Forward Raman scattering in GaAs/AlAs superlattices: Study of optical phonon anisotropy

1999 ◽  
Vol 8 (3) ◽  
pp. 371-376 ◽  
Author(s):  
D.A. Tenne ◽  
V.A. Haisler ◽  
N.T. Moshegov ◽  
A.I. Toropov ◽  
A.P. Shebanin ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Optical Phonon

Study of anharmonicity in pure and doped InSe by Raman scattering

2018 ◽  
Vol 32 (30) ◽  
pp. 1850340 ◽  
Author(s):  
Mahmoud Zolfaghari
Keyword(s):  
Raman Scattering ◽  
Temperature Dependence ◽  
Temperature Variation ◽  
Optical Phonon ◽  
Line Center ◽  
Anharmonic Effect ◽  
Layered Semiconductor ◽  
Center Shift ◽  
Raman Modes ◽  
Quartic Anharmonicity

With the help of temperature dependence, Raman scattering anharmonic effect of various modes of layered semiconductor InSe over temperature range of 20–650 K has been studied. It was found that with an increase in temperature, anharmonicity will increase. Two and three phonons coupling with optical phonon, are used to describe temperature-induced anharmonicity in the linewidth of Raman modes. It was found that the temperature variation of the phonon parameter can be accounted for well by the cubic term in anharmonic model. To describe line-center shift of Raman modes, a model not considering independently cubic and quartic anharmonicity was used. A similar study has been done for InSe doped with different concentration of GaS dopant. The result of temperature study of InSe doped with GaS revealed that in this case anharmonicity increases with an increase in dopant and an increase in temperature.

Raman scattering on silicon nanowires: The thermal conductivity of the environment determines the optical phonon frequency

2006 ◽  
Vol 88 (23) ◽  
pp. 233114 ◽  
Author(s):  
H. Scheel ◽  
S. Reich ◽  
A. C. Ferrari ◽  
M. Cantoro ◽  
A. Colli ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Raman Scattering ◽  
Silicon Nanowires ◽  
Optical Phonon ◽  
Phonon Frequency ◽  
Optical Phonon Frequency

Raman scattering study of the long-wavelength longitudinal-optical-phonon–plasmon coupled modes in high-mobility InN layers

2009 ◽  
Vol 79 (15) ◽  
Author(s):  
Ramon Cuscó ◽  
Jordi Ibáñez ◽  
Esther Alarcón-Lladó ◽  
Luis Artús ◽  
Tomohiro Yamaguchi ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Optical Phonon ◽  
High Mobility ◽  
Longitudinal Optical ◽  
Longitudinal Optical Phonon ◽  
Coupled Modes ◽  
Long Wavelength ◽  
Scattering Study

Raman Study of Strain and Confinement Effects in Si/Ge Strained Layer Superlattices Under Hydrostatic Pressure

1991 ◽  
Vol 220 ◽  
Author(s):  
Zhifeng Sui ◽  
Irving P. Herman ◽  
Joze Bevk
Keyword(s):  
Hydrostatic Pressure ◽  
Raman Scattering ◽  
Optical Phonon ◽  
Phonon Frequency ◽  
Optical Phonons ◽  
Biaxial Strain ◽  
Strained Layer ◽  
Strained Layer Superlattice ◽  
Raman Study ◽  
Strained Layer Superlattices

ABSTRACTThe effects of strain and confinement on optical phonons in a Si12Ge4 strained layer superlattice grown by MBE on c-Si (001) were studied as a function of hydrostatic pressure (T = 295 K) using Raman scattering. The change of phonon frequency with pressure, dω/dP, for the principal quasi-confined LO mode in the Ge layers is found to be significantly smaller than that for bulk crystalline Ge because the magnitude of biaxial strain decreases in the Ge layers with added pressure and because the Grüneisen parameter of the confined mode is smaller than that of the Γ-point optical phonon. More generally, it is noted that the magnitude of biaxial strain in many strained layer superlattices initially decreases with the application of hydrostatic pressure, making the structures more stable.

scholarly journals RAMAN SCATTERING IN V3Si, V3Ge, Nb3Sb, AND Cr3Si : CORRELATION OF Eg OPTICAL PHONON LINEWIDTH WITH MAGNETIC SUSCEPTIBILITY

1981 ◽  
Vol 42 (C6) ◽  
pp. C6-392-C6-394 ◽  
Author(s):  
R. Merlin ◽  
S. B. Dierker ◽  
M. V. Klein ◽  
J. Jørgensen ◽  
S. R. Rasmussen ◽  
...  
Keyword(s):  
Magnetic Susceptibility ◽  
Raman Scattering ◽  
Optical Phonon ◽  
Phonon Linewidth

Intensity of theRRlongitudinal optical phonon branch for Raman scattering by solid HD

1989 ◽  
Vol 40 (14) ◽  
pp. 9863-9867 ◽  
Author(s):  
M. Ali ◽  
R. H. Tipping ◽  
J. D. Poll
Keyword(s):  
Raman Scattering ◽  
Optical Phonon ◽  
Phonon Branch ◽  
Solid Hd ◽  
Optical Phonon Branch

On Raman scattering from selected M2AC compounds

2007 ◽  
Vol 22 (10) ◽  
pp. 2651-2654 ◽  
Author(s):  
Oren D. Leaffer ◽  
Surojit Gupta ◽  
Michel W. Barsoum ◽  
Jonathan E. Spanier
Keyword(s):  
Raman Scattering ◽  
Optical Phonon ◽  
Density Functional ◽  
Scattering Spectra ◽  
Raman Scattering Spectra ◽  
The One ◽  
Ternary Carbides ◽  
Theoretical Simulations ◽  
Raman Active Phonon ◽  
Good Agreement

We report on the one-phonon Raman scattering spectra from the following M2AC MAX-phase ternary carbides: Ti2AlC, V2AlC, Cr2AlC, Nb2AlC, Ta2AlC, Ti2InC, Hf2InC, V2GeC, Cr2GeC, V2AsC, and Nb2AsC. We also report the results of calculations of the Γ-point, Raman-active phonon energies for these phases based on density functional theoretical simulations, including the effect of the k-point sampling on the convergence of phonon energies. Good agreement between all measured and calculated Γ-point Raman-active optical phonon energies is obtained.

Time-Resolved Coherent Anti-Stokes Raman Scattering of Graphene: Dephasing Dynamics of Optical Phonon

2017 ◽  
Vol 8 (17) ◽  
pp. 4108-4112 ◽  
Author(s):  
Juha Koivistoinen ◽  
Pasi Myllyperkiö ◽  
Mika Pettersson
Keyword(s):  
Raman Scattering ◽  
Optical Phonon ◽  
Time Resolved ◽  
Anti Stokes
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