2 to 23 GHz BiFET low noise amplifier design flow and implementations in 0.25 μm SiGe BiCMOS technology
2008 ◽
Vol 55
(1)
◽
pp. 59-68
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2005 ◽
Vol 40
(10)
◽
pp. 2092-2097
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2014 ◽
Vol 513-517
◽
pp. 4580-4584
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