A Low Power SiGe-BiCMOS LNA for COMPASS Applications

2014 ◽  
Vol 513-517 ◽  
pp. 4580-4584
Author(s):  
Bing Liang Yu ◽  
Jin Li ◽  
Wen Yuan Li
Keyword(s):  
Low Power ◽  
Power Supply ◽  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Power Gain ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Resistive Feedback ◽  
Noise Amplifier

A novel low-noise amplifier (LNA) suitable for COMPASS receiver applications is designed in SiGe-BiCMOS technology. Inductively degenerated technique and resistive feedback technique are employed to reduce the noise figure. With 1.8V power supply, the measured results achieve 17.23dB power gain and 2.58dB noise figure at 1.561GHz.

scholarly journals A 0.18um CMOS Low Noise Amplifier for 3-5ghz UWB Receivers

2018 ◽  
Vol 7 (3.6) ◽  
pp. 84
Author(s):  
N Malika Begum ◽  
W Yasmeen
Keyword(s):  
Power Supply ◽  
Noise Figure ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Ultra Wideband ◽  
Noise Amplifier ◽  
5 Ghz ◽  
Chebyshev Filter ◽  
Minimum Noise

This paper presents an Ultra-Wideband (UWB) 3-5 GHz Low Noise Amplifier (LNA) employing Chebyshev filter. The LNA has been designed using Cadence 0.18um CMOS technology. Proposed LNA achieves a minimum noise figure of 2.2dB, power gain of 9dB.The power consumption is 6.3mW from 1.8V power supply.  

scholarly journals Design of Low Power UWB CMOS Low Noise Amplifier using Active Inductor for WLAN Receiver

2018 ◽  
Vol 7 (2.24) ◽  
pp. 448
Author(s):  
S Manjula ◽  
M Malleshwari ◽  
M Suganthy
Keyword(s):  
Low Power ◽  
Noise Figure ◽  
Wide Band ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Design System ◽  
Active Inductor ◽  
Chip Area ◽  
Noise Amplifier

This paper presents a low power Low Noise Amplifier (LNA) using 0.18µm CMOS technology for ultra wide band (UWB) applications. gm boosting common gate (CG) LNA is designed to improve the noise performance.  For the reduction of on chip area, active inductor is employed at the input side of the designed LNA for input impedance matching. The proposed UWB LNA is designed using Advanced Design System (ADS) at UWB frequency of 3.1-10.6 GHz. Simulation results show that the gain of 10.74+ 0.01 dB, noise figure is 4.855 dB, input return loss <-13 dB and 12.5 mW power consumption.  

A Full Integrated LNA in 0.18μm SiGe BiCMOS Technology

2013 ◽  
Vol 380-384 ◽  
pp. 3287-3291
Author(s):  
Bing Liang Yu ◽  
Xiao Ning Xie ◽  
Wen Yuan Li
Keyword(s):  
Wireless Local Area Network ◽  
Local Area Network ◽  
Noise Figure ◽  
Impedance Matching ◽  
Local Area ◽  
Low Noise ◽  
Area Network ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Noise Amplifier

A fully integrated low noise amplifier (LNA) for wireless local area network (WLAN) application is presents. The circuit is fabricated in 0.18μm SiGe BiCMOS technology. For the low noise figure, a feedback path is introduced into the traditional inductively degenerated common emitter cascade LNA, which decreases the inductance for input impedance matching, therefore reduces the thermal noise caused by loss resistor. Impedance matching and noise matching are achieved at the same time. Measured results show that the resonance point of the output resonance network shifts from 2.4GHz to 2.8GHz, due to the parasitic effects at the output. At the frequency of 2.8GHz, the LNA achieves 2.2dB noise figure, 19.4dB power gain. The core circuit consumes only 13mW from a 1.8V supply and occupies less than 0.5mm2.

X-band low noise amplifier using SiGe BiCMOS technology

2005 ◽  
Author(s):  
V.J. Patel ◽  
H.S. Axtell ◽  
C.L. Cerny ◽  
G.L. Creech ◽  
R.G. Drangmeister ◽  
...  
Keyword(s):  
Low Noise ◽  
Low Noise Amplifier ◽  
X Band ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Noise Amplifier

scholarly journals Design And Analysis Of CMOS Low Noise Amplifier Circuit For 5-GHz Cascode and Folded Cascode In 180nm Technology

2018 ◽  
Vol 7 (3) ◽  
pp. 143
Author(s):  
T. Kanthi ◽  
D. Sharath Babu Rao
Keyword(s):  
Noise Figure ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Common Source ◽  
Power Gain ◽  
Amplifier Circuit ◽  
Folded Cascode ◽  
Noise Amplifier ◽  
5 Ghz

This paper is about Low noise amplifier topologies based on 0.18µm CMOS technology. A common source stage with inductive degeneration, cascode stage and folded cascode stage is designed, simulated and the performance has been analyzed. The LNA’s are designed in 5GHz. The LNA of cascode stage of noise figure (NF) 2.044dB and power gain 4.347 is achieved. The simulations are done in cadence virtuoso spectre RF.

A Low Noise Amplifier with 1.1dB Noise Figure and +17dBm OIP3 for GPS RF Receivers

2013 ◽  
Vol 336-338 ◽  
pp. 1490-1495
Author(s):  
Yong Xiang ◽  
Yan Bin Luo ◽  
Ren Jie Zhou ◽  
Cheng Yan Ma
Keyword(s):  
Noise Figure ◽  
Impedance Matching ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Gain Compression ◽  
Sige Hbt ◽  
Current Consumption ◽  
Sige Bicmos ◽  
Noise Amplifier ◽  
Feedback Resistor

A 1.575GHz SiGe HBT(heterojunction bipolar transistor) low-noise-amplifier(LNA) optimized for Global Positioning System(GPS) L1-band applications was presented. The designed LNA employed a common-emitter topology with inductive emitter degeneration to simultaneously achieve low noise figure and input impedance matching. A resistor-bias-feed circuit with a feedback resistor was designed for the LNA input transistor to improve the gain compression and linearity performance. The LNA was fabricated in a commercial 0.18µm SiGe BiCMOS process. The LNA achieves a noise figure of 1.1dB, a power gain of 19dB, a input 1dB compression point(P1dB) of -13dBm and a output third-order intercept point(OIP3) of +17dBm at a current consumption of 3.6mA from a 2.8V supply.

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