Growth and characterization of stilbene doped bibenzyl scintillator crystal by solution growth technique

2018 ◽  
Vol 29 (12) ◽  
pp. 10480-10486 ◽  
Author(s):  
Narayanan Durairaj ◽  
Sivaperuman Kalainathan
2010 ◽  
Vol 645-648 ◽  
pp. 33-36 ◽  
Author(s):  
Nobuyoshi Yashiro ◽  
Kazuhiko Kusunoki ◽  
Kazuhito Kamei ◽  
Akihiro Yauchi

The stable long time growth with the use of Si -C-Ti ternary solution was realized by improving the thermal condition during the growth. We have succeeded in obtaining a maximum 10 mm thick bulk 6H-SiC crystal, which is the largest bulk crystal ever obtained by the solution growth technique. The obtained crystal was free of cracks and exhibited a homogeneous light green color. The crystallinity of the grown crystal was characterized by X-ray rocking curve measurements using (0006) reflection and by the molten KOH etching. The mapping of the full width at half maximum (FWHM) revealed the average FWHM around 30 arc seconds and the minimal FWHM under 16 arc seconds. The etch pit density (EPD) was typically in the range between 104 and 105 cm-2, which was comparable to that of the crystal seed.


2013 ◽  
Vol 64 (2) ◽  
pp. 20201 ◽  
Author(s):  
V. Chithambaram ◽  
S. Jerome Das ◽  
Sivakumar Krishnan ◽  
M. Basheer Ahamed ◽  
R. Arivudai Nambi

2007 ◽  
Vol 436 (1-2) ◽  
pp. 400-406 ◽  
Author(s):  
S.D. Chavhan ◽  
S.V. Bagul ◽  
R.R. Ahire ◽  
N.G. Deshpande ◽  
A.A. Sagade ◽  
...  

CrystEngComm ◽  
2014 ◽  
Vol 16 (20) ◽  
pp. 4183-4193 ◽  
Author(s):  
Rajaboopathi Mani ◽  
Krishnakumar Varadharajan ◽  
Marjatta Louhi-Kultanen

A superstructure was formed on form I of 6-chloro-2, 4-dinitroaniline crystals. It was observed using a slow evaporation solution growth technique and crystals grown from slow evaporation of the filtrate in anti-solvent precipitation. The thickness of 2D petals in the superstructure is about 100 nm.


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