Raman Study of Strain and Confinement Effects in Si/Ge Strained Layer Superlattices Under Hydrostatic Pressure

1991 ◽  
Vol 220 ◽  
Author(s):  
Zhifeng Sui ◽  
Irving P. Herman ◽  
Joze Bevk
Keyword(s):  
Hydrostatic Pressure ◽  
Raman Scattering ◽  
Optical Phonon ◽  
Phonon Frequency ◽  
Optical Phonons ◽  
Biaxial Strain ◽  
Strained Layer ◽  
Strained Layer Superlattice ◽  
Raman Study ◽  
Strained Layer Superlattices

ABSTRACTThe effects of strain and confinement on optical phonons in a Si12Ge4 strained layer superlattice grown by MBE on c-Si (001) were studied as a function of hydrostatic pressure (T = 295 K) using Raman scattering. The change of phonon frequency with pressure, dω/dP, for the principal quasi-confined LO mode in the Ge layers is found to be significantly smaller than that for bulk crystalline Ge because the magnitude of biaxial strain decreases in the Ge layers with added pressure and because the Grüneisen parameter of the confined mode is smaller than that of the Γ-point optical phonon. More generally, it is noted that the magnitude of biaxial strain in many strained layer superlattices initially decreases with the application of hydrostatic pressure, making the structures more stable.

Raman scattering from optical phonons inInAs1−xSbx/InAs strained-layer superlattices

1996 ◽  
Vol 54 (23) ◽  
pp. 16373-16376 ◽  
Author(s):  
L. Artús ◽  
R. A. Stradling ◽  
Y. B. Li ◽  
S. J. Webb ◽  
W. T. Yuen ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Optical Phonons ◽  
Strained Layer ◽  
Strained Layer Superlattices

scholarly journals The influence of atoms of second coordination sphere on phonon dispersion of diamond

2020 ◽  
pp. 111-113
Author(s):  
V. A. Sachkov ◽  
Keyword(s):  
Raman Scattering ◽  
Interaction Energy ◽  
Coordination Sphere ◽  
Phenomenological Model ◽  
Optical Phonon ◽  
Phonon Frequency ◽  
Phonon Dispersion ◽  
Longitudinal Optical ◽  
Optical Phonons ◽  
Second Coordination Sphere

Within the framework of the phenomenological model of twoparticle interaction, the effect of the interaction energy of atoms from the second coordination sphere on the phonon dispersion is considered. This approach makes it possible to vary the growth of the phonon frequency relative to the optical phonon in the center of the Brillun zone. The effects of the contribution to the Raman spectra from longitudinal optical phonons with frequencies higher than their frequency at the center of the Brillouin zone are discussed. The contribution to the frequency of interaction of atoms from the second coordination sphere for some phonons is obtained in an explicit form. The formulas obtained will be useful for calculating the spectra of Raman scattering of light by optical phonons localized in diamond nanocrystals

On the Existence of Multiple Equilibrium States in Strained-Layer Superlattices

1987 ◽  
Vol 103 ◽  
Author(s):  
William C. Johnson
Keyword(s):  
Free Energy ◽  
Equilibrium State ◽  
Stable Equilibrium ◽  
Multiple Equilibrium ◽  
Equilibrium Thermodynamic ◽  
Relative Thickness ◽  
Two Phase ◽  
Strained Layer ◽  
Strained Layer Superlattice ◽  
Strained Layer Superlattices

ABSTRACTUsing recent results from the thermodynamics of stressed solids, two-phase coexistence in a simple binary strained-layer superlattice is examined. We show that for a given temperature and overall composition of the superlattice, there can exist more than one linearly stable, equilibrium thermodynamic state. That is, there may exist several combinations of relative thickness of the phases and corresponding phase compositions that minimize the free energy of the system. The equilibrium state observed experimentally can, therefore, be influenced by the processing path.

Defect Reduction in GaAs Epilayers on Si Substrates Using Strained Layer Superlattices

1987 ◽  
Vol 91 ◽  
Author(s):  
N. El-Masry ◽  
N. Hamaguchi ◽  
J.C.L. Tarn ◽  
N. Karam ◽  
T.P. Humphreys ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Buffer Layers ◽  
Threading Dislocations ◽  
Defect Reduction ◽  
Strained Layer ◽  
Si Substrates ◽  
Density Of Dislocations ◽  
Strained Layer Superlattice ◽  
Strained Layer Superlattices

ABSTRACTInxGa11-xAs-GaAsl-yPy strained layer superlattice buffer layers have been used to reduce threading dislocations in GaAs grown on Si substrates. However, for an initially high density of dislocations, the strained layer superlattice is not an effective filtering system. Consequently, the emergence of dislocations from the SLS propagate upwards into the GaAs epilayer. However, by employing thermal annealing or rapid thermal annealing, the number of dislocation impinging on the SLS can be significantly reduced. Indeed, this treatment greatly enhances the efficiency and usefulness of the SLS in reducing the number of threading dislocations.

scholarly journals Type conversion under hydrostatic pressure in ZnSe-ZnS strained-layer superlattices

1991 ◽  
Vol 44 (4) ◽  
pp. 1801-1805 ◽  
Author(s):  
Yoichi Yamada ◽  
Yasuaki Masumoto ◽  
Tsunemasa Taguchi ◽  
Kenichi Takemura
Keyword(s):  
Hydrostatic Pressure ◽  
Type Conversion ◽  
Strained Layer ◽  
Strained Layer Superlattices

scholarly journals Resonant Raman scattering around theE0transition of AlAs/InAs strained-layer superlattices

1991 ◽  
Vol 44 (7) ◽  
pp. 3020-3024 ◽  
Author(s):  
G. Armelles ◽  
P. Castrillo ◽  
M. Recio ◽  
M. L. Sanjuán ◽  
J. Arriaga ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Strained Layer ◽  
Resonant Raman ◽  
Resonant Raman Scattering ◽  
Strained Layer Superlattices

Raman scattering in GaSb‐AlSb strained layer superlattices

1985 ◽  
Vol 46 (7) ◽  
pp. 678-680 ◽  
Author(s):  
B. Jusserand ◽  
P. Voisin ◽  
M. Voos ◽  
L. L. Chang ◽  
E. E. Mendez ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Strained Layer ◽  
Strained Layer Superlattices

scholarly journals The Growth of InAsSb/InGaAs Strained-Layer Superlattices by Metal-Organic Chemical Vapor Deposition

1993 ◽  
Vol 325 ◽  
Author(s):  
R. M. Biefeld ◽  
K. C. Baucom ◽  
S. R. Kurtz ◽  
D. M. Follstaedt
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermodynamic Model ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Strained Layer ◽  
Strained Layer Superlattice ◽  
Metal Organic ◽  
Strained Layer Superlattices ◽  
Organic Chemical Vapor Deposition

AbstractWe have grown InAsl-xSbx/Inl-yGayAs strained-layer superlattice (SLS) semiconductors lattice matched to InAs using a variety of conditions by metal-organic chemical vapor deposition. The V/III ratio was varied from 2.5 to 10 at a temperature of 475 °C, at pressures of 200 to 660 torr and growth rates of 3 - 5 A/s and layer thicknesses ranging from 55 to 152 Å. The composition of the InAsSb ternary can be predicted from the input gas molar flow rates using a thermodynamic model. At lower temperatures, the thermodynamic model must be modified to take account of the incomplete decomposition of arsine and trimethylantimony. Diodes have been prepared using Zn as the p-type dopant and undoped SLS as the n-type material. The diode was found to emit at 3.56 μm. These layers have been characterized by optical microscopy, SIMS, x-ray diffraction, and transmission electron diffraction. The optical properties of these SLS's were determined by infrared photoluminescence and absorption measurements.

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