Determination of Rock Fracture Toughness K IIC and its Relationship with Tensile Strength

2011 ◽  
Vol 44 (5) ◽  
pp. 621-627 ◽  
Author(s):  
Yan Jin ◽  
Jianbo Yuan ◽  
Mian Chen ◽  
K. P. Chen ◽  
Yunhu Lu ◽  
...  
1997 ◽  
Vol 34 (3-4) ◽  
pp. 49.e1-49.e11 ◽  
Author(s):  
Chen Zhixi ◽  
Chen Mian ◽  
Jin Yan ◽  
Huang Rongzun

1993 ◽  
Vol 33 (3) ◽  
pp. 177-188 ◽  
Author(s):  
H. Guo ◽  
N.I. Aziz ◽  
L.C. Schmidt

2012 ◽  
Vol 4 (2) ◽  
pp. 163 ◽  
Author(s):  
O. Saeidi ◽  
S.R. Torabi ◽  
M. Ataei ◽  
S.H. Hoseinie

1999 ◽  
Vol 605 ◽  
Author(s):  
H. Kahn ◽  
N. Tayebi ◽  
R. Ballarini ◽  
R.L. Mullen ◽  
A.H. Heuer

AbstractDetermination of the mechanical properties of MEMS (microelectromechanical systems) materials is necessary for accurate device design and reliability prediction. This is most unambiguously performed using MEMS-fabricated test specimens and MEMS loading devices. We describe here a wafer-level technique for measuring the bend strength, fracture toughness, and tensile strength of MEMS materials. The bend strengths of surface-micromachined polysilicon, amorphous silicon, and polycrystalline 3C SiC are 5.1±1.0, 10.1±2.0, and 9.0±1.0 GPa, respectively. The fracture toughness of undoped and P-doped polysilicon is 1.2±0.2 MPa√m, and the tensile strength of polycrystalline 3C SiC is 3.2±1.2 GPa. These results include the first report of the mechanical strength of micromachined polycrystalline 3C SiC.


1994 ◽  
Vol 38 (1-2) ◽  
pp. 181-184 ◽  
Author(s):  
X.L. Zhao ◽  
R.J. Fowell ◽  
J.-C. Roegiers ◽  
C. Xu

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