The temperature dependence of the perpendicular giant magnetoresistance in Co/Cu multilayered nanowires

1998 ◽  
Vol 4 (4) ◽  
pp. 413-420 ◽  
Author(s):  
L. Piraux ◽  
S. Dubois ◽  
A. Fert ◽  
L. Belliard
1997 ◽  
Vol 70 (3) ◽  
pp. 396-398 ◽  
Author(s):  
S. Dubois ◽  
C. Marchal ◽  
J. M. Beuken ◽  
L. Piraux ◽  
J. L. Duvail ◽  
...  

Nanomaterials ◽  
2019 ◽  
Vol 10 (1) ◽  
pp. 5
Author(s):  
Himeyo Kamimura ◽  
Masamitsu Hayashida ◽  
Takeshi Ohgai

Anodized aluminum oxide (AAO) films, which have numerous nanochannels ca. 75 nm in diameter, D and ca. 70 µm in length, L (ca. 933 in aspect ratio, L/D), were used as a template material for growing Co/Cu multilayered nanowire arrays. The multilayered nanowires with alternating Cu layer and Co layers were synthesized by using an electrochemical pulsed-potential deposition technique. The thickness of the Cu layer was adjusted from ca. 2 to 4 nm while that of the Co layer was regulated from ca. 13 to 51 nm by controlling the pulsed potential parameters. To get a Co/Cu multilayered nanowire in an electrochemical in-situ contact with a sputter-deposited Au thin layer, the pulsed potential deposition was continued up to ca. 5000 cycles until the nanowire reached out toward the surface of AAO template. Current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) effect reached up to ca. 23.5% at room temperature in Co/Cu multilayered nanowires with ca. 3500 Co/Cu bilayers (Cu: 1.4 nm and Co: 18.8 nm). When decreasing the thickness of Co layer, the CPP-GMR value increased due to the Valet–Fert model in the long spin diffusion limit.


1997 ◽  
Vol 165 (1-3) ◽  
pp. 30-33 ◽  
Author(s):  
S. Dubois ◽  
J.M. Beuken ◽  
L. Piraux ◽  
J.L. Duvail ◽  
A. Fert ◽  
...  

1993 ◽  
Vol 313 ◽  
Author(s):  
M.A.M. Gijs ◽  
S.K.J. Lenczowski ◽  
J.B. Giesbers

ABSTRACTWe have fabricated pillar-like microstructures of high vacuum sputtered Fe/Cr Magnetic Multilayers and measured the giant magnetoresistance effect in the configuration where the measuring current is perpendicular to the film plane from 4.2 K to 300 K. At 4.2 K we find a magnetoresistance of 108 % for multilayers with a Fe thickness of 3 nm and a Cr thickness of 1 nm. The pronounced temperature dependence of the perpendicular magnetoresistance is studied for samples with different Cr thicknesses and tentatively explained by electron-Magnon scattering. The low-temperature data are compared with existing low-temperáture models.


Sign in / Sign up

Export Citation Format

Share Document