scholarly journals A new class of optimal 3-splitting authentication codes

2007 ◽  
Vol 45 (3) ◽  
pp. 391-391
Author(s):  
Jinhua Wang
2018 ◽  
Vol 18 (5) ◽  
pp. 87-94
Author(s):  
Stela Zhelezova

Abstract The (v, u×c, λ)-splitting balanced incomplete block designs correspond to c-splitting authentication codes. We classify splitting balanced incomplete block designs with definite parameters.


2021 ◽  
Vol 0 (0) ◽  
pp. 0
Author(s):  
Maura B. Paterson ◽  
Douglas R. Stinson

<p style='text-indent:20px;'>A splitting BIBD is a type of combinatorial design that can be used to construct splitting authentication codes with good properties. In this paper we show that a design-theoretic approach is useful in the analysis of more general splitting authentication codes. Motivated by the study of algebraic manipulation detection (AMD) codes, we define the concept of a <i>group generated</i> splitting authentication code. We show that all group-generated authentication codes have perfect secrecy, which allows us to demonstrate that algebraic manipulation detection codes can be considered to be a special case of an authentication code with perfect secrecy.</p><p style='text-indent:20px;'>We also investigate splitting BIBDs that can be "equitably ordered". These splitting BIBDs yield authentication codes with splitting that also have perfect secrecy. We show that, while group generated BIBDs are inherently equitably ordered, the concept is applicable to more general splitting BIBDs. For various pairs <inline-formula><tex-math id="M1">\begin{document}$ (k, c) $\end{document}</tex-math></inline-formula>, we determine necessary and sufficient (or almost sufficient) conditions for the existence of <inline-formula><tex-math id="M2">\begin{document}$ (v, k \times c, 1) $\end{document}</tex-math></inline-formula>-splitting BIBDs that can be equitably ordered. The pairs for which we can solve this problem are <inline-formula><tex-math id="M3">\begin{document}$ (k, c) = (3, 2), (4, 2), (3, 3) $\end{document}</tex-math></inline-formula> and <inline-formula><tex-math id="M4">\begin{document}$ (3, 4) $\end{document}</tex-math></inline-formula>, as well as all cases with <inline-formula><tex-math id="M5">\begin{document}$ k = 2 $\end{document}</tex-math></inline-formula>.</p>


Author(s):  
Frances M. Ross ◽  
Peter C. Searson

Porous semiconductors represent a relatively new class of materials formed by the selective etching of a single or polycrystalline substrate. Although porous silicon has received considerable attention due to its novel optical properties1, porous layers can be formed in other semiconductors such as GaAs and GaP. These materials are characterised by very high surface area and by electrical, optical and chemical properties that may differ considerably from bulk. The properties depend on the pore morphology, which can be controlled by adjusting the processing conditions and the dopant concentration. A number of novel structures can be fabricated using selective etching. For example, self-supporting membranes can be made by growing pores through a wafer, films with modulated pore structure can be fabricated by varying the applied potential during growth, composite structures can be prepared by depositing a second phase into the pores and silicon-on-insulator structures can be formed by oxidising a buried porous layer. In all these applications the ability to grow nanostructures controllably is critical.


Sign in / Sign up

Export Citation Format

Share Document