scholarly journals Negative differential resistance in graphene-nanoribbon–carbon-nanotube crossbars: a first-principles multiterminal quantum transport study

2013 ◽  
Vol 12 (4) ◽  
pp. 542-552 ◽  
Author(s):  
Kamal K. Saha ◽  
Branislav K. Nikolić
Keyword(s):  
Carbon Nanotube ◽  
Quantum Transport ◽  
First Principles ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Graphene Nanoribbon ◽  
Transport Study

Negative differential resistance, perfect spin-filtering effect and tunnel magnetoresistance in vanadium-doped zigzag blue phosphorus nanoribbons

2018 ◽  
Vol 20 (32) ◽  
pp. 21105-21112 ◽  
Author(s):  
Si-Cong Zhu ◽  
Shun-Jin Peng ◽  
Kai-Ming Wu ◽  
Cho-Tung Yip ◽  
Kai-Lun Yao ◽  
...  
Keyword(s):  
Transport Properties ◽  
Quantum Transport ◽  
First Principles ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Tunnel Magnetoresistance ◽  
Filtering Effect ◽  
Spin Filtering

We investigate the electronic and transport properties of vanadium-doped zigzag blue phosphorus nanoribbons by first-principles quantum transport calculations.

A first-principles study of the spin transport properties of a 4H-TAHDI-based multifunctional spintronic device with graphene nanoribbon electrodes

2014 ◽  
Vol 2 (32) ◽  
pp. 6648-6654 ◽  
Author(s):  
P. Zhao ◽  
Q. H. Wu ◽  
H. Y. Liu ◽  
D. S. Liu ◽  
G. Chen
Keyword(s):  
Transport Properties ◽  
First Principles ◽  
Negative Differential Resistance ◽  
Giant Magnetoresistance ◽  
Spin Transport ◽  
Differential Resistance ◽  
Graphene Nanoribbon ◽  
Spintronic Device ◽  
First Principles Study ◽  
Spin Filtering

The 4H-TAHDI-based spintronic device can exhibit perfect giant magnetoresistance, spin-filtering, bipolar spin-rectifying, and negative differential resistance effects simultaneously.

CHARGE TRANSPORT THROUGH CARBON NANOTUBE OR FULLERENE–MOLECULE–SILICON JUNCTIONS

NANO ◽  
2007 ◽  
Vol 02 (05) ◽  
pp. 285-294
Author(s):  
FU-REN F. FAN ◽  
BO CHEN ◽  
AUSTEN K. FLATT ◽  
JAMES M. TOUR ◽  
ALLEN J. BARD
Keyword(s):  
Carbon Nanotube ◽  
Charge Transport ◽  
Electron Acceptor ◽  
Negative Differential Resistance ◽  
Fullerene Molecule ◽  
Differential Resistance ◽  
Electron Donors ◽  
Switching Behavior ◽  
Current Voltage ◽  
Bistable Switching

We report here the current–voltage (i–V) characteristics of several (n++- Si /MNOPE/ C 60/ Pt -tip) or (n++- Si /MNOPE/SWCNT/ Pt -tip) junctions, where MNOPE = 2'-mononitro-4, 4'-bis(phenylethynyl)-1-phenylenediazonium and SWCNT = single wall carbon nanotube. A layer of C 60 or SWCNT-derivatized MNOPE has strong effect on the i–V behavior of the junctions, including rectification, negative differential resistance (NDR) and switching behaviors. The i–V curve of a grafted molecular monolayer (GMM) of MNOPE atop n++- Si shows NDR behavior, whereas those of C 60- and SWCNT-derivatized GMMs of MNOPE on n++- Si show strong rectifying behavior with opposite rectification polarities. With C 60, larger currents were found with negative tip bias, while with SWCNT, the forward top bias was positive. Because C 60 tends to be a good electron acceptor and SWCNTs tend to be good electron donors, they show different i–V behavior, as observed. Some of the (n++- Si /MNOPE/SWCNT/ Pt -tip) junctions also show reversible bistable switching behavior.

Redox-Mediated Negative Differential Resistance Behavior from Metalloproteins Connected through Carbon Nanotube Nanogap Electrodes

2007 ◽  
Vol 129 (36) ◽  
pp. 11018-11019 ◽  
Author(s):  
Qun Tang ◽  
Hye Kyung Moon ◽  
Yoonmi Lee ◽  
Seok Min Yoon ◽  
Hyun Jae Song ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Nanogap Electrodes
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