Instabilities and transport properties in sheared granular gases

Author(s):  
M. Sasvári ◽  
J. Kertész ◽  
D. E. Wolf



1988 ◽  
Vol 102 ◽  
pp. 165-174
Author(s):  
C. de Michelis

AbstractImpurities being an important concern in tokamaks, spectroscopy plays a key role in their understanding. Techniques for the evaluation of concentrations, power losses and transport properties are surveyed, and a few developments are outlined.



Author(s):  
Alain Claverie ◽  
Zuzanna Liliental-Weber

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.





1999 ◽  
Vol 96 (6) ◽  
pp. 1111-1116 ◽  
Author(s):  
E. Falcon ◽  
S. Fauve ◽  
C. Laroche


1993 ◽  
Vol 3 (12) ◽  
pp. 2173-2188
Author(s):  
N. G. Chechenin ◽  
A. V. Chernysh ◽  
V. V. Korneev ◽  
E. V. Monakhov ◽  
B. V. Seleznev


1989 ◽  
Vol 50 (21) ◽  
pp. 3233-3242 ◽  
Author(s):  
M. Očko ◽  
E. Babić


1980 ◽  
Vol 41 (10) ◽  
pp. 1173-1181 ◽  
Author(s):  
M.-L. Theye ◽  
A. Gheorghiu ◽  
T. Rappeneau ◽  
A. Lewis


1988 ◽  
Vol 49 (7) ◽  
pp. 1147-1159 ◽  
Author(s):  
V. Zehnlé ◽  
B. Bernu ◽  
J. Wallenborn


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