Role of MW-ECR hydrogen plasma on dopant deactivation and open-circuit voltage in crystalline silicon solar cells

2014 ◽  
Vol 118 (1) ◽  
pp. 231-237 ◽  
Author(s):  
D. Madi ◽  
P. Prathap ◽  
A. Slaoui
2010 ◽  
Vol 10 (2) ◽  
pp. S222-S225 ◽  
Author(s):  
Sung-Bin Cho ◽  
Kyoung-Kook Hong ◽  
Joo-Youl Huh ◽  
Hyun Jung Park ◽  
Ji-Weon Jeong

2011 ◽  
Vol 181-182 ◽  
pp. 328-331
Author(s):  
Ming Ji Shi ◽  
Lei Xiong ◽  
Lan Li Chen

It is necessary to improve the open circuit voltage of amorphous silicon solar cells for its applications. In this paper, we discuss the effects of hydrogen plasma treatment on the P layer and the performance of the amorphous silicon solar cells. The result shows that the open circuit voltage increased by 0.0257V, the fill factor increased by 0.039 and the energy conversion efficiency increased by 9%. The highest VOCwe got was 0.99V. Treating P layer with hydrogen plasma has been demonstrated to result in materials with improved crystalline volume fraction which was very effective to increase the light absorption of the intrinsic layer. What is more, it could be easily integrated into the amorphous silicon solar cell mass production process.


1995 ◽  
Vol 36 (1) ◽  
pp. 99-105 ◽  
Author(s):  
H.E. Elgamel ◽  
S. Sivoththaman ◽  
M.Y. Ghannam ◽  
J. Nijs ◽  
R. Mertens ◽  
...  

2011 ◽  
Vol 1288 ◽  
Author(s):  
Yasuko Hirayama ◽  
Hirotada Inoue ◽  
Kenta Matsuyama ◽  
Yasu umi Tsunomura ◽  
Daisuke Fujishima ◽  
...  

ABSTRACTIn order to reduce the power-generating cost of silicon solar cells, it is necessary to achieve a high conversion efficiency using a thinner crystalline silicon (c-Si) substrate. The HIT solar cell is an amorphous silicon (a-Si) /crystalline silicon (c-Si) heterojunction solar cell that makes it possible to realize excellent surface passivation and hence high open circuit voltage (Voc). In addition, its symmetrical structure and a low-temperature fabrication process that is under 200°C provide advantages in reducing thermal and mechanical stresses within the device so that it can easily be applied to thinner solar cells. We fabricated HIT solar cells using thin wafers from 58-98 μm, and achieved a 22.8% conversion efficiency with a HIT solar cell using a 98-μm-thick wafer, and an excellent Voc value of 0.747 V with a HIT solar cell using a 58-μm-thick wafer.


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