AbstractCrack free 10-μm-thick Pb1.1(Zr0.53Ti0.47)O3 (PZT) films were successfully fabricated using a chemical solution deposition process, and the ferroelectric and displacement properties were evaluated. A 0.5 M PZT precursor solution was prepared from trihydrated lead acetate, titanium iso-propoxide, zirconium n-propoxide, and 2-methoxyethanol as the solvent. The process of spin coating and pyrolysis at 500 °C was repeated five times, and then the precursor films were fired at 700 °C for 5 min. This sequence was repeated 30 times. Finally, the films were fired at 700 °C for 10 min. The fabricated crack-free PZT thick films showed (100) preferred orientation. A flat surface and dense microstructure was observed. The electrical properties were comparable with the bulk PZT ceramics. The dielectric constant and dissipation factor were εr = 1453 and tan δ = 0.039, and the remnant polarization and coercive field were Pr = 25 μC/cm2 and Ec = 30 kV/cm, respectively. Field-induced displacement of the films was measured using an atomic force microscope (AFM) with and without a top electrode using a contact mode.
PZT thick films by diol chemical solution deposition