Perpendicular Magnetoresistance of Microstructured Pillars in Fe/Cr Magnetic Multilayers

1993 ◽  
Vol 313 ◽  
Author(s):  
M.A.M. Gijs ◽  
S.K.J. Lenczowski ◽  
J.B. Giesbers
Keyword(s):  
Low Temperature ◽  
Temperature Dependence ◽  
Giant Magnetoresistance ◽  
High Vacuum ◽  
Magnetic Multilayers ◽  
Film Plane ◽  
Temperature Data ◽  
Magnetoresistance Effect ◽  
Giant Magnetoresistance Effect

ABSTRACTWe have fabricated pillar-like microstructures of high vacuum sputtered Fe/Cr Magnetic Multilayers and measured the giant magnetoresistance effect in the configuration where the measuring current is perpendicular to the film plane from 4.2 K to 300 K. At 4.2 K we find a magnetoresistance of 108 % for multilayers with a Fe thickness of 3 nm and a Cr thickness of 1 nm. The pronounced temperature dependence of the perpendicular magnetoresistance is studied for samples with different Cr thicknesses and tentatively explained by electron-Magnon scattering. The low-temperature data are compared with existing low-temperáture models.

Spin Current

2017 ◽  
Keyword(s):  
Thin Films ◽  
Electron Spin ◽  
Giant Magnetoresistance ◽  
Spin Current ◽  
Magnetic Nanostructures ◽  
New Physics ◽  
Magnetic Multilayers ◽  
Magnetoresistance Effect ◽  
Spin Electronics ◽  
Giant Magnetoresistance Effect

Since the discovery of the giant magnetoresistance effect in magnetic multilayers in 1988, a new branch of physics and technology, called spin-electronics or spintronics, has emerged, where the flow of electrical charge as well as the flow of electron spin, the so-called “spin current,” are manipulated and controlled together. The physics of magnetism and the application of spin current have progressed in tandem with the nanofabrication technology of magnets and the engineering of interfaces and thin films. This book aims to provide an introduction and guide to the new physics and applications of spin current, with an emphasis on the interaction between spin and charge currents in magnetic nanostructures.

scholarly journals Mechanism of Inverse Magnetoresistance in High-\(T_{a}\) Annealed MnNi/Co/Ag(Cu)/Py Spin Valves

2020 ◽  
Vol 30 (3) ◽  
Author(s):  
Nguyen Anh Tuan
Keyword(s):  
Transport Properties ◽  
High Temperatures ◽  
Giant Magnetoresistance ◽  
High Vacuum ◽  
Spin Valve ◽  
Rf Sputtering ◽  
Spin Valves ◽  
Magnetoresistance Effect ◽  
Giant Magnetoresistance Effect ◽  
Magnetic Transport

The magnetic transport properties -- magnetoresistive (MR) effects of MnNi/Co/Ag(Cu)/\break Py pinned spin valve structures (SVs) prepared by rf sputtering method and annealed at \(T_{a} = 100\)°C - 500°C for 30 minutes in high vacuum (\(\sim 10^{ - 5}\) torr) are investigated. The received results show a change in the observed MR behaviors from a normal giant magnetoresistance effect to an inverse magnetoresistance effect after annealing at high temperatures, 300°C and 400°C, for these SVs. The origin and mechanism of the IMR behavior are analyzed and discussed. These results will suggest an ability to manufacture SV devices used the IMR effect for enhancing the application capacities for SV-sensor systems.

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