Localized vibrational modes in semiconductors: Infrared absorption

Author(s):  
William G. Spitzer

1987 ◽  
Vol 92 ◽  
Author(s):  
H. J. Stein

ABSTRACTInfrared absorption by localized vibrational modes has been used to investigate rapid thermal annealing (RTA) of oxygen-vacancy (O-V) defects in O-implanted Si. At least three processes are involved in the annealing of O-V defects. An activation energy of 1.0 ± 0.2 eV for a process leading to O-V formation is attributed to O-V diffusion. The final O-V annealing stage is attributed to oxygen clustering around O2-V centers. Processes observed here in RTA are expected to be operative during implantation at the temperatures (400 to 600°C) used for production of silicon-on-insulator structures.



1989 ◽  
Vol 66 (6) ◽  
pp. 2589-2596 ◽  
Author(s):  
R. Murray ◽  
R. C. Newman ◽  
M. J. L. Sangster ◽  
R. B. Beall ◽  
J. J. Harris ◽  
...  


1969 ◽  
Vol 31 (1) ◽  
pp. 237-243 ◽  
Author(s):  
W. Nazarewicz ◽  
J. Jurkowski


2021 ◽  
Vol 94 (11) ◽  
Author(s):  
O. V. Bachurina ◽  
A. A. Kudreyko




1977 ◽  
Vol 22 (1) ◽  
pp. 79-81 ◽  
Author(s):  
D.N. Talwar ◽  
Bal K. Agrawal


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