

We investigated the anisotropic thermoelectric properties of the Bi2Te2.85Se0.15Ix (x = 0.0, 0.1, 0.3, 0.5 mol.%) compounds, synthesized by ball-milling and hot-press sintering. The electrical conductivities of the Bi2Te2.85Se0.15Ix were significantly improved by the increase of carrier concentration. The dominant electronic scattering mechanism was changed from the mixed (T ≤ 400 K) and ionization scattering (T ≥ 420 K) for pristine compound (x = 0.0) to the acoustic phonon scattering by the iodine doping. The Hall mobility was also enhanced with the increasing carrier concentration. The enhancement of Hall mobility was caused by the increase of the mean free path of the carrier from 10.8 to 17.7 nm by iodine doping, which was attributed to the reduction of point defects without the meaningful change of bandgap energy. From the electron diffraction patterns, a lattice distortion was observed in the iodine doped compounds. The modulation vector due to lattice distortion increased with increasing iodine concentration, indicating the shorter range lattice distortion in real space for the higher iodine concentration. The bipolar thermal conductivity was suppressed, and the effective masses were increased by iodine doping. It suggests that the iodine doping minimizes the ionization scattering giving rise to the suppression of the bipolar diffusion effect, due to the prohibition of the BiTe1 antisite defect, and induces the lattice distortion which decreases lattice thermal conductivity, resulting in the enhancement of thermoelectric performance.

Fine-grained polycrystalline MoTe2 with enhanced thermoelectric properties through iodine doping

Consisting of heavy elements and favorable electronic structure, MoTe2 has great potential as a good thermoelectric material for heat-to-electricity conversion. While some experimental work has been performed on the p-type version, n-type MoTe2 is theoretically predicted to have a great conversion efficiency and is crucial for eventual device functionality, yet has not been explored. Here, the preparation and thermoelectric properties of n-type iodine-doped nano-polycrystalline MoTe2 are currently reported. Nano-polycrystalline MoTe2-xIx is obtained by ball milling and spark plasma sintering techniques. The composition, morphology and crystal structure of the prepared materials were analyzed by XRD and FESEM, which indicated a homogeneous single phase. The measured transport properties over the temperature range of 298-823K indicate that iodine doping greatly enhances the carrier concentration and corresponding power factor, and drastically reducing the thermal conductivity. The ECR (Electrical conductivity ratios) carrier scattering analysis demonstrates that dislocation scattering is the main mechanism throughout the experimental temperature range. With the temperature and doping increasing, the thermal conductivity was reduced rapidly, and the minimum value was 1.19 Wm-1K-1 at 673K. The maximum value of the figure merit ZT ~ 0.16 over 673-750K, which is much higher than other reported values. These excellent properties imply that MoTe2 will be an efficient candidate for thermoelectric applications.