Selective Etching of Sr-Modified and Directionally Solidified Industrial Al–Si Eutectic Alloys for Fabricating Fibrous Eutectic Si

In order to fabricate fibrous eutectic Si, the selective etching of industrial Al–Si eutectic alloys directionally solidified at different growth rates and modified by different amounts of Sr was studied. Flake eutectic and fibrous Si were obtained by selective etching of non-modified, Sr-modified or directionally solidified Al–Si eutectic alloys. The optimal amount of Sr for fabricating branching eutectic Si was 0.04–0.07%. Through directional solidification with a high enough growth rate (more than 200 μm/s), lamellar eutectic Si transforms to fibrous eutectic Si for use in non-modified Al–Si eutectic alloys. The potentiodynamic polarization and cyclic voltammetry methods were used to test the corrosion behavior of non-modified and Sr-modified Al–Si eutectic alloys. With a constant potential of 0.5 V in HCl solution, non-modified Al–Si eutectic alloys displayed initial pitting corrosion and subsequent spalling corrosion, and 0.04% Sr-modified samples displayed uniform pitting corrosion. Compared with non-modified Al–Si eutectic alloys, Sr-modified samples displayed better corrosion resistance with lower current density and shallower pit depth during the same etching conditions.

A Selective Etching Route for Large-Scale Fabrication of β-Ga2O3 Micro-/Nanotube Arrays

In this paper, based on the different etching characteristics between GaN and Ga2O3, large-scale and vertically aligned β-Ga2O3 nanotube (NT) and microtube (MT) arrays were fabricated on the GaN template by a facile and feasible selective etching method. GaN micro-/nanowire arrays were prepared first by inductively coupled plasma (ICP) etching using self-organized or patterning nickel masks as the etching masks, and then the Ga2O3 shell layer converted from GaN was formed by thermal oxidation, resulting in GaN@Ga2O3 micro-/nanowire arrays. After the GaN core of GaN@Ga2O3 micro-/nanowire arrays was removed by ICP etching, hollow Ga2O3 tubes were obtained successfully. The micro-/nanotubes have uniform morphology and controllable size, and the wall thickness can also be controlled with the thermal oxidation conditions. These vertical β-Ga2O3 micro-/nanotube arrays could be used as new materials for novel optoelectronic devices.

Quantitative Description of Duplex Stainless Steels Microstructure Using Selective Etching

The properties of duplex stainless steels (DSSs) depend on the ferrite–austenite ratio, on the content of secondary phases and on the contamination with non-metallic inclusions. To assess the quality of DSSs, it is necessary to use an integrated approach which includes controlling for the volume fraction, the morphology and the distribution of all phases and non-metallic inclusions. Samples of several grades of DSSs were obtained using various heat treatments, such as solution annealing and quenching from 1050 to 1250 °C to obtain different amounts of ferrite and to provoke annealing at 850 °C to precipitate σ-phase. As a result, a metallographic technique of phase analysis in DSSs based on selective etching and subsequent structure parameters estimation according to ASTM E1245 was developed. We demonstrated that the developed method of quantitative analysis based on selective etching and metallographic analysis according to ASTM E1245 allows us to obtaining much more accurate results, compared to the point count method described in ASTM E562 and to the XRD method.

SINGLE PASS CLEAVING OF ULTRAFAST LASER MODIFIED C-SHAPED GLASS EDGES

We report on single-pass laser cleaving of transparent materials with C-shaped edges that exhibit 45-deg tangential angles to the surface. A holographic 3D beam splitter distributes several foci along the desired edge contours, including C-shaped edges. Single-pass, full thickness laser modifications are achieved requiring single-side access to the workpiece only without inclining the optical head. After having induced laser modifications with feed rates in the order of 100 mm/s actual separation is performed using a selective etching strategy.