Controlled Growth of Indium Selenides by High-Pressure and High-Temperature Method

The controlled growth of indium selenides has attracted considerable research interests in condensed matter physics and materials science yet remains a challenge due to the complexity of the indium–selenium phase diagram. Here, we demonstrate the successful growth of indium selenides in a controllable manner using the high-pressure and high-temperature growth technique. The γ-InSe and α-In2Se3 crystals with completely different stoichiometries and stacking manner of atomic layers have been controlled grown by subtle tuning growth temperature, duration time, and growth pressure. The as-grown γ-InSe crystal features a semiconducting property with a prominent photoluminescence peak of ∼1.23 eV, while the α-In2Se3 crystal is ferroelectric. Our findings could lead to a surge of interest in the development of the controlled growth of high-quality van der Waal crystals using the high-pressure and high-temperature growth technique and will open perspectives for further investigation of fascinating properties and potential practical application of van der Waal crystals.

Спектроскопическое исследование структурных и магнитных свойств TbCr-=SUB=-3-=/SUB=-(BO-=SUB=-3-=/SUB=-)-=SUB=-4-=/SUB=-

The paper presents a flux crystal growth technique, studies of the structural peculiarities and the optical absorption spectra of double orthoborate TbCr3(BO3)4 with a huntite structure. The intensities of the phonon modes were used to determine the ratios of the rhombohedral and monoclinic polytypes for this compound, depending on the growth conditions. The broadband absorption spectra of the Tb3+ ions in TbCr3(BO3)4 single crystals were studied in the temperature range from room temperature to 3.0 K. From them, the energies of the crystal-field levels of the Tb3+ ion were determined. The temperature dependence of the absorption spectra of the Er3+ probe ion in TbCr3(BO3)4:Er(1%) shows that there are two phase transitions and agrees with their previously proposed interpretation: at 8.8 K, the chromium subsystem antiferromagnetically orders, and at 5 K, a reorientation of chromium magnetic moments occurs.

Nanocomposite Material Synthesized Via Horizontal Vapor Phase Growth Technique: Evaluation and Application Perspective

The synthesis of nanomaterials has been reported by many researchers using different methods. One of the methods that can be used with perfect pureness and have less pollution in the synthesized materials results is the vapor phase growth technique (VPGT). Several types of nano shapes materials were reported such as nanoparticles, nanorods, nano triangular, nanosphere, and nanocrystal. The synthesis method has a fundamental process where the nanomaterials evaporated and condensed based on the temperature difference. There are three important variables, i.e., stochiometric ratio of source materials, temperature and baking time. The synthesis was occured in the quartz tube and sealed in the vacuum condition. This create the material was synthesis in pure and isolated conditions. The application of the nanomaterials synthesized via Horizontal Vapor Phase Growth (HVPG) can be implemented in anti-pathogen, anti-bacterial, gas sensing and coating applications.

Optical and structural properties of the GaAs heterostructures grown using AlGaAs superlattice buffer layer on compliant Si(100) substrates with the preformed porous-Si (por-Si) layer.

360 nm and 700 nm thick GaAs layers were grown by MO MOCVD growth technique directly on compliant Si (100) substrate and on supper-lattice (SL) AlGaAs buffer layer. The XRD study revealed better structural quality for the sample grown on SL / por-Si buffer. AFM study revealed a smoother sample surface with blocks of more regular rectangular shape and larger size as well. Photoluminescence spectra of the samples revealed an energy shift of PL maximum intensity for both samples. Sample grown on SL buffer also showed higher PL intensity corresponding to better crystalline perfection.

Synthesis and structural characterization of Fe1-xMexBO3 (Me = Al, Sc) single crystals

Fe1-xMexBO3 (Me = Al, Sc) single crystals have been synthesized by flux growth technique using B2O3-PbO-PbF2 solvent and approach of identical synthesis conditions. The contents of the diamagnetic ions Me in the initial charge of both compositions were equal, xcharge=0.05. The exact contents and crystal lattice parameters of the synthesized crystals were determined by X-ray fluorescence analysis and X-ray diffraction, respectively.

High-sensitivity of initial SrO growth on the residual resistivity in epitaxial thin films of SrRuO$$_3$$ on SrTiO$$_3$$ (001)

The growth of SrRuO$$_3$$ 3 (SRO) thin film with high-crystallinity and low residual resistivity (RR) is essential to explore its intrinsic properties. Here, utilizing the adsorption-controlled growth technique, the growth condition of initial SrO layer on TiO$$_2$$ 2 -terminated SrTiO$$_3$$ 3 (STO) (001) substrate was found to be crucial for achieving a low RR in the resulting SRO film grown afterward. The optimized initial SrO layer shows a c(2 $$\times $$ × 2) superstructure that was characterized by electron diffraction, and a series of SRO films with different thicknesses (ts) were then grown. The resulting SRO films exhibit excellent crystallinity with orthorhombic-phase down to $$t \approx $$ t ≈ 4.3 nm, which was confirmed by high resolution X-ray measurements. From X-ray azimuthal scan across SRO orthorhombic (02 ± 1) reflections, we uncover four structural domains with a dominant domain of orthorhombic SRO [001] along cubic STO [010] direction. The dominant domain population depends on t, STO miscut angle ($$\alpha $$ α ), and miscut direction ($$\beta $$ β ), giving a volume fraction of about 92 $$\%$$ % for $$t \approx $$ t ≈ 26.6 nm and $$(\alpha , \beta ) \approx $$ ( α , β ) ≈ (0.14$$^{\mathrm{o}}$$ o , 5$$^{\mathrm{o}}$$ o ). On the other hand, metallic and ferromagnetic properties were well preserved down to t$$\approx $$ ≈ 1.2 nm. Residual resistivity ratio (RRR = $$\rho ({\mathrm{300 K}})$$ ρ ( 300 K ) /$$\rho ({\mathrm{5K}})$$ ρ ( 5 K ) ) reduces from 77.1 for t$$\approx $$ ≈ 28.5 nm to 2.5 for t$$\approx $$ ≈ 1.2 nm, while $$\rho ({\mathrm{5K}})$$ ρ ( 5 K ) increases from 2.5 $$\upmu \Omega $$ μ Ω cm for t$$\approx $$ ≈ 28.5 nm to 131.0 $$\upmu \Omega $$ μ Ω cm for t$$\approx $$ ≈ 1.2 nm. The ferromagnetic onset temperature ($$T'_{\mathrm{c}}$$ T c ′ ) of around 151 K remains nearly unchanged down to t$$\approx $$ ≈ 9.0 nm and decreases to 90 K for t$$\approx $$ ≈ 1.2 nm. Our finding thus provides a practical guideline to achieve high crystallinity and low RR in ultra-thin SRO films by simply adjusting the growth of initial SrO layer.

First experimental evidence of the piezoelectric nature of struvite

In this paper, we present the first experimental evidence of the piezoelectric nature of struvite (MgNH4PO4·6H2O). Using a single diffusion gel growth technique, we have grown struvite crystals in the form of plane parallel plates. For struvite crystals of this shape, we measured the piezoelectric coefficients d33 and d32. We have found that at room temperature the value of piezoelectric coefficient d33 is 3.5 pm/V, while that of d32 is 4.7 pm/V. These values are comparable with the values for other minerals. Struvite shows stable piezoelectric properties up to the temperature slightly above 350 K, for the heating rate of 0.4 K/min. For this heating rate, and above this temperature, the thermal decomposition of struvite begins, which, consequently, leads to its transformation into dittmarite with the same non-centrosymmetric symmetry as in case of struvite. The struvite-dittmarite transformation temperature is dependent on the heating rate. The higher the heating rate, the higher the temperature of this transformation. We have also shown that dittmarite, like struvite exhibits piezoelectric properties.