Enhanced ferroelectric properties in Aurivillius PbxBi6−xFe0.5Co0.5Ti4O18 thin films prepared by chemical solution deposition

Ferroelectric SrBi2Ta2O9 (SBT) thin films on Pt/ZrO2/SiO2/Si were successfully prepared by using an alkanolamine-modified chemical solution deposition method. It was observed that alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature and were strongly correlated with the ferroelectric properties of the SBT thin films. The films annealed at 800 °C exhibited low leakage current density, low voltage saturation, high remanent polarization, and good fatigue characteristics at least up to 1010 switching cycles, indicating favorable behavior for memory applications.

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Fabrication of V-Substituted (Bi,M)4Ti3O12 [M = Lanthanoids] Thin Films by Chemical Solution Deposition Method

MRS Proceedings ◽

10.1557/proc-688-c2.3.1 ◽

2001 ◽

Vol 688 ◽

Cited By ~ 2

Author(s):

H. Uchida ◽

H. Yoshikawa ◽

I. Okada ◽

H. Matsuda ◽

T. Iijima ◽

...

Keyword(s):

Thin Films ◽

Chemical Solution Deposition ◽

Bismuth Titanate ◽

Ferroelectric Properties ◽

Ferroelectric Materials ◽

Processing Temperature ◽

Chemical Solution ◽

Si Substrate ◽

Solution Deposition ◽

Chemical Solution Deposition Method

AbstractBismuth titanate (Bi4Ti3O12; BIT) -based ferroelectric materials are proposed from the view of the “Site-engineering”, where the Bi-site ions are substituted by lanthanoid ions (La3+ and Nd3+) and Ti-site ions by other ions with higher charge valence (V5+). In the present study, influences of vanadium (V) - substitution for (Bi,M)4Ti3O12 thin films [M = lanthanoid] on the ferroelectric properties are evaluated. V-substituted (Bi,M)4Ti3O12 films have been fabricated using a chemical solution deposition (CSD) technique on the (111)Pt/Ti/SiO2/(100)Si substrate. Remnant polarization of (Bi,La)4Ti3O12 and (Bi,Nd)4Ti3O12 films has been improved by the V-substitution independent of the coercive field. The processing temperature of BLT and BNT films could also be lowered by the V-substitution.

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Large Piezoresponse and Ferroelectric Properties of (Bi0.5 Na0.5 )TiO3 -(Bi0.5 K0.5 )TiO3 -Bi(Mg0.5 Ti0.5 )O3 Thin Films Prepared by Chemical Solution Deposition

Journal of the American Ceramic Society ◽

10.1111/jace.12279 ◽

2013 ◽

Vol 96 (7) ◽

pp. 2172-2178 ◽

Cited By ~ 26

Author(s):

Yu Hong Jeon ◽

Eric A. Patterson ◽

David P. Cann ◽

Peter Mardilovich ◽

William Stickel ◽

...

Keyword(s):

Thin Films ◽

Chemical Solution Deposition ◽

Ferroelectric Properties ◽

Chemical Solution ◽

Solution Deposition

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Influence of Excess Potassium on Structural and Ferroelectric Properties of Lead-Free Bi0.5K0.5TiO3 Thin Films

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2021.19117 ◽

2021 ◽

Vol 21 (4) ◽

pp. 2681-2686

Author(s):

Nguyen Ngoc Minh ◽

Bui Van Dan ◽

Nguyen Duc Minh ◽

Guus Rijnders ◽

Ngo Duc Quan

Keyword(s):

Thin Films ◽

Chemical Solution Deposition ◽

Single Phase ◽

Ferroelectric Properties ◽

Lead Free ◽

Chemical Solution ◽

Ferroelectric Films ◽

Solution Deposition ◽

Si Substrates ◽

Excess Amount

Lead-free Bi0.5K0.5TiO3 (BKT) ferroelectric films were synthesized on Pt/Ti/SiO2/Si substrates via the chemical solution deposition. The influence of the excess potassium on the microstructures and the ferroelectric properties of the films was investigated in detail. The results showed that the BKT films have reached the well-crystallized state in the single-phase perovskite structure with 20 mol.% excess amount of potassium. For this film, the ferroelectric properties of the films were significantly enhanced. The remnant polarization (Pr) and maximum polarization (Pm) reached the highest values of 9.4 μC/cm2 and 32.2 μC/cm2, respectively, under the electric field of 400 kV/cm.

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