Study of PVDF/ (Co-ZnFe2O4 and Cu-ZnFe2O4) nanocomposite for the piezo-phototronics applications

Polyvinylidene fluoride (PVDF) polymer is considered as a promising piezoelectric material whose optical properties need to be improved. Zinc ferrite is an excellent photoelectric material, in the present work it was doped separately by both cobalt and copper. Co-ZnFe2O4 and Cu-ZnFe2O4 nanoparticles were synthesized and characterized to be used as PVDF fillers, aiming to improve its optical properties. The optical properties as well as, the piezoelectric response of the prepared PVDF/ (Co-ZnFe2O4 and Cu-ZnFe2O4) nanocomposites were investigated. A remarkable improvement in the PVDF relative permittivity, optical conductivity, refractive index, non-linear susceptibility, and a great reduction in the band gap energy value is obtained by adding Co-ZnFe2O4 nanoparticles to it. However, Cu-ZnFe2O4 nanoparticles have limited improvement of the PVDF optical properties compared to the Co-ZnFe2O4 nanoparticles. The piezoelectric response of the PVDF polymer is clearly increased by the addition of both Co-ZnFe2O4 and Cu-ZnFe2O4 nanoparticles.

Enhanced Piezoresponse and Dielectric Properties for Ba1-XSrXTiO3 Composition Ultrathin Films by the High-Throughput Method

The stacked single-unit cell Ba1-xSrxTiO3 (BSTO) thin film designed by the high-throughput method is fabricated by layer-by-layer deposition by laser molecular beam epitaxy, and its ferroelectric and dielectric characteristics as a function of Sr concentration are comprehensively investigated. The permittivity of BSTO exhibits a monotonous increase by Sr with a plateau in the region of 14% < Sr < 85%. Meanwhile, at the low Sr doping regime, the piezoelectric response has been discovered, and the maximum piezoresponse and d33 can reach approximately 139.05 pm and 88 pm/V once an appropriate Ba/Sr ratio is formed, exhibiting a coexistence of a dielectric property and giant piezoresponse. This effective piezoelectric constant d33 value is significantly larger than the conventional chemical doping scenarios, suggesting that the intra-plane interaction is crucial for designing future promising dielectric and ferroelectric thin films via high-throughput technologies.

Piezoelectric response of aligned carbon nanotubes depending on sublayer material

The results of experimental studies of the effect of the sublayer material on the piezoelectric response and sensitivity to mechanical deformations of aligned carbon nanotubes (CNTs) are presented. It is shown that the highest piezoelectric response (136 nA at a pressing force of 4 μN) and best sensitivity are demonstrated by CNTs grown on a Mo sublayer. This dependence is probably due to the geometric parameters of CNTs and the structure of the CNT array as a whole. The results obtained can be used to develop energy-efficient nanogenerators based on CNT arrays.

Piezoelectricity in hafnia

Because of its compatibility with semiconductor-based technologies, hafnia (HfO2) is today’s most promising ferroelectric material for applications in electronics. Yet, knowledge on the ferroic and electromechanical response properties of this all-important compound is still lacking. Interestingly, HfO2 has recently been predicted to display a negative longitudinal piezoelectric effect, which sets it apart from classic ferroelectrics (e.g., perovskite oxides like PbTiO3) and is reminiscent of the behavior of some organic compounds. The present work corroborates this behavior, by first-principles calculations and an experimental investigation of HfO2 thin films using piezoresponse force microscopy. Further, the simulations show how the chemical coordination of the active oxygen atoms is responsible for the negative longitudinal piezoelectric effect. Building on these insights, it is predicted that, by controlling the environment of such active oxygens (e.g., by means of an epitaxial strain), it is possible to change the sign of the piezoelectric response of the material.

Janus MSiGeN4 (M = Zr and Hf) monolayers derived from centrosymmetric β-MA2Z4: A first-principles study

A two-dimensional (2D) MA2Z4 family with and phases has been attracting tremendous interest, the MoSi2N4 and WSi2N4 of which have been successfully fabricated ( Science 369, 670 (2020)). Janus monolayers have been achieved in many 2D families, so it is interesting to construct a Janus monolayer from the MA2Z4 family. In this work, Janus MSiGeN4 (M = Zr and Hf) monolayers are predicted from -MA2Z4, which exhibit dynamic, mechanical and thermal stabilities. It is found that they are indirect band-gap semiconductors by using generalized gradient approximation (GGA) plus spin-orbit coupling (SOC). With biaxial strain from 0.90 to 1.10, the energy band gap shows a nonmonotonic behavior due to a change of conduction band minimum (CBM). A semiconductor to metal transition can be induced by both compressive and tensile strains, and the phase transformation point is about 0.96 for compressive strain and 1.10 for tensile strain. The tensile strain can change the positions of CBM and valence band maximum (VBM), and can also induce the weak Rashba-type spin splitting near CBM. For MSiGeN4 (M = Zr and Hf) monolayers, both an in-plane and out-of-plane piezoelectric response can be produced, when a uniaxial strain in the basal plane is applied, which reveals the potential as piezoelectric 2D materials. The high absorption coefficients in the visible light region suggest that MSiGeN4 (M = Zr and Hf) monolayers have potential photocatalytic applications. Our works provide an idea to achieve a Janus structure from the MA2Z4 family, and can hopefully inspire further research exploring Janus MA2Z4 monolayers.

Fabrication and calibration of nanostructured Vanadium-doped ZnO-based micromachined sensor with superior sensitive for underwater acoustic measurement

A high-performance micromachined piezoelectric sensor based nanostructured Vanadium-doped Zinc oxide (ZnO) film with air-backing has been developed and characterized for underwater acoustic application. The sensing cell with a low foot-print of 2.0 mm × 2.0 mm is fabricated by MEMS technology using a ZnO-on-SOI process platform. An optimal ratio of piezoelectric coefficient to the relative permittivity is obtained about 6.3 in the Zn0.98V0.02O sensing cell, improving by an order of magnitude compared with other notable piezoelectric films, plays a mainly dominant role in the enhanced piezoelectric response. Calibrations in the standard underwater instrument have demonstrated that the presented sensor could achieve an acoustic pressure sensitivity of −165 ± 2 dB (Ref. 1 V/μPa) over a bandwidth 10 Hz to 10 kHz, outperforming the same kind of reported devices. The maximum non-linearity is no more than 0.3% and the sensitivity variation is no more than ± 0.7 dB in the temperature range from 10℃ to 50 ℃ indicating a better stability and higher reliability. The proposed sensor with a superior acoustic sensitivity gives a great application potential in underwater acoustic measurements.

Ferromagnetic 1H-LaBr2 monolayer: a promising 2D piezoelectric

The discovery of two dimensional (2D) materials that have excellent piezoelectric response along with intrinsic magnetism is promising for nanoscale multifunctional piezoelectric or spintronic devices. Piezoelectricity requires non-centrosymmetric structures with an electric band-gap, whereas magnetism demands broken time-reversal symmetry. Most of the well-known 2D piezoelectric materials – e.g., 1H-MoS2 monolayer – are not magnetic. Being intrinsically magnetic, semiconducting 1H-LaBr2and 1H-VS2 monolayers can combine magnetism and piezoelectricity. We compare piezoelectric properties of 1H-MoS2, 1H-VS2 and 1H-LaBr2 using density functional theory. Our results show that ferromagnetic 1H-LaBr2 2D monolayer displays a larger piezoelectric strain co-efficient (d_{11}= -4.527 pm/V, which is close to d_{11}= 4.104 pm/V of 1H-VS2 monolayer) compared to that of well-known 1H-MoS2 monolayer (d_{11}= 3.706 pm/V), while 1H-MoS2 monolayer has a larger piezoelectric stress co-efficient (e_{11}= 370.675 pC/m) than the 1H-LaBr2 monolayer (e_{11}= -94.175 pC/m, which is also lower than e_{11}= 298.100 pC/m of 1H-VS2 monolayer). These in-plane piezoelectric d_{11} coefficients are quite comparable with piezo-response of bulk wurtzite nitrides – e.g., d_{33} of GaN is about 3.1 pm/V. The large d_{11} for 1H-LaBr2 monolayer originates from the low elastic constants, C_{11}= 30.338 N/m and C_{12} = 9.534 N/m. Interestingly, the sign of the piezoelectric co-coefficients for 1H-LaBr2 monolayer is different to that of the 1H-MoS2 or 1H-VS2 monolayers. The negative sign arises from the negative ionic contribution of e_{11}, which dominates in the 1H-LaBr2 monolayer, whereas the electronic part of e_{11} dominates in 1H-MoS2 and 1H-VS2. Furthermore, we explain the origin of this large ionic contribution of e_{11} for 1H-LaBr2 in terms of the Born effective charges (Z_{11}) and the sensitivity of the atomic positions to the strain (\frac{du}{d\eta}). Surprisingly, we observe a sign reversal in the Z_{11} of Mo and S compared to the nominal oxidation states, which makes both the electronic and ionic parts of e_{11} positive, and results in the high value of e_{11}. Additionally, our interatomic bond analysis using crystal orbital Hamilton populations indicates that the weaker covalent bond in 1H-LaBr2 monolayer is responsible for large \frac{du}{d\eta} and elastic softening (lower elastic constants).

Defects-assisted piezoelectric response in liquid exfoliated MoS2 nanosheets

MoS2 is an intrinsic piezoelectric material which offers applications such as energy harvesting, sensors, actuators, flexible electronics, energy storage and more. Surprisingly, there are not any suitable, yet economical methods that can produce quality nanosheets of MoS2 in large quantities, hence limiting the possibility of commercialisation of its applications. Here, we demonstrate controlled synthesis of highly crystalline MoS2 nanosheets via liquid phase exfoliation of bulk MoS2, following which we report piezoelectric response from the exfoliated nanosheets. The method of piezo force microscopy (PFM) was employed to explore the piezo response in mono, bi, tri and multilayers of MoS2 nanosheets. The effective piezoelectric coefficient of MoS2 varies from 9.6 pm/V to 25.14 pm/V. We attribute piezoelectric response in MoS2 nanosheets to the defects formed in it during the synthesis procedure. The presence of defects is confirmed by X-ray photoelectron spectroscopy (XPS).