2 to 23 GHz BiFET low noise amplifier design flow and implementations in 0.25 μm SiGe BiCMOS technology

2008 ◽  
Vol 55 (1) ◽  
pp. 59-68
Author(s):  
Thierry Taris ◽  
Cristian Pavão Moreira ◽  
Nicolas Seller ◽  
Jean-Baptiste Begueret ◽  
Eric Kerhervé ◽  
...  
Author(s):  
V.J. Patel ◽  
H.S. Axtell ◽  
C.L. Cerny ◽  
G.L. Creech ◽  
R.G. Drangmeister ◽  
...  

2005 ◽  
Vol 40 (10) ◽  
pp. 2092-2097 ◽  
Author(s):  
B. Welch ◽  
K.T. Kornegay ◽  
Hyun-Min Park ◽  
J. Laskar

2014 ◽  
Vol 513-517 ◽  
pp. 4580-4584
Author(s):  
Bing Liang Yu ◽  
Jin Li ◽  
Wen Yuan Li

A novel low-noise amplifier (LNA) suitable for COMPASS receiver applications is designed in SiGe-BiCMOS technology. Inductively degenerated technique and resistive feedback technique are employed to reduce the noise figure. With 1.8V power supply, the measured results achieve 17.23dB power gain and 2.58dB noise figure at 1.561GHz.


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