Temperature Dependence of Optical Absorption Spectra of Solvated Electrons in CD3OD for T .ltoreq. Tc

1995 ◽  
Vol 99 (18) ◽  
pp. 6794-6800 ◽  
Author(s):  
V. Herrmann ◽  
P. Krebs

1990 ◽  
Vol 68 (4) ◽  
pp. 553-557 ◽  
Author(s):  
J.-P. Jay-Gerin ◽  
C. Ferradini

On the basis of data found in the literature, it is shown that a correlation exists between the molar extinction coefficient at the maximum optical absorption of the solvated electron (εmax), its width at half height (W1/2), and the energy corresponding to that maximum (EAmax) Keywords: solvated electrons, polar solvants, optical absorption spectra. [Journal translation]



1987 ◽  
Vol 91 (6) ◽  
pp. 1360-1365 ◽  
Author(s):  
Sidney. Golden ◽  
Thomas R. Tuttle ◽  
Salia M. Lwenje


1995 ◽  
Vol 73 (12) ◽  
pp. 2126-2130 ◽  
Author(s):  
Yixing Zhao ◽  
Gordon R. Freeman

The optical absorption spectra of es− in 1-butylamine–water mixed solvents increase smoothly in energy and intensity as the water content is increased, with the exception of a small decrease in intensity on going from 95 to 100 mol% water. At 298 K the value of Gεmax increases from 1.42 × 10−21 m2/16 aJ (8.6 × 103 es−L/100 eV mol cm) in pure 1-butylamine to 8.3 × 10−21 m2/16 aJ (50 × 103 es−L/100 eV mol cm) in pure water, and the value of EAmax increases from 115 zJ (0.72 eV) to 278 zJ (1.74 eV). In the pure amine, if G(es−) = 0.27, then εmax = 5.3 × 10−21 m2/es− (3200 m2/mol). The solvent composition dependences of Gεmax and EAmax indicate little selective solvation of es− by water; this might be due to relatively "ideal" mixing of water and amine in the binary solvents. The temperature coefficient −dEAmax/dT = 0.43 zJ/K in pure 1-butylamine, 0.47 in pure water, and has a minimum of 0.27 in the 50:50 mixture. Keywords: 1-butylamine–water mixed solvents, optical absorption spectra, solvated electron, temperature dependence.



1998 ◽  
Vol 510 ◽  
Author(s):  
Masashi Suezawa

AbstractIn this report, we proposed that complexes responsible for optical absorption lines in Si grown in a hydrogen (H) atmsophere were composed of interstitial Si and H atoms and then determined the formation energy of interstitial Si in Au-doped Si from the measurements of optical absorption due to H bound to interstitial Si. In the first experiment, specimens were grown in a hydrogen atmosphere. In the second experiment, Si crystals were doped with Au by a vapor method; namely, specimens were sealed in quartz capsules together with a piece of Au wire and then annealed at high temperature followed by quenching in water. Then the specimens were doped with H by annealing them in hydrogen atmosphere of 1 atm. followed by quenching. We measured optical absorption of those specimens. From the effect of impurity on the optical absorption spectra of Si grown in a hydrogen atmosphere, we concluded that those optical absorption lines, including 2223 cm−1line, were due to complexes of interstitial Si and H. From the temperature dependence of the intensity of 2223 cm−1line, the formation energy of interstitial Si in Au-doped Si was determined to be about 2.1 eV





1990 ◽  
Vol 42 (18) ◽  
pp. 11610-11618 ◽  
Author(s):  
H. Okada ◽  
N. Kojima ◽  
T. Ban ◽  
I. Tsujikawa


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