Vibronic intensities in the optical absorption spectra of Pr3+ in Cs2NaPrxY1−xCl6: concentration and temperature dependence

1995 ◽  
Vol 62 (5) ◽  
pp. 827-831
Author(s):  
T. Luxbacher ◽  
H. P. Fritzer ◽  
K. Gatterer ◽  
C. D. Flint

1998 ◽  
Vol 510 ◽  
Author(s):  
Masashi Suezawa

AbstractIn this report, we proposed that complexes responsible for optical absorption lines in Si grown in a hydrogen (H) atmsophere were composed of interstitial Si and H atoms and then determined the formation energy of interstitial Si in Au-doped Si from the measurements of optical absorption due to H bound to interstitial Si. In the first experiment, specimens were grown in a hydrogen atmosphere. In the second experiment, Si crystals were doped with Au by a vapor method; namely, specimens were sealed in quartz capsules together with a piece of Au wire and then annealed at high temperature followed by quenching in water. Then the specimens were doped with H by annealing them in hydrogen atmosphere of 1 atm. followed by quenching. We measured optical absorption of those specimens. From the effect of impurity on the optical absorption spectra of Si grown in a hydrogen atmosphere, we concluded that those optical absorption lines, including 2223 cm−1line, were due to complexes of interstitial Si and H. From the temperature dependence of the intensity of 2223 cm−1line, the formation energy of interstitial Si in Au-doped Si was determined to be about 2.1 eV



1990 ◽  
Vol 42 (18) ◽  
pp. 11610-11618 ◽  
Author(s):  
H. Okada ◽  
N. Kojima ◽  
T. Ban ◽  
I. Tsujikawa


2017 ◽  
Vol 43 (3) ◽  
pp. 297-300 ◽  
Author(s):  
S. S. Savchenko ◽  
A. S. Vokhmintsev ◽  
I. A. Weinstein


2003 ◽  
Vol 0 (1) ◽  
pp. 320-323
Author(s):  
C. Sasaki ◽  
H. Naito ◽  
M. Iwata ◽  
H. Kudo ◽  
Y. Yamada ◽  
...  






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